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Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy

physica status solidi (b), 2021-11, Vol.258 (11), p.n/a

2021

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Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.444-452

2019

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Optical Quality and Stimulated Emission of Molecular Beam Epitaxy Grown AlGaN in the Deep Ultraviolet

physica status solidi (b), 2020-12, Vol.257 (12), p.n/a

2020

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0.57% EQE and 4.2 mW Power of 232 nm AlGaN Far-DVC LED with Modulation Mg doped p-interlayer and Polarization Doped Transparent p-Contact Layer

2022 28th International Semiconductor Laser Conference (ISLC), 2022, p.1-2

2022

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Zero reverse recovery in SiC and GaN Schottky diodes: A comparison

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.71-74

2016

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A Dielectric-Modulated Normally-Off AlGaN/GaN MOSHEMT for Bio-Sensing Application: Analytical Modeling Study and Sensitivity Analysis

Journal of the Korean Physical Society, 2019, 74(4), , pp.349-357

2019

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AlGaN-based UV-B laser diode fabricated on AlN with 1 μm periodic concave and convex patterns

2021 27th International Semiconductor Laser Conference (ISLC), 2021, p.1-2

2021

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IEEE_Xplore

AlGaN as an electron transport layer for wide-bandgap perovskite solar cells

Japanese Journal of Applied Physics, 2023-08, Vol.62 (SK), p.SK1013

2023

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Progress on pure AlGaN based UVB LEDs and Our Approach Toward Deep-Ultraviolet (DUV) LDs

2021 27th International Semiconductor Laser Conference (ISLC), 2021, p.1-2

2021

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IEEE_Xplore

Stable Operation of AlGaN/GaN HEMTs for 25 h at 400°C in air

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.931-935

2019

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Correction to "Stable Operation of AlGaN/GaN HEMTs for 25 Hours at 400°C in Air"

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.716-716

2020

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High fmax × LG Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.481-484

2020

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Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications

Micromachines (Basel), 2024-01, Vol.15 (1), p.81

2024

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High Figure-of-Merit ( }^} / } ) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier

IEEE journal of the Electron Devices Society, 2018, Vol.6, p.1179-1186

2018

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Through recessed and regrowth gate technology for realizing process stability of GaN-GITs

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.23-26

2016

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IEEE_Xplore

AlGaN/GaN power device technology for high current (100+ A) and high voltage (1.2 kV)

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.455-458

2016

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IEEE_Xplore

The emergence and prospects of deep-ultraviolet light-emitting diode technologies

Nature photonics, 2019-04, Vol.13 (4), p.233-244

2019

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Publisher's Note: “A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells” [Appl. Phys. Lett. 120, 171103 (2022)]

Applied physics letters, 2022-05, Vol.120 (19)

2022

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GaN-based power devices: Physics, reliability, and perspectives

Journal of applied physics, 2021-11, Vol.130 (18)

2021

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Self-Heating in a GaN-Based Heterojunction Field-Effect Transistor Investigated by Ultraviolet and Visible Micro-Raman Spectroscopy

2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015, p.1-4

2015

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IEEE_Xplore

150 mW deep-ultraviolet light-emitting diodes with large-area AlN nanophotonic light-extraction structure emitting at 265 nm

Applied physics letters, 2017-04, Vol.110 (14)

2017

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Synthesis and Applications of III–V Nanowires

Chemical reviews, 2019-08, Vol.119 (15), p.9170-9220

2019

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Reverse-biased induced mechanical stress in AlGaN/GaN power diodes

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.103-106

2016

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IEEE_Xplore

High-voltage polarization-induced vertical heterostructure p-n junction diodes on bulk GaN substrates

2015 73rd Annual Device Research Conference (DRC), 2015, p.31-32

2015

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IEEE_Xplore

GaN/NbN epitaxial semiconductor/superconductor heterostructures

Nature (London), 2018-03, Vol.555 (7695), p.183-189

2018

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Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy

Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

Optical Quality and Stimulated Emission of Molecular Beam Epitaxy Grown AlGaN in the Deep Ultraviolet

0.57% EQE and 4.2 mW Power of 232 nm AlGaN Far-DVC LED with Modulation Mg doped p-interlayer and Polarization Doped Transparent p-Contact Layer

Zero reverse recovery in SiC and GaN Schottky diodes: A comparison

A Dielectric-Modulated Normally-Off AlGaN/GaN MOSHEMT for Bio-Sensing Application: Analytical Modeling Study and Sensitivity Analysis

AlGaN-based UV-B laser diode fabricated on AlN with 1 μm periodic concave and convex patterns

AlGaN as an electron transport layer for wide-bandgap perovskite solar cells

Progress on pure AlGaN based UVB LEDs and Our Approach Toward Deep-Ultraviolet (DUV) LDs

Stable Operation of AlGaN/GaN HEMTs for 25 h at 400°C in air

Correction to "Stable Operation of AlGaN/GaN HEMTs for 25 Hours at 400°C in Air"

High fmax × LG Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate

Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications

High Figure-of-Merit ( }^} / } ) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier

Through recessed and regrowth gate technology for realizing process stability of GaN-GITs

AlGaN/GaN power device technology for high current (100+ A) and high voltage (1.2 kV)

The emergence and prospects of deep-ultraviolet light-emitting diode technologies

Publisher's Note: “A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells” [Appl. Phys. Lett. 120, 171103 (2022)]

GaN-based power devices: Physics, reliability, and perspectives

Self-Heating in a GaN-Based Heterojunction Field-Effect Transistor Investigated by Ultraviolet and Visible Micro-Raman Spectroscopy

150 mW deep-ultraviolet light-emitting diodes with large-area AlN nanophotonic light-extraction structure emitting at 265 nm

Synthesis and Applications of III–V Nanowires

Reverse-biased induced mechanical stress in AlGaN/GaN power diodes

High-voltage polarization-induced vertical heterostructure p-n junction diodes on bulk GaN substrates

GaN/NbN epitaxial semiconductor/superconductor heterostructures

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