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SQUID-based microwave cavity search for dark-matter axions

Physical review letters, 2010-01, Vol.104 (4), p.041301-041301, Article 041301

2010

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Controlling T c through Band Structure and Correlation Engineering in Collapsed and Uncollapsed Phases of Iron Arsenides

Physical review letters, 2020-06, Vol.124 (23), Article 237001

2020

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Effect of uniaxial strain on the structural and magnetic phase transitions in BaFe2As2

Physical review letters, 2012-02, Vol.108 (8), p.087001-087001

2012

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Experimental verification of the reversibility window concept in binary As-Se glasses subjected to a long-term physical aging

Physical review. B, Condensed matter and materials physics, 2008-07, Vol.78 (1), Article 014202

2008

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Gain-induced trapping of microcavity exciton polariton condensates

Physical review letters, 2010-03, Vol.104 (12), p.126403-126403, Article 126403

2010

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Predicted band structures of III-V semiconductors in the wurtzite phase

Physical review. B, Condensed matter and materials physics, 2010-04, Vol.81 (15), Article 155210

2010

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Electronic Structure of CeFeAsO1-xFx (x=0, 0.11 and 0.12)

Physical review. B, Condensed matter and materials physics, 2010-07, Vol.82 (1)

2010

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Mn incorporation into the GaAs lattice investigated by hard x-ray photoelectron spectroscopy and diffraction

Physical review. B, Condensed matter and materials physics, 2011-06, Vol.83 (23), Article 235327

2011

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Observation of photon-assisted tunneling through a quantum dot

Physical review letters, 1994-12, Vol.73 (25), p.3443-3446

1994

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Stable and unstable growth in molecular beam epitaxy

Physical review letters, 1994-01, Vol.72 (1), p.116-119

1994

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GaAsSb-capped InAs quantum dots: From enlarged quantum dot height to alloy fluctuations

Physical review. B, Condensed matter and materials physics, 2010-04, Vol.81 (16), Article 165305

2010

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Doping dependence of upper critical field and hall resistivity in LaFeAsO1-xFx (x=0, 0.025, 0.5, 0.07, 0.11 and 0.14)

Physical review letters, 2008-01

2008

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Demonstration of molecular beam epitaxy and a semiconducting band structure for I-Mn-V compounds

Physical review. B, Condensed matter and materials physics, 2011-01, Vol.83 (3), Article 035321

2011

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Magnetism, structure and superconductivity in CaFe2As2

Physical review letters, 2008-01

2008

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Photon-number-resolving detector with 10 bits of resolution

Physical review. A, Atomic, molecular, and optical physics, 2007-06, Vol.75 (6), Article 062325

2007

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Effect of strain on surface morphology in highly strained InGaAs films

Physical review letters, 1991-06, Vol.66 (23), p.3032-3035

1991

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Theory of semiconductor superlattice electronic structure

Reviews of modern physics, 1990-01, Vol.62 (1), p.173-234

1990

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Scanning tunneling microscopy studies of Si donors (SiGa) in GaAs

Physical review letters, 1994-03, Vol.72 (10), p.1490-1493

1994

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Interface segregation and clustering in strained-layer InGaAs/GaAs heterostructures studied by cross-sectional scanning tunneling microscopy

Physical review letters, 1994-04, Vol.72 (15), p.2414-2417

1994

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Energetics of GaAs(100)-(2×4) and -(4×2) reconstructions

Physical review letters, 1993-10, Vol.71 (14), p.2276-2279

1993

Volltextzugriff (PDF)

Optical precursors with tunneling-induced transparency in asymmetric quantum wells

Physical review. A, Atomic, molecular, and optical physics, 2011-01, Vol.83 (1), Article 013812

2011

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Conductance modulation in double quantum wells due to magnetic field-induced anticrossing

Physical review letters, 1994-10, Vol.73 (16), p.2256-2259

1994

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Detection of stacking faults breaking the [110]/[1 1 ¯ 0] symmetry in ferromagnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P)

Physical review. B, Condensed matter and materials physics, 2011-06, Vol.83 (23), Article 235324

2011

Volltextzugriff (PDF)

Muonium states in semiconductors

Reviews of modern physics, 1988, Vol.60 (1), p.69-159

PATTERSON, B. D

1988

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Possible pitfalls in theoretical determination of ground-state crystal structures: The case of platinum nitride

Physical review. B, Condensed matter and materials physics, 2009-03, Vol.79 (9), Article 092102

2009

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SQUID-based microwave cavity search for dark-matter axions

Controlling T c through Band Structure and Correlation Engineering in Collapsed and Uncollapsed Phases of Iron Arsenides

Effect of uniaxial strain on the structural and magnetic phase transitions in BaFe2As2

Experimental verification of the reversibility window concept in binary As-Se glasses subjected to a long-term physical aging

Gain-induced trapping of microcavity exciton polariton condensates

Predicted band structures of III-V semiconductors in the wurtzite phase

Electronic Structure of CeFeAsO1-xFx (x=0, 0.11 and 0.12)

Mn incorporation into the GaAs lattice investigated by hard x-ray photoelectron spectroscopy and diffraction

Observation of photon-assisted tunneling through a quantum dot

Stable and unstable growth in molecular beam epitaxy

GaAsSb-capped InAs quantum dots: From enlarged quantum dot height to alloy fluctuations

Doping dependence of upper critical field and hall resistivity in LaFeAsO1-xFx (x=0, 0.025, 0.5, 0.07, 0.11 and 0.14)

Demonstration of molecular beam epitaxy and a semiconducting band structure for I-Mn-V compounds

Magnetism, structure and superconductivity in CaFe2As2

Photon-number-resolving detector with 10 bits of resolution

Effect of strain on surface morphology in highly strained InGaAs films

Theory of semiconductor superlattice electronic structure

Scanning tunneling microscopy studies of Si donors (SiGa) in GaAs

Interface segregation and clustering in strained-layer InGaAs/GaAs heterostructures studied by cross-sectional scanning tunneling microscopy

Energetics of GaAs(100)-(2×4) and -(4×2) reconstructions

Optical precursors with tunneling-induced transparency in asymmetric quantum wells

Conductance modulation in double quantum wells due to magnetic field-induced anticrossing

Detection of stacking faults breaking the [110]/[1 1 ¯ 0] symmetry in ferromagnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P)

Muonium states in semiconductors

Possible pitfalls in theoretical determination of ground-state crystal structures: The case of platinum nitride

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