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Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure

Semiconductors (Woodbury, N.Y.), 2017-10, Vol.51 (10), p.1364-1369

2017

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Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (13), p.1696-1703

2018

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The regularities of phase formation in Fe3Si(111)/Si(111) structure at vacuum annealing

Journal of physics. Conference series, 2017, Vol.857 (1)

2017

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Raman investigation of the electron-phonon interaction in n-type silicon nanocrystals

Physics of the solid state, 2008-05, Vol.50 (5), p.962-965

2008

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Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films

Semiconductors (Woodbury, N.Y.), 2017-09, Vol.51 (9), p.1240-1246

2017

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Comparison of structures of gold nanoparticles synthesized by pulsed laser ablation and magnetron sputtering

Journal of structural chemistry, 2017-12, Vol.58 (8), p.1581-1587

2017

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Silicon shallow doping by erbium and oxygen recoils implantation

Solid state communications, 2016-09, Vol.242, p.41-45

2016

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Raman shifts and photoluminescence of the InSb nanocrystals ion beam-synthesized in buried SiO2 layers

Journal of luminescence, 2018-12, Vol.204, p.656-662

2018

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The properties of the nanometer thick Si/Ge films-on-insulator produced by Ge+ ion implantation and subsequent hydrogen transfer

Physica status solidi. C, 2008-12, Vol.5 (12), p.3724-3727

2008

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Implantation of P ions in SiO2 layers with embedded Si nanocrystals

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2004-08, Vol.222 (3-4), p.497-504

2004

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Effect of the ion-energy loss rate on defect formation during implantation in silicon nanocrystals

Semiconductors (Woodbury, N.Y.), 2008, Vol.42 (9), p.1127-1131

2008

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Optical transitions in Ge nanocrystals formed by high-pressure annealing of Ge+ ion implanted SiO2 films

Solid state communications, 2004-01, Vol.129 (1), p.63-68

2004

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Infrared photoluminescence from GeSi nanocrystals embedded in a germanium–silicate matrix

Journal of experimental and theoretical physics, 2015-12, Vol.121 (6), p.1076-1081

2015

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Ion-beam synthesis of InSb nanocrystals in the buried SiO2 layer of a silicon-on-insulator structure

Semiconductors (Woodbury, N.Y.), 2014-09, Vol.48 (9), p.1196-1201

2014

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Epitaxial silicon films deposited at high rates by gas-jet electron beam plasma CVD

Surface & coatings technology, 2003-09, Vol.174, p.1178-1181

2003

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The formation of silicon nanocrystals in SiO2 layers by the implantation of Si ions with intermediate heat treatments

Semiconductors (Woodbury, N.Y.), 2005-05, Vol.39 (5), p.552-556

2005

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Femtosecond pulse crystallization of thin amorphous hydrogenated films on glass substrates using near ultraviolet laser radiation

JETP letters, 2011-07, Vol.93 (10), p.603-606

2011

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Endotaxial growth of InSb nanocrystals at the bonding interface of the In+ and Sb+ ion implanted SOI structure

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2009-05, Vol.267 (8-9), p.1360-1363

2009

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Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions

Semiconductors (Woodbury, N.Y.), 2013-05, Vol.47 (5), p.606-611

2013

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Nanometer-thick SGOI structures produced by Ge+ ion implantation of SiO2 films and subsequent hydrogen transfer of Si layers

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2009-05, Vol.267 (8-9), p.1277-1280

2009

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Phase separation as a basis for the formation of light-emitting silicon nanoclusters in SiOx films irradiated with swift heavy ions

Optoelectronics, instrumentation, and data processing, 2014-05, Vol.50 (3), p.292-297

2014

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Precipitation of boron in silicon on high-dose implantation

Semiconductors (Woodbury, N.Y.), 2010-03, Vol.44 (3), p.285-288

2010

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Influence of irradiation with swift heavy ions on multilayer Si/SiO2 heterostructures

Semiconductors (Woodbury, N.Y.), 2013-03, Vol.47 (3), p.358-364

2013

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Phase transitions in a-Si:H films on a glass irradiated by high-power femtosecond pulses: Manifestation of nonlinear and nonthermal effects

JETP letters, 2007-09, Vol.86 (2), p.119-122

2007

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Properties of Ge nanocrystals formed by implantation of Ge+ ions into SiO2 films with subsequent annealing under hydrostatic pressure

Semiconductors (Woodbury, N.Y.), 2003-04, Vol.37 (4), p.462-467

2003

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Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure

Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films

The regularities of phase formation in Fe3Si(111)/Si(111) structure at vacuum annealing

Raman investigation of the electron-phonon interaction in n-type silicon nanocrystals

Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films

Comparison of structures of gold nanoparticles synthesized by pulsed laser ablation and magnetron sputtering

Silicon shallow doping by erbium and oxygen recoils implantation

Raman shifts and photoluminescence of the InSb nanocrystals ion beam-synthesized in buried SiO2 layers

The properties of the nanometer thick Si/Ge films-on-insulator produced by Ge+ ion implantation and subsequent hydrogen transfer

Implantation of P ions in SiO2 layers with embedded Si nanocrystals

Effect of the ion-energy loss rate on defect formation during implantation in silicon nanocrystals

Optical transitions in Ge nanocrystals formed by high-pressure annealing of Ge+ ion implanted SiO2 films

Infrared photoluminescence from GeSi nanocrystals embedded in a germanium–silicate matrix

Ion-beam synthesis of InSb nanocrystals in the buried SiO2 layer of a silicon-on-insulator structure

Epitaxial silicon films deposited at high rates by gas-jet electron beam plasma CVD

The formation of silicon nanocrystals in SiO2 layers by the implantation of Si ions with intermediate heat treatments

Femtosecond pulse crystallization of thin amorphous hydrogenated films on glass substrates using near ultraviolet laser radiation

Endotaxial growth of InSb nanocrystals at the bonding interface of the In+ and Sb+ ion implanted SOI structure

Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions

Nanometer-thick SGOI structures produced by Ge+ ion implantation of SiO2 films and subsequent hydrogen transfer of Si layers

Phase separation as a basis for the formation of light-emitting silicon nanoclusters in SiOx films irradiated with swift heavy ions

Precipitation of boron in silicon on high-dose implantation

Influence of irradiation with swift heavy ions on multilayer Si/SiO2 heterostructures

Phase transitions in a-Si:H films on a glass irradiated by high-power femtosecond pulses: Manifestation of nonlinear and nonthermal effects

Properties of Ge nanocrystals formed by implantation of Ge+ ions into SiO2 films with subsequent annealing under hydrostatic pressure

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