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Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure

Semiconductors (Woodbury, N.Y.), 2017-10, Vol.51 (10), p.1364-1369

2017

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Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (13), p.1696-1703

2018

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The regularities of phase formation in Fe3Si(111)/Si(111) structure at vacuum annealing

Journal of physics. Conference series, 2017-05, Vol.857 (1)

2017

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Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films

Semiconductors (Woodbury, N.Y.), 2017-09, Vol.51 (9), p.1240-1246

2017

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Comparison of structures of gold nanoparticles synthesized by pulsed laser ablation and magnetron sputtering

Journal of structural chemistry, 2017-12, Vol.58 (8), p.1581-1587

2017

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Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots

Nanotechnology, 2009-08, Vol.20 (34), p.345702-345702

2009

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Low-dimensional effects in a three-dimensional system of Si quantum dots modified by high-energy ion irradiation

Nanotechnology, 2009-05, Vol.20 (18), p.185401

2009

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The modification of Si nanocrystallites embedded in a dielectric matrix by high energy ion irradiation

Nanotechnology, 2009-03, Vol.20 (9), p.095205

2009

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Silicon shallow doping by erbium and oxygen recoils implantation

Solid state communications, 2016-09, Vol.242, p.41-45

2016

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Raman shifts and photoluminescence of the InSb nanocrystals ion beam-synthesized in buried SiO2 layers

Journal of luminescence, 2018-12, Vol.204, p.656-662

2018

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Implantation of P ions in SiO2 layers with embedded Si nanocrystals

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2004-08, Vol.222 (3-4), p.497-504

2004

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Optical transitions in Ge nanocrystals formed by high-pressure annealing of Ge+ ion implanted SiO2 films

Solid state communications, 2004-01, Vol.129 (1), p.63-68

2004

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Infrared photoluminescence from GeSi nanocrystals embedded in a germanium–silicate matrix

Journal of experimental and theoretical physics, 2015-12, Vol.121 (6), p.1076-1081

2015

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Epitaxial silicon films deposited at high rates by gas-jet electron beam plasma CVD

Surface & coatings technology, 2003-09, Vol.174, p.1178-1181

2003

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Ion-beam synthesis of InSb nanocrystals in the buried SiO2 layer of a silicon-on-insulator structure

Semiconductors (Woodbury, N.Y.), 2014-09, Vol.48 (9), p.1196-1201

2014

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The formation of silicon nanocrystals in SiO2 layers by the implantation of Si ions with intermediate heat treatments

Semiconductors (Woodbury, N.Y.), 2005-05, Vol.39 (5), p.552-556

2005

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Femtosecond pulse crystallization of thin amorphous hydrogenated films on glass substrates using near ultraviolet laser radiation

JETP letters, 2011-07, Vol.93 (10), p.603-606

2011

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Endotaxial growth of InSb nanocrystals at the bonding interface of the In+ and Sb+ ion implanted SOI structure

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2009-05, Vol.267 (8-9), p.1360-1363

2009

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The Reason of Sign-Variable Thermoelectric Effect in Fe86Mn13C Alloy

Advanced materials research, 2014, Vol.871, p.226-230

2014

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Nanometer-thick SGOI structures produced by Ge+ ion implantation of SiO2 films and subsequent hydrogen transfer of Si layers

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2009-05, Vol.267 (8-9), p.1277-1280

2009

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Phase separation as a basis for the formation of light-emitting silicon nanoclusters in SiOx films irradiated with swift heavy ions

Optoelectronics, instrumentation, and data processing, 2014-05, Vol.50 (3), p.292-297

2014

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Influence of irradiation with swift heavy ions on multilayer Si/SiO2 heterostructures

Semiconductors (Woodbury, N.Y.), 2013-03, Vol.47 (3), p.358-364

2013

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Phase transitions in a-Si:H films on a glass irradiated by high-power femtosecond pulses: Manifestation of nonlinear and nonthermal effects

JETP letters, 2007-09, Vol.86 (2), p.119-122

2007

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Properties of Ge nanocrystals formed by implantation of Ge+ ions into SiO2 films with subsequent annealing under hydrostatic pressure

Semiconductors (Woodbury, N.Y.), 2003-04, Vol.37 (4), p.462-467

2003

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Formation of a resonant microcavity in hydrogen ion-implanted silicon-on-insulator structures

Journal of applied physics, 2007-10, Vol.102 (7), p.074312-074312-10

2007

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Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure

Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films

The regularities of phase formation in Fe3Si(111)/Si(111) structure at vacuum annealing

Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films

Comparison of structures of gold nanoparticles synthesized by pulsed laser ablation and magnetron sputtering

Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots

Low-dimensional effects in a three-dimensional system of Si quantum dots modified by high-energy ion irradiation

The modification of Si nanocrystallites embedded in a dielectric matrix by high energy ion irradiation

Silicon shallow doping by erbium and oxygen recoils implantation

Raman shifts and photoluminescence of the InSb nanocrystals ion beam-synthesized in buried SiO2 layers

Implantation of P ions in SiO2 layers with embedded Si nanocrystals

Optical transitions in Ge nanocrystals formed by high-pressure annealing of Ge+ ion implanted SiO2 films

Infrared photoluminescence from GeSi nanocrystals embedded in a germanium–silicate matrix

Epitaxial silicon films deposited at high rates by gas-jet electron beam plasma CVD

Ion-beam synthesis of InSb nanocrystals in the buried SiO2 layer of a silicon-on-insulator structure

The formation of silicon nanocrystals in SiO2 layers by the implantation of Si ions with intermediate heat treatments

Femtosecond pulse crystallization of thin amorphous hydrogenated films on glass substrates using near ultraviolet laser radiation

Endotaxial growth of InSb nanocrystals at the bonding interface of the In+ and Sb+ ion implanted SOI structure

The Reason of Sign-Variable Thermoelectric Effect in Fe86Mn13C Alloy

Nanometer-thick SGOI structures produced by Ge+ ion implantation of SiO2 films and subsequent hydrogen transfer of Si layers

Phase separation as a basis for the formation of light-emitting silicon nanoclusters in SiOx films irradiated with swift heavy ions

Influence of irradiation with swift heavy ions on multilayer Si/SiO2 heterostructures

Phase transitions in a-Si:H films on a glass irradiated by high-power femtosecond pulses: Manifestation of nonlinear and nonthermal effects

Properties of Ge nanocrystals formed by implantation of Ge+ ions into SiO2 films with subsequent annealing under hydrostatic pressure

Formation of a resonant microcavity in hydrogen ion-implanted silicon-on-insulator structures

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