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GaN power devices: current status and future challenges

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SC0804

Ueda, Tetsuzo

2019

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GaN transistors on Si for switching and high-frequency applications

Japanese Journal of Applied Physics, 2014-10, Vol.53 (10), p.100214-1-100214-8

2014

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Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

Journal of applied physics, 2017-01, Vol.121 (3)

2017

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Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor

Applied physics letters, 2015-10, Vol.107 (16)

2015

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Design and control of interface reaction between Al-based dielectrics and AlGaN layer in AlGaN/GaN metal-oxide-semiconductor structures

Applied physics letters, 2017-07, Vol.111 (4)

2017

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Effects of Deep Trapping States at High Temperatures on Transient Performance of AlGaN/GaN Heterostructure Field-Effect Transistors

Japanese Journal of Applied Physics, 2013-04, Vol.52 (4), p.04CF07-04CF07-5

2013

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Recent advances in GaN transistors for future emerging applications

Physica status solidi. A, Applications and materials science, 2009-06, Vol.206 (6), p.1221-1227

2009

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Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2015, p.41-44

2015

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Nonpolar (11-20) plane AlGaN∕GaN heterojunction field effect transistors on (1-102) plane sapphire

Journal of applied physics, 2007-11, Vol.102 (9)

2007

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Effects of hole traps on the temperature dependence of current collapse in a normally-OFF gate-injection transistor

Japanese Journal of Applied Physics, 2016-05, Vol.55 (5), p.54101

2016

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Separation of Thin GaN from Sapphire by Laser Lift-Off Technique

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4), p.041001-041001-6

2011

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Drain current enhancement induced by hole injection from gate of 600-V-class normally off gate injection transistor under high temperature conditions up to 200 °C

Japanese Journal of Applied Physics, 2018-06, Vol.57 (6S3), p.6

2018

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Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties

Japanese Journal of Applied Physics, 2018-06, Vol.57 (6S3), p.6

2018

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Effects of post-deposition annealing in O2 on threshold voltage of Al2O3/AlGaN/GaN MOS heterojunction field-effect transistors

Japanese Journal of Applied Physics, 2019-03, Vol.58 (3), p.030902

2019

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99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors

2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC), 2011, p.481-484

2011

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SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

Japanese Journal of Applied Physics, 2018-06, Vol.57 (6S3)

2018

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Synchrotron radiation X-ray photoelectron spectroscopy of Ti/Al ohmic contacts to n-type GaN: Key role of Al capping layers in interface scavenging reactions

Applied physics express, 2016-10, Vol.9 (10), p.105801

2016

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Reliability issues in GaN and SiC power devices

2014 IEEE International Reliability Physics Symposium, 2014, p.3D.4.1-3D.4.6

Ueda, Tetsuzo

2014

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Crystalline SiN x Ultrathin Films Grown on AlGaN/GaN Using In Situ Metalorganic Chemical Vapor Deposition

Journal of electronic materials, 2008-05, Vol.37 (5), p.628-634

2008

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Effects of Growth Temperatures on Crystal Quality of GaN by Vapor Phase Epitaxy Using GaCl3 and NH3

Jpn J Appl Phys, 2011-08, Vol.50 (8), p.085501-085501-5

2011

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GaN TRANSISTORS FOR POWER SWITCHING AND MILLIMETER-WAVE APPLICATIONS

International journal of high speed electronics, 2009-03, Vol.19 (1), p.145-152

2009

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High-Extraction-Efficiency Blue Light-Emitting Diode Using Extended-Pitch Photonic Crystal

Japanese Journal of Applied Physics, 2004-08, Vol.43 (8S), p.5809

2004

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Separation of Thin GaN from Sapphire by Laser Lift-Off Technique

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4R), p.41001

2011

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Development of GaN-Based Gate-Injection Transistors and its Power Switching Application

Materials Science Forum, 2016-05, Vol.858, p.1165-1169

2016

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Polarization engineering in GaN power transistors

Physica status solidi. B. Basic research, 2010-07, Vol.247 (7), p.1735-1739

2010

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GaN power devices: current status and future challenges

GaN transistors on Si for switching and high-frequency applications

Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor

Design and control of interface reaction between Al-based dielectrics and AlGaN layer in AlGaN/GaN metal-oxide-semiconductor structures

Effects of Deep Trapping States at High Temperatures on Transient Performance of AlGaN/GaN Heterostructure Field-Effect Transistors

Recent advances in GaN transistors for future emerging applications

Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain

Nonpolar (11-20) plane AlGaN∕GaN heterojunction field effect transistors on (1-102) plane sapphire

Effects of hole traps on the temperature dependence of current collapse in a normally-OFF gate-injection transistor

Separation of Thin GaN from Sapphire by Laser Lift-Off Technique

Drain current enhancement induced by hole injection from gate of 600-V-class normally off gate injection transistor under high temperature conditions up to 200 °C

Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties

Effects of post-deposition annealing in O2 on threshold voltage of Al2O3/AlGaN/GaN MOS heterojunction field-effect transistors

99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors

SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

Synchrotron radiation X-ray photoelectron spectroscopy of Ti/Al ohmic contacts to n-type GaN: Key role of Al capping layers in interface scavenging reactions

Reliability issues in GaN and SiC power devices

Crystalline SiN x Ultrathin Films Grown on AlGaN/GaN Using In Situ Metalorganic Chemical Vapor Deposition

Effects of Growth Temperatures on Crystal Quality of GaN by Vapor Phase Epitaxy Using GaCl3 and NH3

GaN TRANSISTORS FOR POWER SWITCHING AND MILLIMETER-WAVE APPLICATIONS

High-Extraction-Efficiency Blue Light-Emitting Diode Using Extended-Pitch Photonic Crystal

Separation of Thin GaN from Sapphire by Laser Lift-Off Technique

Development of GaN-Based Gate-Injection Transistors and its Power Switching Application

Polarization engineering in GaN power transistors

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