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Nature of native oxide on GaN surface and its reaction with Al

Applied physics letters, 1996-11, Vol.69 (21), p.3212-3214

1996

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Influence of Al ∕ N flux ratio during nucleation layer growth on the structural properties of AlN grown on sapphire by molecular beam epitaxy

Applied physics letters, 2005-10, Vol.87 (16), p.161901-161901-3

2005

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Effect of AlN nucleation layer on the structural properties of bulk GaN grown on sapphire by molecular-beam epitaxy

Journal of applied physics, 2005-07, Vol.98 (1), p.016109-016109-3

2005

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Intersubband absorption at 1.5-3.5 µm in GaN/AlN multiple quantum wells grown by molecular beam epitaxy on sapphire

Physica status solidi, 2007, Vol.244 (8), p.2892

2007

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Cracks in GaN/AlN multiple quantum well structures grown by MBE

17th Int. Vacuum Congress and 13th Int. Conf. on Surface Science, Stockholm, Sweden, 2008-03, Vol.100 (4), p.042026

2008

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Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission

Physical review. B, Condensed matter, 1995-09, Vol.52 (12), p.R8643-R8645

1995

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Molecular Beam Epitaxy Growth and Characterisation of GaAs1-xNxLayers

Materials science forum, 1998-02, Vol.264-268, p.1185-1188

1998

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Surface Morphology and Structure of GaN x As 1−x

MRS Internet journal of nitride semiconductor research, 1997, Vol.2, Article e8

1997

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Influence of Al Doping on Deep Levels in MBE GaAs

Materials science forum, 1995-01, Vol.196-201, p.1767-1772

1995

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Interfacial Microstructure of InxGa1-xAs/GaAs Strained Layers

Materials science forum, 1995-01, Vol.189-190, p.285-290

1995

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Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio

MRS Internet journal of nitride semiconductor research, 1998, Vol.3, Article e14

1998

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On the carrier lifetime in periodically delta -doped GaAs

Semiconductor science and technology, 1994-12, Vol.9 (12), p.2190-2194

1994

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Transport Properties of Silicon δ-Doped Gaas in High Electron Density Regime

Acta physica Polonica, A, 1997-10, Vol.92 (4), p.727-732

1997

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Influence of the Cap Layer Thickness on the Interface Quality in In0.2Ga0.8As/GaAs Single Quantum Wells

Control of Semiconductor Interfaces, 1994, p.501-505

1994

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Optical Properties of GaNAs Grown by MBE

MRS Internet journal of nitride semiconductor research, 1998, Vol.3, Article e29

1998

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Tunnelling resonances in a single-barrier heterostructure

Uspehi fiziceskih nauk, 1996, Vol.166 (8), p.900

1996

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The initial growth of Au on GaAs(001)-c(4×4)

Surface science letters, 1981-09, Vol.110 (1), p.L583-L586

1981

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Temperature dependence of electron loss spectra from MBE-grown GaAs(001)

Surface science letters, 1981-09, Vol.110 (1), p.L578-L582

1981

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Surface morphology and compositional variations in molecular beam epitaxy grown GaN xAs 1−x alloys

Nanostructured materials, 1999, Vol.12 (1), p.425-428

1999

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Band bending on MBE Al-GaAs(001) as studied by ARUPS

Surface science letters, 1983, Vol.124 (2), p.L31-L34

1983

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Temperature and reconstruction dependence of the initial Al growth on GaAs(001)

Surface science letters, 1982-10, Vol.122 (1), p.A402-A402

1982

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Evolution and Global Transmission of a Multidrug-Resistant, Community-Associated Methicillin-Resistant Staphylococcus aureus Lineage from the Indian Subcontinent

mBio, 2019-11, Vol.10 (6)

2019

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7,7-Dimethylaporphine and Other Alkaloids from the Bark of Guatteria friesiana

Journal of natural products (Washington, D.C.), 2016-06, Vol.79 (6), p.1524-1531

2016

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Summary Abstract: Crystallographic structure of coevaporated Ni–Al alloy films

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1983-04, Vol.1 (2), p.367-369

1983

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Microhardness and electrical resistivity of Au/TiC multilayer structures prepared by RF sputtering

Journal of physics. D, Applied physics, 1979-09, Vol.12 (9), p.1597-1600

1979

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Nature of native oxide on GaN surface and its reaction with Al

Influence of Al ∕ N flux ratio during nucleation layer growth on the structural properties of AlN grown on sapphire by molecular beam epitaxy

Effect of AlN nucleation layer on the structural properties of bulk GaN grown on sapphire by molecular-beam epitaxy

Intersubband absorption at 1.5-3.5 µm in GaN/AlN multiple quantum wells grown by molecular beam epitaxy on sapphire

Cracks in GaN/AlN multiple quantum well structures grown by MBE

Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission

Molecular Beam Epitaxy Growth and Characterisation of GaAs1-xNxLayers

Surface Morphology and Structure of GaN x As 1−x

Influence of Al Doping on Deep Levels in MBE GaAs

Interfacial Microstructure of InxGa1-xAs/GaAs Strained Layers

Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio

On the carrier lifetime in periodically delta -doped GaAs

Transport Properties of Silicon δ-Doped Gaas in High Electron Density Regime

Influence of the Cap Layer Thickness on the Interface Quality in In0.2Ga0.8As/GaAs Single Quantum Wells

Optical Properties of GaNAs Grown by MBE

Tunnelling resonances in a single-barrier heterostructure

The initial growth of Au on GaAs(001)-c(4×4)

Temperature dependence of electron loss spectra from MBE-grown GaAs(001)

Surface morphology and compositional variations in molecular beam epitaxy grown GaN xAs 1−x alloys

Band bending on MBE Al-GaAs(001) as studied by ARUPS

Temperature and reconstruction dependence of the initial Al growth on GaAs(001)

Evolution and Global Transmission of a Multidrug-Resistant, Community-Associated Methicillin-Resistant Staphylococcus aureus Lineage from the Indian Subcontinent

7,7-Dimethylaporphine and Other Alkaloids from the Bark of Guatteria friesiana

Summary Abstract: Crystallographic structure of coevaporated Ni–Al alloy films

Microhardness and electrical resistivity of Au/TiC multilayer structures prepared by RF sputtering

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