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InGaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

Journal of applied physics, 2019-03, Vol.125 (11)

2019

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InAs/GaSb-on-insulator single channel complementary metal-oxide-semiconductor transistors on Si structure

Applied physics letters, 2016-11, Vol.109 (21)

2016

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Requirements of epitaxially grown InGaAs channel layers for tunnel field-effect transistors

Journal of applied physics, 2020-06, Vol.127 (22)

2020

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Impact of interfacial InAs layers on Al2O3/GaSb metal-oxide-semiconductor interface properties

Applied physics letters, 2015-03, Vol.106 (12)

2015

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Self-aligned Ni-GaSb source/drain junctions for GaSb p-channel metal-oxide-semiconductor field-effect transistors

Applied physics letters, 2014-03, Vol.104 (9)

2014

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Ultrathin body GaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

Applied physics letters, 2015-02, Vol.106 (7)

2015

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Impact of surface orientation on (100), (111)A, and (111)B InGaAs surfaces with In content of 0.53 and 0.70 and on their Al2O3/InGaAs metal-oxide-semiconductor interface properties

Applied physics letters, 2016-10, Vol.109 (18)

2016

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Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors

Applied physics letters, 2014-07, Vol.105 (4)

2014

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Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process

Applied physics letters, 2014-06, Vol.104 (26)

2014

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Transmissive liquid-crystal device for correcting primary coma aberration and astigmatism in biospecimen in two-photon excitation laser scanning microscopy

Journal of biomedical optics, 2016-12, Vol.21 (12), p.121503-121503

2016

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Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors

Applied physics letters, 2014-06, Vol.104 (26)

2014

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Correcting spherical aberrations in a biospecimen using a transmissive liquid crystal device in two-photon excitation laser scanning microscopy

Journal of biomedical optics, 2015-10, Vol.20 (10), p.101204-101204

2015

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Low-driving-current InGaAsP photonic-wire optical switches using III-V CMOS photonics platform

Optics express, 2012-12, Vol.20 (26), p.B357-B364

2012

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Ge-rich SiGe-on-insulator for waveguide optical modulator application fabricated by Ge condensation and SiGe regrowth

Optics express, 2013-08, Vol.21 (17), p.19615-19623

2013

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Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation

Journal of applied physics, 2012-10, Vol.112 (7)

2012

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Formation of III-V-on-insulator structures on Si by direct wafer bonding

Semiconductor science and technology, 2013-09, Vol.28 (9), p.94009

2013

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Planar-type In0.53Ga0.47As channel band-to-band tunneling metal-oxide-semiconductor field-effect transistors

Journal of applied physics, 2011-12, Vol.110 (12)

2011

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Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties

Journal of applied physics, 2012-10, Vol.112 (8)

2012

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Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation

Applied physics letters, 2014-03, Vol.104 (11)

2014

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Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors

Applied physics letters, 2013-09, Vol.103 (14)

2013

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Biaxially strained extremely-thin body In0.53Ga0.47As-on-insulator metal-oxide-semiconductor field-effect transistors on Si substrate and physical understanding on their electron mobility

Journal of applied physics, 2013-10, Vol.114 (16)

2013

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Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

Applied physics letters, 2010-12, Vol.97 (25), p.253502-253502-3

2010

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Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni–InP metallic alloy

Applied physics letters, 2011-06, Vol.98 (24)

2011

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Spin-valve effect by ballistic transport in ferromagnetic metal (MnAs)/semiconductor (GaAs) hybrid heterostructures

Physical review. B, Condensed matter and materials physics, 2008-06, Vol.77 (21), Article 214435

2008

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Characterization of interface properties of Al 2 O 3 /n-GaSb and Al 2 O 3 /InAs/n-GaSb metal-oxide-semiconductor structures

Japanese Journal of Applied Physics, 2022-06, Vol.61 (6), p.61010

2022

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InGaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

InAs/GaSb-on-insulator single channel complementary metal-oxide-semiconductor transistors on Si structure

Requirements of epitaxially grown InGaAs channel layers for tunnel field-effect transistors

Impact of interfacial InAs layers on Al2O3/GaSb metal-oxide-semiconductor interface properties

Self-aligned Ni-GaSb source/drain junctions for GaSb p-channel metal-oxide-semiconductor field-effect transistors

Ultrathin body GaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

Impact of surface orientation on (100), (111)A, and (111)B InGaAs surfaces with In content of 0.53 and 0.70 and on their Al2O3/InGaAs metal-oxide-semiconductor interface properties

Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors

Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process

Transmissive liquid-crystal device for correcting primary coma aberration and astigmatism in biospecimen in two-photon excitation laser scanning microscopy

Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors

Correcting spherical aberrations in a biospecimen using a transmissive liquid crystal device in two-photon excitation laser scanning microscopy

Low-driving-current InGaAsP photonic-wire optical switches using III-V CMOS photonics platform

Ge-rich SiGe-on-insulator for waveguide optical modulator application fabricated by Ge condensation and SiGe regrowth

Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation

Formation of III-V-on-insulator structures on Si by direct wafer bonding

Planar-type In0.53Ga0.47As channel band-to-band tunneling metal-oxide-semiconductor field-effect transistors

Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties

Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation

Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors

Biaxially strained extremely-thin body In0.53Ga0.47As-on-insulator metal-oxide-semiconductor field-effect transistors on Si substrate and physical understanding on their electron mobility

Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni–InP metallic alloy

Spin-valve effect by ballistic transport in ferromagnetic metal (MnAs)/semiconductor (GaAs) hybrid heterostructures

Characterization of interface properties of Al 2 O 3 /n-GaSb and Al 2 O 3 /InAs/n-GaSb metal-oxide-semiconductor structures

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