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Technology and Education: Computers, Software, and the Internet

Handbook of the Economics of Education, 2016

2016

Volltextzugriff (PDF)

Foreword to the 23rd International WAAVP Conference

Veterinary parasitology, 2011-08, Vol.180 (1-2), p.1-1

Bulman, G. Mauricio

2011

Volltextzugriff (PDF)

Highly anisotropic photoenhanced wet etching of n-type GaN

Applied physics letters, 1997-10, Vol.71 (15), p.2151-2153

1997

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Garnet growth during crustal thickening in the Cascades Crystalline Core, Washington, USA

Journal of metamorphic geology, 2011-08, Vol.29 (6), p.627-647

2011

Volltextzugriff (PDF)

Smooth n-type GaN surfaces by photoenhanced wet etching

Applied physics letters, 1998-02, Vol.72 (5), p.560-562

1998

Volltextzugriff (PDF)

Dopant-selective photoenhanced wet etching of GaN

Journal of electronic materials, 1998-04, Vol.27 (4), p.282-287

1998

Volltextzugriff (PDF)

MC1732: Pilot/Phase II Trial of Hypofractionated Radiotherapy to the Whole Breast Alone Before Breast Conserving Surgery

International journal of radiation oncology, biology, physics, 2021-11, Vol.111 (3), p.S109-S109

2021

Volltextzugriff (PDF)

MC1635: Randomized Phase III Trial of Hypofractionated Radiotherapy to the Whole Breast After Breast Conserving Surgery

International journal of radiation oncology, biology, physics, 2021-11, Vol.111 (3), p.S6-S7

2021

Volltextzugriff (PDF)

Role of localized and extended electronic states in InGaN/GaN quantum wells under high injection, inferred from near-field optical microscopy

Applied physics letters, 1998-07, Vol.73 (4), p.493-495

1998

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Large external ΔT and cooling power densities in thin-film Bi2Te3-superlattice thermoelectric cooling devices

Applied physics letters, 2006-09, Vol.89 (12)

2006

Volltextzugriff (PDF)

Gain characteristics of InGaN/GaN quantum well diode lasers

Applied physics letters, 1998-03, Vol.72 (12), p.1418-1420

1998

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Mechanism of efficient ultraviolet lasing in GaN/AlGaN separate-confinement heterostructures

Applied physics letters, 1999-12, Vol.75 (25), p.3905-3907

1999

Volltextzugriff (PDF)

Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates

Applied physics letters, 1996-08, Vol.69 (6), p.740-742

1996

Volltextzugriff (PDF)

Garnet growth during crustal thickening in the Cascades Crystalline Core, Washington, USA: GARNET GROWTH IN CASCADES CRYSTALLINE CORE

Journal of metamorphic geology, 2011-08, Vol.29 (6), p.627-647

2011

Volltextzugriff (PDF)

Comparative efficacy of moxidectin 2% equine oral gel and ivermectin 2% equine oral paste against Onchocerca cervicalis (Railliet and Henry, 1910) microfilariae in horses with naturally acquired infections in Formosa (Argentina)

Veterinary parasitology, 1997-12, Vol.73 (3-4), p.243-248

1997

Volltextzugriff (PDF)

Identification of Microthoracius mazzai (Phthiraptera: Anoplura) as an economically important parasite of alpacas

Journal of medical entomology, 1998-11, Vol.35 (6), p.922-930

1998

Volltextzugriff (PDF)

Strain determination in heteroepitaxial GaN

Applied physics letters, 1997-08, Vol.71 (6), p.829-831

1997

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Photoelectrochemical etching of GaN

MRS proceedings, 1997, Vol.468, Article 349

1997

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Dynamics of photoexcited carriers in AlxGa1−xN/GaN double heterostructures

Journal of applied physics, 1997-09, Vol.82 (6), p.3158-3160

1997

Volltextzugriff (PDF)

Large external Δ T and cooling power densities in thin-film Bi 2 Te 3 -superlattice thermoelectric cooling devices

Applied physics letters, 2006-09, Vol.89 (12), p.122117-122117-3

2006

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Growth and characterization of GaN layers on SiC substrates

Journal of crystal growth, 1996-09, Vol.166 (1-4), p.601-606

1996

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Pendeoepitaxy of GaN and InGaN LEDs on SiC

Materials science forum, 2000-05, Vol.338-342, p.1477-1482

2000

Volltextzugriff (PDF)

Optical Properties and Lasing in (In, Al)GaN Structures

Physica status solidi. A, Applied research, 2001-01, Vol.183 (1), p.105-109

2001

Volltextzugriff (PDF)

Dry and Wet Etching for Group III – Nitrides

MRS Internet journal of nitride semiconductor research, 1999, Vol.4 (S1), p.38-48

1999

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Technology and Education: Computers, Software, and the Internet

Foreword to the 23rd International WAAVP Conference

Highly anisotropic photoenhanced wet etching of n-type GaN

Garnet growth during crustal thickening in the Cascades Crystalline Core, Washington, USA

Smooth n-type GaN surfaces by photoenhanced wet etching

Dopant-selective photoenhanced wet etching of GaN

MC1732: Pilot/Phase II Trial of Hypofractionated Radiotherapy to the Whole Breast Alone Before Breast Conserving Surgery

MC1635: Randomized Phase III Trial of Hypofractionated Radiotherapy to the Whole Breast After Breast Conserving Surgery

Role of localized and extended electronic states in InGaN/GaN quantum wells under high injection, inferred from near-field optical microscopy

Large external ΔT and cooling power densities in thin-film Bi2Te3-superlattice thermoelectric cooling devices

Gain characteristics of InGaN/GaN quantum well diode lasers

Mechanism of efficient ultraviolet lasing in GaN/AlGaN separate-confinement heterostructures

Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates

Garnet growth during crustal thickening in the Cascades Crystalline Core, Washington, USA: GARNET GROWTH IN CASCADES CRYSTALLINE CORE

Comparative efficacy of moxidectin 2% equine oral gel and ivermectin 2% equine oral paste against Onchocerca cervicalis (Railliet and Henry, 1910) microfilariae in horses with naturally acquired infections in Formosa (Argentina)

Identification of Microthoracius mazzai (Phthiraptera: Anoplura) as an economically important parasite of alpacas

Strain determination in heteroepitaxial GaN

Photoelectrochemical etching of GaN

Dynamics of photoexcited carriers in AlxGa1−xN/GaN double heterostructures

Large external Δ T and cooling power densities in thin-film Bi 2 Te 3 -superlattice thermoelectric cooling devices

Growth and characterization of GaN layers on SiC substrates

Pendeoepitaxy of GaN and InGaN LEDs on SiC

Handbook of the economics of education. 5

Optical Properties and Lasing in (In, Al)GaN Structures

Dry and Wet Etching for Group III – Nitrides

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