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Comparison of the Wells score with the revised Geneva score for assessing suspected pulmonary embolism: a systematic review and meta-analysis

Journal of thrombosis and thrombolysis, 2016-04, Vol.41 (3), p.482-492

2016

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Annealing temperature influence on the degree of inhomogeneity of the Schottky barrier in Ti/4H—SiC contacts

Chinese physics B, 2014-12, Vol.23 (12), p.127302-1-127302-5

2014

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Hypotension at emergency department admission and hospital-acquired pressure ulcers in older patients: prospective study

Journal of wound care, 2019-08, Vol.28 (8), p.527-531

2019

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Effect of annealing on the characteristics of Ti/Al ohmic contacts to p-Type 4H-SiC

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Re-investigation of SiC/SiO2 interface passivation by nitrogen annealing

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Effect of jujube on the expression of CYP2E1 and TNF-alpha in the hepatic tissue of mice with alcoholic liver disease

Zhongguo Zhong xi yi jie he za zhi, 2014-04, Vol.34 (4), p.466

2014

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An Investigation of Capacitance-Voltage Hysteresis in Al2O3/SiC MIS Capacitors

Materials science forum, 2015-06, Vol.821-823, p.516-519

2015

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Charge trapping behavior and its origin in Al2O3/SiC MIS system

中国物理B：英文版, 2015-08 (8), p.523-528

刘新宇王弋宇彭朝阳李诚瞻吴佳白云汤益丹刘可安申华军

2015

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Photon higher-order squeezing effects of the q analogue of a single-mode field interacting with a Ξ-type three-level atom

Chinese physics C, 2009-08, Vol.33 (8), p.622-625

2009

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Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors

Chinese physics letters, 2015-12, Vol.32 (12), p.109-112

申华军唐亚超彭朝阳邓小川白云王弋宇李诚瞻刘可安刘新宇

2015

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Numerical and experimental study of the mesa configuration in high-voltage 4H–SiC PiN rectifiers

Chinese physics B, 2016-08, Vol.25 (8), p.317-321

邓小川陈茜茜李诚瞻申华军张金平

2016

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Compact 2x2 Multi-Mode Interference Couplers with Uneven Splitting-Ratios Based on Silicon Nanowires

Chinese physics letters, 2011-08, Vol.28 (8), p.084212-1-084212-4

2011

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Compact 2×2 Multi-Mode Interference Couplers with Uneven Splitting-Ratios Based on Silicon Nanowires

Chinese physics letters, 2011-08, Vol.28 (8), p.84212

2011

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Structural Optimization of 4H-SiC BJT for Ultraviolet Detection with High Optical Gain

Materials Science Forum, 2016-05, Vol.858, p.1036-1039

2016

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Design and simulation of 4H-SiC MESFET ultraviolet photodetector with gain

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Numerical and experimental study of the mesa configuration in high-voltage 4H-SiC PiN rectifiers Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 61234006), the Open Foundation of the State Key Laboratory of Electronic Thin Films and Integrated Devices, China (Grant No. KFJJ201301), and the National Science and Technology Major Project of the Ministry of Science and Technology, China (Grant No. 2013ZX02305-003)

Chinese physics B, 2016-06, Vol.25 (8)

2016

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Design and Optimization of AlGaN Solar-Blind Double Heterojunction Ultraviolet Phototransistor

Materials Science Forum, 2016-05, Vol.858, p.1202-1205

2016

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Investigation of the Interface Quality and Reliability of 4H-SiC MOS Structure with NO and Forming Gas Annealing Treatment

Materials Science Forum, 2016-05, Vol.858, p.647-650

2016

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Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect TransistorsSupported by the National Science and Technology Major Project of the Ministry of Science and Technology of China under Grant No 2013ZX02305

Chinese physics letters, 2015-12, Vol.32 (12)

2015

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An Investigation of Capacitance-Voltage Hysteresis in Al sub(2)O sub(3)/SiC MIS Capacitors

Materials science forum, 2015-06, Vol.821-823, p.516-519

2015

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Charge trapping behavior and its origin in Al sub(2)O sub(3)/SiC MIS system

Chinese physics B, 2015-08, Vol.24 (8), p.1-6

2015

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Charge trapping behavior and its origin in Al 2 O 3 /SiC MIS system

Chinese physics B, 2015-08, Vol.24 (8), p.87304

2015

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Charge trapping behavior and its origin in Al2O3/SiC MIS systemProject supported by the National Natural Science Foundation of China (Grant No. 61106080) and the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2013ZX02305)

Chinese physics B, 2015-06, Vol.24 (8)

2015

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Influences of high-temperature annealing on atomic layer deposited Al sub(2)O sub(3)/4H-SiC

Chinese physics B, 2013-07, Vol.22 (7), p.078102-1-078102-4

2013

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Influences of high-temperature annealing on atomic layer deposited Al 2 O 3 /4H-SiC

Chinese physics B, 2013-07, Vol.22 (7), p.78102

2013

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Comparison of the Wells score with the revised Geneva score for assessing suspected pulmonary embolism: a systematic review and meta-analysis

Annealing temperature influence on the degree of inhomogeneity of the Schottky barrier in Ti/4H—SiC contacts

Hypotension at emergency department admission and hospital-acquired pressure ulcers in older patients: prospective study

Effect of annealing on the characteristics of Ti/Al ohmic contacts to p-Type 4H-SiC

Re-investigation of SiC/SiO2 interface passivation by nitrogen annealing

Effect of jujube on the expression of CYP2E1 and TNF-alpha in the hepatic tissue of mice with alcoholic liver disease

An Investigation of Capacitance-Voltage Hysteresis in Al2O3/SiC MIS Capacitors

Charge trapping behavior and its origin in Al2O3/SiC MIS system

Photon higher-order squeezing effects of the q analogue of a single-mode field interacting with a Ξ-type three-level atom

Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors

Numerical and experimental study of the mesa configuration in high-voltage 4H–SiC PiN rectifiers

Compact 2x2 Multi-Mode Interference Couplers with Uneven Splitting-Ratios Based on Silicon Nanowires

Compact 2×2 Multi-Mode Interference Couplers with Uneven Splitting-Ratios Based on Silicon Nanowires

Structural Optimization of 4H-SiC BJT for Ultraviolet Detection with High Optical Gain

Design and simulation of 4H-SiC MESFET ultraviolet photodetector with gain

Design and Optimization of AlGaN Solar-Blind Double Heterojunction Ultraviolet Phototransistor

Investigation of the Interface Quality and Reliability of 4H-SiC MOS Structure with NO and Forming Gas Annealing Treatment

Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect TransistorsSupported by the National Science and Technology Major Project of the Ministry of Science and Technology of China under Grant No 2013ZX02305

An Investigation of Capacitance-Voltage Hysteresis in Al sub(2)O sub(3)/SiC MIS Capacitors

Charge trapping behavior and its origin in Al sub(2)O sub(3)/SiC MIS system

Charge trapping behavior and its origin in Al 2 O 3 /SiC MIS system

Charge trapping behavior and its origin in Al2O3/SiC MIS systemProject supported by the National Natural Science Foundation of China (Grant No. 61106080) and the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2013ZX02305)

Influences of high-temperature annealing on atomic layer deposited Al sub(2)O sub(3)/4H-SiC

Influences of high-temperature annealing on atomic layer deposited Al 2 O 3 /4H-SiC

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