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Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films

ACS applied materials & interfaces, 2018-01, Vol.10 (3), p.2701-2708

2018

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Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping

Journal of applied physics, 2019-01, Vol.125 (3)

2019

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La-doped Hf0.5Zr0.5O2 thin films for high-efficiency electrostatic supercapacitors

Applied physics letters, 2018-09, Vol.113 (12)

2018

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Thickness-Dependent Structural and Electrical Properties of WS2 Nanosheets Obtained via the ALD-Grown WO3 Sulfurization Technique as a Channel Material for Field-Effect Transistors

ACS omega, 2021-12, Vol.6 (50), p.34429-34437

2021

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Ferroelectric Second-Order Memristor

ACS applied materials & interfaces, 2019-09, Vol.11 (35), p.32108-32114

2019

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CMOS-compatible self-aligned 3D memristive elements for reservoir computing systems

Applied physics letters, 2023-01, Vol.122 (2)

2023

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Resistance Switching Peculiarities in Nonfilamentary Self‐Rectified TiN/Ta2O5/Ta and TiN/HfO2/Ta2O5/Ta Stacks

Physica status solidi. A, Applications and materials science, 2020-09, Vol.217 (18), p.n/a

2020

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Influence of ALD Ru bottom electrode on ferroelectric properties of Hf0.5Zr0.5O2-based capacitors

Applied physics letters, 2020-11, Vol.117 (19)

2020

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Interface engineering for enhancement of the analog properties of W/WO3− x /HfO2/Pd resistance switched structures

Journal of physics. D, Applied physics, 2021-12, Vol.54 (50)

2021

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Influence of Reducing Agent on Properties of Thin WS2 Nanosheets Prepared by Sulfurization of Atomic Layer-Deposited WO3

Journal of physical chemistry. C, 2020-12, Vol.124 (51), p.28169-28177

2020

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Radical-Enhanced Atomic Layer Deposition of a Tungsten Oxide Film with the Tunable Oxygen Vacancy Concentration

Journal of physical chemistry. C, 2020-08, Vol.124 (33), p.18156-18164

2020

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Band Alignment of Graphene/MoS2/Fluorine Tin Oxide Heterojunction for Photodetector Application

Physica status solidi. A, Applications and materials science, 2021-03, Vol.218 (6), p.n/a

2021

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Band Alignment in As‐Transferred and Annealed Graphene/MoS2 Heterostructures

Physica status solidi. PSS-RRL. Rapid research letters, 2020-02, Vol.14 (2), p.n/a

2020

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Stabilization of the Nano-Sized 1T Phase through Rhenium Doping in the Metal–Organic CVD MoS2 Films

ACS omega, 2023-05, Vol.8 (19), p.16579-16586

2023

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Stabilization of the Nano-Sized 1T Phase through Rhenium Doping in the Metal-Organic CVD MoS 2 Films

ACS omega, 2023-05, Vol.8 (19), p.16579-16586

2023

Volltextzugriff (PDF)

Thickness-Dependent Structural and Electrical Properties of WS 2 Nanosheets Obtained via the ALD-Grown WO 3 Sulfurization Technique as a Channel Material for Field-Effect Transistors

ACS omega, 2021-12, Vol.6 (50), p.34429-34437

2021

Volltextzugriff (PDF)

Atomic Layer Deposition of Ultrathin Tungsten Oxide Films from WH 2 (Cp) 2 and Ozone

Journal of physical chemistry. C, 2021-10, Vol.125 (39), p.21663-21669

2021

Volltextzugriff (PDF)

Interface engineering for enhancement of the analog properties of W/WO 3− x /HfO 2 /Pd resistance switched structures

Journal of physics. D, Applied physics, 2021-12, Vol.54 (50), p.504004

2021

Volltextzugriff (PDF)

Influence of Reducing Agent on Properties of Thin WS 2 Nanosheets Prepared by Sulfurization of Atomic Layer-Deposited WO 3

Journal of physical chemistry. C, 2020-12, Vol.124 (51), p.28169-28177

2020

Volltextzugriff (PDF)

Low-Energy He+ Ions Induced Functionalization of the MoS2 Surface for ALD HfO2 Growth Enhancement

Journal of physical chemistry. C, 2023-08, Vol.127 (34), p.17014-17020

2023

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Low-Energy He + Ions Induced Functionalization of the MoS 2 Surface for ALD HfO 2 Growth Enhancement

Journal of physical chemistry. C, 2023-08, Vol.127 (34), p.17014-17020

2023

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Resistance Switching Peculiarities in Nonfilamentary Self‐Rectified TiN/Ta 2 O 5 /Ta and TiN/HfO 2 /Ta 2 O 5 /Ta Stacks

Physica status solidi. A, Applications and materials science, 2020-09, Vol.217 (18)

2020

Volltextzugriff (PDF)

Band Alignment of Graphene/MoS 2 /Fluorine Tin Oxide Heterojunction for Photodetector Application

Physica status solidi. A, Applications and materials science, 2021-03, Vol.218 (6)

2021

Volltextzugriff (PDF)

Improved Ferroelectric Switching Endurance of La-Doped Hf 0.5 Zr 0.5 O 2 Thin Films

ACS applied materials & interfaces, 2018-01, Vol.10 (3), p.2701-2708

2018

Volltextzugriff (PDF)

Band Alignment in As‐Transferred and Annealed Graphene/MoS 2 Heterostructures

Physica status solidi. PSS-RRL. Rapid research letters, 2020-02, Vol.14 (2)

2020

Volltextzugriff (PDF)

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Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films

Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping

La-doped Hf0.5Zr0.5O2 thin films for high-efficiency electrostatic supercapacitors

Thickness-Dependent Structural and Electrical Properties of WS2 Nanosheets Obtained via the ALD-Grown WO3 Sulfurization Technique as a Channel Material for Field-Effect Transistors

Ferroelectric Second-Order Memristor

CMOS-compatible self-aligned 3D memristive elements for reservoir computing systems

Resistance Switching Peculiarities in Nonfilamentary Self‐Rectified TiN/Ta2O5/Ta and TiN/HfO2/Ta2O5/Ta Stacks

Influence of ALD Ru bottom electrode on ferroelectric properties of Hf0.5Zr0.5O2-based capacitors

Interface engineering for enhancement of the analog properties of W/WO3− x /HfO2/Pd resistance switched structures

Influence of Reducing Agent on Properties of Thin WS2 Nanosheets Prepared by Sulfurization of Atomic Layer-Deposited WO3

Radical-Enhanced Atomic Layer Deposition of a Tungsten Oxide Film with the Tunable Oxygen Vacancy Concentration

Band Alignment of Graphene/MoS2/Fluorine Tin Oxide Heterojunction for Photodetector Application

Band Alignment in As‐Transferred and Annealed Graphene/MoS2 Heterostructures

Stabilization of the Nano-Sized 1T Phase through Rhenium Doping in the Metal–Organic CVD MoS2 Films

Stabilization of the Nano-Sized 1T Phase through Rhenium Doping in the Metal-Organic CVD MoS 2 Films

Thickness-Dependent Structural and Electrical Properties of WS 2 Nanosheets Obtained via the ALD-Grown WO 3 Sulfurization Technique as a Channel Material for Field-Effect Transistors

Atomic Layer Deposition of Ultrathin Tungsten Oxide Films from WH 2 (Cp) 2 and Ozone

Interface engineering for enhancement of the analog properties of W/WO 3− x /HfO 2 /Pd resistance switched structures

Influence of Reducing Agent on Properties of Thin WS 2 Nanosheets Prepared by Sulfurization of Atomic Layer-Deposited WO 3

Low-Energy He+ Ions Induced Functionalization of the MoS2 Surface for ALD HfO2 Growth Enhancement

Low-Energy He + Ions Induced Functionalization of the MoS 2 Surface for ALD HfO 2 Growth Enhancement

Resistance Switching Peculiarities in Nonfilamentary Self‐Rectified TiN/Ta 2 O 5 /Ta and TiN/HfO 2 /Ta 2 O 5 /Ta Stacks

Band Alignment of Graphene/MoS 2 /Fluorine Tin Oxide Heterojunction for Photodetector Application

Improved Ferroelectric Switching Endurance of La-Doped Hf 0.5 Zr 0.5 O 2 Thin Films

Band Alignment in As‐Transferred and Annealed Graphene/MoS 2 Heterostructures

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