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0.1 V 13 GHz Transformer-Based Quadrature Voltage-Controlled Oscillator with a Capacitor Coupling Technique in 90 nm Complementary Metal Oxide Semiconductor

Japanese Journal of Applied Physics, 2012-04, Vol.51 (4S), p.4

2012

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0.13 µm Metal-Oxide-Nitride-Oxide-Semiconductor Single Transistor Memory Cell with Separated Source Line

Japanese Journal of Applied Physics, 2000-02, Vol.39 (2R), p.417

2000

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Al 0.17 Ga 0.83 N Film Using Middle-Temperature Intermediate Layer Grown on (0001) Sapphire Substrate by Metal-Organic Chemical Vapor Deposition

Japanese Journal of Applied Physics, 2007-02, Vol.46 (2R), p.491

2007

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0.1μm complementary metal–oxide–semiconductors and beyond

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1996, Vol.14 (6), p.4020-4023

Toriumi, Akira

1996

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Al 0.25 Ga 0.75 N/GaN enhancement-mode MOS high-electron-mobility transistors with Al 2 O 3 dielectric obtained by ozone water oxidization method

Japanese Journal of Applied Physics, 2016-04, Vol.55 (4), p.44102

2016

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0.25-\mbox{$\mu$m}-Emitter InP Heterojunction Bipolar Transistors with a Thin Ledge Structure

Jpn J Appl Phys, 2010-04, Vol.49 (4), p.04DF02-04DF02-5

2010

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A 0.25 µm Complementary Metal Oxide Semiconductor Field Effect Transistor (CMOSFET) using Halo Implantation for 1 Gbit Dynamic Random Access Memory (DRAM)

Japanese Journal of Applied Physics, 1996-02, Vol.35 (2S), p.865

1996

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0.25-µm-Emitter InP Heterojunction Bipolar Transistors with a Thin Ledge Structure

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4S), p.4

2010

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Al 0.30 Ga 0.70 N /GaN MODFET with triple-teeth metal for RF and high-power applications

Physica scripta, 2022-03, Vol.97 (3), p.34003

2022

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Al 0.35 Ga 0.65 As/InGaP heterojunction solar cell based on temperature-graded growth

Japanese Journal of Applied Physics, 2023-06, Vol.62 (6), p.65503

2023

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A 0.4 µm Gate-All-Around TFT (GAT) Using a Dummy Nitride Pattern for High-Density Memories

Japanese Journal of Applied Physics, 1995-02, Vol.34 (2S), p.895

1995

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Al 0.44 Ga 0.56 N spacer layer to prevent electron accumulation inside barriers in lattice-matched InAlN/AlGaN/AlN/GaN heterostructures

Applied physics letters, 2011-04, Vol.98 (14), p.142117-142117-3

2011

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( Na 0.5 Bi 0.5 ) 0.87 Pb 0.13 Ti O 3 thin films on different substrates for ferroelectric memory applications

Applied physics letters, 2007-11, Vol.91 (19), p.192910-192910-3

2007

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Li 0.5 Bi 2.5 Nb 2 O 9 : An alkali‐metal bismuth layer structured ferroelectric with high T C and small orthorhombic distortion

Journal of the American Ceramic Society, 2023-09, Vol.106 (9), p.5303-5310

2023

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0.5 V 5.8 GHz highly linear current-reuse voltage-controlled oscillator with back-gate tuning technique

Japanese Journal of Applied Physics, 2015-04, Vol.54 (4S), p.4-1-04DE06-6

2015

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0.5 µm Silicon-on-Sapphire Metal Oxide Semiconductor Field Effect Transistor for RF Power Amplifier Applications

Japanese Journal of Applied Physics, 2003-08, Vol.42 (Part 1, No. 8), p.4982-4986

2003

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A 0.5-μm-thick polycrystalline silicon Schottky diode with rectification ratio of 106

Applied physics letters, 2002-02, Vol.80 (8), p.1474-1476

2002

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In 0.53 Ga 0.47 As based metal oxide semiconductor capacitors with atomic layer deposition Zr O 2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1 nm

Applied physics letters, 2008-06, Vol.92 (22), p.222904-222904-3

2008

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In 0.53 Ga 0.47 As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys

Applied physics letters, 2012-02, Vol.100 (7), p.073504-073504-3

2012

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In 0.53 Ga 0.47 As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Shallow Metallic Source and Drain Extensions and Offset N + Doped Regions for Leakage Suppression

Japanese Journal of Applied Physics, 2012-02, Vol.51 (2S), p.2

2012

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In 0.53 Ga 0.47 As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Shallow Metallic Source and Drain Extensions and Offset N + Doped Regions for Leakage Suppression

Japanese Journal of Applied Physics, 2012-02, Vol.51 (2S), p.2

2012

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0.6 V Supply Complementary Metal Oxide Semiconductor Amplifier Using Noise Reduction Technique of Autozeroing and Chopper Stabilization

Japanese Journal of Applied Physics, 2007-04, Vol.46 (4S), p.2252

2007

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Al 0.64 Ga 0.36 N channel MOSHFET on single crystal bulk AlN substrate

Applied physics express, 2023-06, Vol.16 (6), p.61001

2023

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La 0.7 Sr 0.3 MnO 3 : A single, conductive-oxide buffer layer for the development of YBa2Cu3O7−δ coated conductors

Applied physics letters, 2001-10, Vol.79 (14), p.2205-2207

2001

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077-V drive voltage electro-optic modulator with bandwidth exceeding 67 GHz

Optics letters, 2014-10, Vol.39 (20), p.6074

2014

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0.1 V 13 GHz Transformer-Based Quadrature Voltage-Controlled Oscillator with a Capacitor Coupling Technique in 90 nm Complementary Metal Oxide Semiconductor

0.13 µm Metal-Oxide-Nitride-Oxide-Semiconductor Single Transistor Memory Cell with Separated Source Line

Al 0.17 Ga 0.83 N Film Using Middle-Temperature Intermediate Layer Grown on (0001) Sapphire Substrate by Metal-Organic Chemical Vapor Deposition

0.1μm complementary metal–oxide–semiconductors and beyond

Al 0.25 Ga 0.75 N/GaN enhancement-mode MOS high-electron-mobility transistors with Al 2 O 3 dielectric obtained by ozone water oxidization method

0.25-\mbox{$\mu$m}-Emitter InP Heterojunction Bipolar Transistors with a Thin Ledge Structure

A 0.25 µm Complementary Metal Oxide Semiconductor Field Effect Transistor (CMOSFET) using Halo Implantation for 1 Gbit Dynamic Random Access Memory (DRAM)

0.25-µm-Emitter InP Heterojunction Bipolar Transistors with a Thin Ledge Structure

Al 0.30 Ga 0.70 N /GaN MODFET with triple-teeth metal for RF and high-power applications

Al 0.35 Ga 0.65 As/InGaP heterojunction solar cell based on temperature-graded growth

A 0.4 µm Gate-All-Around TFT (GAT) Using a Dummy Nitride Pattern for High-Density Memories

Al 0.44 Ga 0.56 N spacer layer to prevent electron accumulation inside barriers in lattice-matched InAlN/AlGaN/AlN/GaN heterostructures

( Na 0.5 Bi 0.5 ) 0.87 Pb 0.13 Ti O 3 thin films on different substrates for ferroelectric memory applications

Li 0.5 Bi 2.5 Nb 2 O 9 : An alkali‐metal bismuth layer structured ferroelectric with high T C and small orthorhombic distortion

0.5 V 5.8 GHz highly linear current-reuse voltage-controlled oscillator with back-gate tuning technique

0.5 µm Silicon-on-Sapphire Metal Oxide Semiconductor Field Effect Transistor for RF Power Amplifier Applications

A 0.5-μm-thick polycrystalline silicon Schottky diode with rectification ratio of 106

In 0.53 Ga 0.47 As based metal oxide semiconductor capacitors with atomic layer deposition Zr O 2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1 nm

In 0.53 Ga 0.47 As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys

In 0.53 Ga 0.47 As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Shallow Metallic Source and Drain Extensions and Offset N + Doped Regions for Leakage Suppression

In 0.53 Ga 0.47 As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Shallow Metallic Source and Drain Extensions and Offset N + Doped Regions for Leakage Suppression

0.6 V Supply Complementary Metal Oxide Semiconductor Amplifier Using Noise Reduction Technique of Autozeroing and Chopper Stabilization

Al 0.64 Ga 0.36 N channel MOSHFET on single crystal bulk AlN substrate

La 0.7 Sr 0.3 MnO 3 : A single, conductive-oxide buffer layer for the development of YBa2Cu3O7−δ coated conductors

077-V drive voltage electro-optic modulator with bandwidth exceeding 67 GHz

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