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Wide-range and area-selective threshold voltage tunability in ultrathin indium oxide transistors

Nature communications, 2023-08, Vol.14 (1), p.5243-5243, Article 5243

2023

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What Japanese semiconductor enterprises can learn from the asset-light business model for sustainable competitive advantage

Asian business & management, 2012-12, Vol.11 (5), p.615-649

2012

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Hydrogen Sensing Characteristics of a Pd/AlGaN/GaN Schottky Diode

Applied physics express, 2008-04, Vol.1, p.41102

2008

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AlGaAs/InGaAs/GaAs Transistor-Based Hydrogen Sensing Device Grown by Metal Organic Chemical Vapor Deposition

Japanese Journal of Applied Physics, 2006-02, Vol.45 (2R), p.680

2006

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Hydrogen sensing properties of a Pt-oxide-GaN Schottky diode

Journal of applied physics, 2008-07, Vol.104 (2), p.024515-024515-6

2008

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On the Emitter Ledge Length Effect for InGaP/GaAs Heterojunction Bipolar Transistors

Japanese Journal of Applied Physics, 2007-01, Vol.46 (1L), p.L74

2007

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ElastOscillation: 3D Multilevel Force Feedback for Damped Oscillation on VR Controllers

Proceedings of the 2020 CHI Conference on Human Factors in Computing Systems, 2020, p.1-12

2020

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FingerPuppet: Finger-Walking Performance-based Puppetry for Human Avatar

Extended Abstracts of the CHI Conference on Human Factors in Computing Systems, 2024, p.1-6

2024

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TacNote: Tactile and Audio Note-Taking for Non-Visual Access

Proceedings of the 36th Annual ACM Symposium on User Interface Software and Technology, 2023, p.1-14

2023

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Comprehensive analysis of hydrogen sensing properties of a Pd-gate metal-semiconductor high electron mobility transistor

Applied physics letters, 2007-06, Vol.90 (25), p.253503-253503-3

2007

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Temperature effect on impact ionization characteristics in metamorphic high electron mobility transistors

Applied physics letters, 2006-12, Vol.89 (26), p.263503-263503-3

2006

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Temperature-dependent characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector

Journal of applied physics, 2008-06, Vol.103 (11), p.114506-114506-5

2008

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Effect of Nonannealed Ohmic-Recess Structure on Temperature-Dependent Characteristics of Metamorphic High-Electron-Mobility Transistors

Journal of the Electrochemical Society, 2008, Vol.155 (6), p.H443

2008

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Hydrogen-Induced Effect on Device Performance of a Pd/GaAs-Based Heterostructure Field-Effect Transistor

Journal of the Electrochemical Society, 2008, Vol.155 (4), p.H243

2008

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Puppeteer: Exploring Intuitive Hand Gestures and Upper-Body Postures for Manipulating Human Avatar Actions

Proceedings of the 28th ACM Symposium on Virtual Reality Software and Technology, 2022, p.1-11

2022

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Improved Temperature-Dependent Characteristics of a Sulfur-Passivated AlGaAs∕InGaAs∕GaAs Pseudomorphic High-Electron-Mobility Transistor

Journal of the Electrochemical Society, 2006, Vol.153 (7), p.G632

2006

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A Study of Composite-Passivation of an InGaP∕GaAs Heterojunction Bipolar Transistor

Journal of the Electrochemical Society, 2006, Vol.153 (11), p.G938

2006

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Puppeteer: Manipulating Human Avatar Actions with Intuitive Hand Gestures and Upper-Body Postures

Adjunct Proceedings of the 35th Annual ACM Symposium on User Interface Software and Technology, 2022, p.1-3

2022

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Characteristics of an InP∕InGaAs Double Heterojunction Bipolar Transistor with an InAlGaAs∕InP Composite Collector Structure

Journal of the Electrochemical Society, 2008, Vol.155 (2), p.H136

2008

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Effect of Formal Passivations on Temperature-Dependent Characteristics of High Electron Mobility Transistors

Journal of the Electrochemical Society, 2007, Vol.154 (3), p.H134

2007

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Influence of Emitter-Edge-Thinning Thickness on the Heterojunction Bipolar Transistor Performance

Journal of the Electrochemical Society, 2007, Vol.154 (4), p.H289

2007

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On the temperature-dependent characteristics of metamorphic heterostructure field-effect transistors with different Schottky gate metals

Semiconductor science and technology, 2007-05, Vol.22 (5), p.475-480

2007

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Exploring an InGaN Micro-LED structure for optimum IQE operating on low current condition through simulation study

International journal of modern physics. B, Condensed matter physics, statistical physics, applied physics, 2024-05

2024

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On the Hydrogen Sensing Behaviors of an InAlAs-Based Schottky Diode with a Thin Pt Catalytic Metal

Japanese Journal of Applied Physics, 2008-04, Vol.47 (4S), p.2862

2008

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A hydrogen sensor based on InAlAs material with Pt catalytic thin film

Physica scripta, 2007-12, Vol.2007, p.345-348

2007

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Wide-range and area-selective threshold voltage tunability in ultrathin indium oxide transistors

What Japanese semiconductor enterprises can learn from the asset-light business model for sustainable competitive advantage

Hydrogen Sensing Characteristics of a Pd/AlGaN/GaN Schottky Diode

AlGaAs/InGaAs/GaAs Transistor-Based Hydrogen Sensing Device Grown by Metal Organic Chemical Vapor Deposition

Hydrogen sensing properties of a Pt-oxide-GaN Schottky diode

On the Emitter Ledge Length Effect for InGaP/GaAs Heterojunction Bipolar Transistors

ElastOscillation: 3D Multilevel Force Feedback for Damped Oscillation on VR Controllers

FingerPuppet: Finger-Walking Performance-based Puppetry for Human Avatar

TacNote: Tactile and Audio Note-Taking for Non-Visual Access

Comprehensive analysis of hydrogen sensing properties of a Pd-gate metal-semiconductor high electron mobility transistor

Temperature effect on impact ionization characteristics in metamorphic high electron mobility transistors

Temperature-dependent characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector

Effect of Nonannealed Ohmic-Recess Structure on Temperature-Dependent Characteristics of Metamorphic High-Electron-Mobility Transistors

Hydrogen-Induced Effect on Device Performance of a Pd/GaAs-Based Heterostructure Field-Effect Transistor

Puppeteer: Exploring Intuitive Hand Gestures and Upper-Body Postures for Manipulating Human Avatar Actions

Improved Temperature-Dependent Characteristics of a Sulfur-Passivated AlGaAs∕InGaAs∕GaAs Pseudomorphic High-Electron-Mobility Transistor

A Study of Composite-Passivation of an InGaP∕GaAs Heterojunction Bipolar Transistor

Puppeteer: Manipulating Human Avatar Actions with Intuitive Hand Gestures and Upper-Body Postures

Characteristics of an InP∕InGaAs Double Heterojunction Bipolar Transistor with an InAlGaAs∕InP Composite Collector Structure

Effect of Formal Passivations on Temperature-Dependent Characteristics of High Electron Mobility Transistors

Influence of Emitter-Edge-Thinning Thickness on the Heterojunction Bipolar Transistor Performance

On the temperature-dependent characteristics of metamorphic heterostructure field-effect transistors with different Schottky gate metals

Exploring an InGaN Micro-LED structure for optimum IQE operating on low current condition through simulation study

On the Hydrogen Sensing Behaviors of an InAlAs-Based Schottky Diode with a Thin Pt Catalytic Metal

A hydrogen sensor based on InAlAs material with Pt catalytic thin film

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