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Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure

Semiconductors (Woodbury, N.Y.), 2017-10, Vol.51 (10), p.1364-1369

2017

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Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (13), p.1696-1703

2018

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The regularities of phase formation in Fe3Si(111)/Si(111) structure at vacuum annealing

Journal of physics. Conference series, 2017, Vol.857 (1)

2017

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Raman investigation of the electron-phonon interaction in n-type silicon nanocrystals

Physics of the solid state, 2008-05, Vol.50 (5), p.962-965

2008

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Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films

Semiconductors (Woodbury, N.Y.), 2017-09, Vol.51 (9), p.1240-1246

2017

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Ge nanocrystals formed by furnace annealing of Ge ( x ) [SiO 2 ] (1− x ) films: structure and optical properties

Materials research express, 2017-07, Vol.4 (7), p.75010

2017

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Comparison of structures of gold nanoparticles synthesized by pulsed laser ablation and magnetron sputtering

Journal of structural chemistry, 2017-12, Vol.58 (8), p.1581-1587

2017

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Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots

Nanotechnology, 2009-08, Vol.20 (34), p.345702-345702

2009

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Light-emitting Si nanostructures formed in silica layers by irradiation with swift heavy ions

Applied physics. A, Materials science & processing, 2010-03, Vol.98 (4), p.873-877

2010

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Low-dimensional effects in a three-dimensional system of Si quantum dots modified by high-energy ion irradiation

Nanotechnology, 2009-05, Vol.20 (18), p.185401

2009

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The modification of Si nanocrystallites embedded in a dielectric matrix by high energy ion irradiation

Nanotechnology, 2009-03, Vol.20 (9), p.095205

2009

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Structure and optical properties of silicon nanopowders

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-02, Vol.147 (2), p.222-225

2008

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Silicon shallow doping by erbium and oxygen recoils implantation

Solid state communications, 2016-09, Vol.242, p.41-45

2016

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Raman shifts and photoluminescence of the InSb nanocrystals ion beam-synthesized in buried SiO2 layers

Journal of luminescence, 2018-12, Vol.204, p.656-662

2018

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The properties of the nanometer thick Si/Ge films-on-insulator produced by Ge+ ion implantation and subsequent hydrogen transfer

Physica status solidi. C, 2008-12, Vol.5 (12), p.3724-3727

2008

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Implantation of P ions in SiO2 layers with embedded Si nanocrystals

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2004-08, Vol.222 (3-4), p.497-504

2004

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Effect of the ion-energy loss rate on defect formation during implantation in silicon nanocrystals

Semiconductors (Woodbury, N.Y.), 2008, Vol.42 (9), p.1127-1131

2008

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Optical transitions in Ge nanocrystals formed by high-pressure annealing of Ge+ ion implanted SiO2 films

Solid state communications, 2004-01, Vol.129 (1), p.63-68

2004

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Infrared photoluminescence from GeSi nanocrystals embedded in a germanium–silicate matrix

Journal of experimental and theoretical physics, 2015-12, Vol.121 (6), p.1076-1081

2015

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Ion-beam synthesis of InSb nanocrystals in the buried SiO2 layer of a silicon-on-insulator structure

Semiconductors (Woodbury, N.Y.), 2014-09, Vol.48 (9), p.1196-1201

2014

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Epitaxial silicon films deposited at high rates by gas-jet electron beam plasma CVD

Surface & coatings technology, 2003-09, Vol.174, p.1178-1181

2003

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Welding of dissimilar materials with interlayers employment containing copper and tantalum

Metal Working and Material Science, 2015-12 (4), p.61-71

2015

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The formation of silicon nanocrystals in SiO2 layers by the implantation of Si ions with intermediate heat treatments

Semiconductors (Woodbury, N.Y.), 2005-05, Vol.39 (5), p.552-556

2005

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Femtosecond pulse crystallization of thin amorphous hydrogenated films on glass substrates using near ultraviolet laser radiation

JETP letters, 2011-07, Vol.93 (10), p.603-606

2011

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Endotaxial growth of InSb nanocrystals at the bonding interface of the In+ and Sb+ ion implanted SOI structure

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2009-05, Vol.267 (8-9), p.1360-1363

2009

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Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure

Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films

The regularities of phase formation in Fe3Si(111)/Si(111) structure at vacuum annealing

Raman investigation of the electron-phonon interaction in n-type silicon nanocrystals

Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films

Ge nanocrystals formed by furnace annealing of Ge ( x ) [SiO 2 ] (1− x ) films: structure and optical properties

Comparison of structures of gold nanoparticles synthesized by pulsed laser ablation and magnetron sputtering

Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots

Light-emitting Si nanostructures formed in silica layers by irradiation with swift heavy ions

Low-dimensional effects in a three-dimensional system of Si quantum dots modified by high-energy ion irradiation

The modification of Si nanocrystallites embedded in a dielectric matrix by high energy ion irradiation

Structure and optical properties of silicon nanopowders

Silicon shallow doping by erbium and oxygen recoils implantation

Raman shifts and photoluminescence of the InSb nanocrystals ion beam-synthesized in buried SiO2 layers

The properties of the nanometer thick Si/Ge films-on-insulator produced by Ge+ ion implantation and subsequent hydrogen transfer

Implantation of P ions in SiO2 layers with embedded Si nanocrystals

Effect of the ion-energy loss rate on defect formation during implantation in silicon nanocrystals

Optical transitions in Ge nanocrystals formed by high-pressure annealing of Ge+ ion implanted SiO2 films

Infrared photoluminescence from GeSi nanocrystals embedded in a germanium–silicate matrix

Ion-beam synthesis of InSb nanocrystals in the buried SiO2 layer of a silicon-on-insulator structure

Epitaxial silicon films deposited at high rates by gas-jet electron beam plasma CVD

Welding of dissimilar materials with interlayers employment containing copper and tantalum

The formation of silicon nanocrystals in SiO2 layers by the implantation of Si ions with intermediate heat treatments

Femtosecond pulse crystallization of thin amorphous hydrogenated films on glass substrates using near ultraviolet laser radiation

Endotaxial growth of InSb nanocrystals at the bonding interface of the In+ and Sb+ ion implanted SOI structure

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