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The regularities of phase formation in Fe3Si(111)/Si(111) structure at vacuum annealing

Journal of physics. Conference series, 2017, Vol.857 (1)

2017

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Ge nanocrystals formed by furnace annealing of Ge ( x ) [SiO 2 ] (1− x ) films: structure and optical properties

Materials research express, 2017-07, Vol.4 (7), p.75010

2017

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Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots

Nanotechnology, 2009-08, Vol.20 (34), p.345702-345702

2009

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Low-dimensional effects in a three-dimensional system of Si quantum dots modified by high-energy ion irradiation

Nanotechnology, 2009-05, Vol.20 (18), p.185401

2009

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The modification of Si nanocrystallites embedded in a dielectric matrix by high energy ion irradiation

Nanotechnology, 2009-03, Vol.20 (9), p.095205

2009

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Structure and optical properties of silicon nanopowders

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-02, Vol.147 (2), p.222-225

2008

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Silicon shallow doping by erbium and oxygen recoils implantation

Solid state communications, 2016-09, Vol.242, p.41-45

2016

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Raman shifts and photoluminescence of the InSb nanocrystals ion beam-synthesized in buried SiO2 layers

Journal of luminescence, 2018-12, Vol.204, p.656-662

2018

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The properties of the nanometer thick Si/Ge films-on-insulator produced by Ge+ ion implantation and subsequent hydrogen transfer

Physica status solidi. C, 2008-12, Vol.5 (12), p.3724-3727

2008

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Implantation of P ions in SiO2 layers with embedded Si nanocrystals

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2004-08, Vol.222 (3-4), p.497-504

2004

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Optical transitions in Ge nanocrystals formed by high-pressure annealing of Ge+ ion implanted SiO2 films

Solid state communications, 2004-01, Vol.129 (1), p.63-68

2004

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Epitaxial silicon films deposited at high rates by gas-jet electron beam plasma CVD

Surface & coatings technology, 2003-09, Vol.174, p.1178-1181

2003

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Welding of dissimilar materials with interlayers employment containing copper and tantalum

Metal Working and Material Science, 2015-12 (4), p.61-71

2015

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Endotaxial growth of InSb nanocrystals at the bonding interface of the In+ and Sb+ ion implanted SOI structure

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2009-05, Vol.267 (8-9), p.1360-1363

2009

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The Reason of Sign-Variable Thermoelectric Effect in Fe86Mn13C Alloy

Advanced materials research, 2014, Vol.871, p.226-230

2014

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The Properties of Hydrostatically Strained Ge and Si Nanocrystals in Silicon Dioxide Matrix

Solid state phenomena, 2005-12, Vol.108-109, p.39-44

2005

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Nanometer-thick SGOI structures produced by Ge+ ion implantation of SiO2 films and subsequent hydrogen transfer of Si layers

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2009-05, Vol.267 (8-9), p.1277-1280

2009

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Lorentz's Electron Microscopy of Thin Films with Frustrated Magnetic Structure

Solid state phenomena, 2014-04, Vol.215, p.448-453

2014

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Formation of a resonant microcavity in hydrogen ion-implanted silicon-on-insulator structures

Journal of applied physics, 2007-10, Vol.102 (7), p.074312-074312-10

2007

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Wavelength-selective enhancement of the intensity of visible photoluminescence in hydrogen-ion-implanted silicon-on-insulator structures annealed under high pressure

Applied physics letters, 2006-07, Vol.89 (1), p.013106-013106-3

2006

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Consecutive stages of redistribution of oxygen implanted in silicon heavily doped with boron

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2006-10, Vol.251 (2), p.445-450

2006

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SiGe Heterostructures-on-Insulator Produced by Ge+-Ion Implantation and Subsequent Hydrogen Transfer

Solid state phenomena, 2008-01, Vol.131-133, p.143-148

2008

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Crystallization of InSb Phase Near the Bonding Interface of Silicon-on-Insulator Structure

Solid state phenomena, 2008-01, Vol.131-133, p.137-142

2008

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Fabrication and preliminary testing of regular microporous membranes manufactured by deep X-ray lithography at the VEPP-3 storage ring

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 1995-05, Vol.359 (1), p.404-408

1995

Volltextzugriff (PDF)

Femtosecond and Nanosecond Laser Pulse Crystallization of Thin a-Si:H Films on Non-Refractory Glass Substrates

Solid state phenomena, 2008-01, Vol.131-133, p.479-484

2008

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The regularities of phase formation in Fe3Si(111)/Si(111) structure at vacuum annealing

Ge nanocrystals formed by furnace annealing of Ge ( x ) [SiO 2 ] (1− x ) films: structure and optical properties

Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots

Low-dimensional effects in a three-dimensional system of Si quantum dots modified by high-energy ion irradiation

The modification of Si nanocrystallites embedded in a dielectric matrix by high energy ion irradiation

Structure and optical properties of silicon nanopowders

Silicon shallow doping by erbium and oxygen recoils implantation

Raman shifts and photoluminescence of the InSb nanocrystals ion beam-synthesized in buried SiO2 layers

The properties of the nanometer thick Si/Ge films-on-insulator produced by Ge+ ion implantation and subsequent hydrogen transfer

Implantation of P ions in SiO2 layers with embedded Si nanocrystals

Optical transitions in Ge nanocrystals formed by high-pressure annealing of Ge+ ion implanted SiO2 films

Epitaxial silicon films deposited at high rates by gas-jet electron beam plasma CVD

Welding of dissimilar materials with interlayers employment containing copper and tantalum

Endotaxial growth of InSb nanocrystals at the bonding interface of the In+ and Sb+ ion implanted SOI structure

The Reason of Sign-Variable Thermoelectric Effect in Fe86Mn13C Alloy

The Properties of Hydrostatically Strained Ge and Si Nanocrystals in Silicon Dioxide Matrix

Nanometer-thick SGOI structures produced by Ge+ ion implantation of SiO2 films and subsequent hydrogen transfer of Si layers

Lorentz's Electron Microscopy of Thin Films with Frustrated Magnetic Structure

Formation of a resonant microcavity in hydrogen ion-implanted silicon-on-insulator structures

Wavelength-selective enhancement of the intensity of visible photoluminescence in hydrogen-ion-implanted silicon-on-insulator structures annealed under high pressure

Consecutive stages of redistribution of oxygen implanted in silicon heavily doped with boron

SiGe Heterostructures-on-Insulator Produced by Ge+-Ion Implantation and Subsequent Hydrogen Transfer

Crystallization of InSb Phase Near the Bonding Interface of Silicon-on-Insulator Structure

Fabrication and preliminary testing of regular microporous membranes manufactured by deep X-ray lithography at the VEPP-3 storage ring

Femtosecond and Nanosecond Laser Pulse Crystallization of Thin a-Si:H Films on Non-Refractory Glass Substrates

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