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High-performance InGaAs/InAlAs single-photon avalanche diode with a triple-mesa structure for near-infrared photon detection

Optics letters, 2021-06, Vol.46 (11), p.2670-2673

2021

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Effects of surface reconstruction on the epitaxial growth of III-Sb on GaAs using interfacial misfit array

Applied surface science, 2017-03, Vol.399, p.220-228

2017

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Growth of InAs0.32Sb0.68 on GaAs using a thin GaInSb buffer and strain superlattice layers

AIP advances, 2021-04, Vol.11 (4), p.045203-045203-5

2021

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Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations

Materials letters, 2015-11, Vol.158, p.258-261

2015

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Strain-relaxed buffer technology based on metamorphic InxAl1-xAs

Journal of crystal growth, 2015-08, Vol.424, p.68-76

2015

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N-Channel InGaAs Field-Effect Transistors formed on Germanium-on-Insulator Substrates

Applied physics express, 2012-11, Vol.5 (11), p.116502

2012

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Carrier mobility dependence of indium antimonide-bismide on carrier concentration, temperature, and bismuth composition grown on semi-insulating gallium arsenide substrate

Semiconductor science and technology, 2024-06, Vol.39 (6), p.65008

2024

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Semi-empirical growth model of InSbBi grown by molecular beam epitaxy

Materials science & engineering. B, Solid-state materials for advanced technology, 2024-02, Vol.300, p.117067, Article 117067

2024

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Effect of growth temperature and Sb over in flux ratio on the Bi content and the surface morphology of InSbBi grown by molecular beam epitaxy

Materials science & engineering. B, Solid-state materials for advanced technology, 2023-08, Vol.294, p.116533, Article 116533

2023

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Long wavelength mid-infrared multi-gases spectroscopy using tunable single-mode slot waveguide quantum cascade laser

Optics express, 2023-08, Vol.31 (17), p.27543

2023

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Supersymmetric quantum cascade laser array

Applied physics letters, 2024-03, Vol.124 (11)

2024

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Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region

Optics express, 2018-03, Vol.26 (6), p.7227-7234

2018

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Widely tunable single-mode slot waveguide quantum cascade laser array

Optics express, 2022-01, Vol.30 (1), p.629-640

2022

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Molecular beam epitaxy growth of bulk GaNAsSb on Ge/graded-SiGe/Si substrate

Journal of crystal growth, 2009-03, Vol.311 (7), p.1754-1757

2009

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Long wavelength (λ > 13 μm) quantum cascade laser based on diagonal transition and three-phonon-resonance design

Applied physics letters, 2021-09, Vol.119 (13)

2021

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Monolithic Integration of InSb Photodetector on Silicon for Mid-Infrared Silicon Photonics

ACS photonics, 2018-04, Vol.5 (4), p.1512-1520

2018

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Growth and characterization of InSb on (100) Si for mid-infrared application

Applied surface science, 2018-05, Vol.440, p.939-945

2018

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Beam combining of a broadly and continuously tunable quantum cascade laser

Optics express, 2022-09, Vol.30 (20), p.35999-36009

2022

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Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer

Journal of crystal growth, 2018-05, Vol.490, p.97-103

2018

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Effect of in situ annealing on the structural and electrical properties and infrared photodetection of III-Sb on GaAs using interfacial misfit array

Applied surface science, 2018-01, Vol.427, p.876-883

2018

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Formation of periodic interfacial misfit dislocation array at the InSb/GaAs interface via surface anion exchange

Journal of applied physics, 2016-07, Vol.120 (3)

2016

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Authors’ reply

Singapore medical journal, 2018-08, Vol.59 (8), p.451-451

2018

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Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs)

Optics express, 2017-12, Vol.25 (25), p.31853-31862

2017

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Epidemiology of paediatric poisoning presenting to a children's emergency department in Singapore over a five-year period

Singapore medical journal, 2018-05, Vol.59 (5), p.247-250

2018

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Degradation of subcells and tunnel junctions during growth of GaInP/Ga(In)As/GaNAsSb/Ge 4‐junction solar cells

Progress in photovoltaics, 2017-11, Vol.25 (11), p.887-895

2017

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High-performance InGaAs/InAlAs single-photon avalanche diode with a triple-mesa structure for near-infrared photon detection

Effects of surface reconstruction on the epitaxial growth of III-Sb on GaAs using interfacial misfit array

Growth of InAs0.32Sb0.68 on GaAs using a thin GaInSb buffer and strain superlattice layers

Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations

Strain-relaxed buffer technology based on metamorphic InxAl1-xAs

N-Channel InGaAs Field-Effect Transistors formed on Germanium-on-Insulator Substrates

Carrier mobility dependence of indium antimonide-bismide on carrier concentration, temperature, and bismuth composition grown on semi-insulating gallium arsenide substrate

Semi-empirical growth model of InSbBi grown by molecular beam epitaxy

Effect of growth temperature and Sb over in flux ratio on the Bi content and the surface morphology of InSbBi grown by molecular beam epitaxy

Long wavelength mid-infrared multi-gases spectroscopy using tunable single-mode slot waveguide quantum cascade laser

Supersymmetric quantum cascade laser array

Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region

Widely tunable single-mode slot waveguide quantum cascade laser array

Molecular beam epitaxy growth of bulk GaNAsSb on Ge/graded-SiGe/Si substrate

Long wavelength (λ > 13 μm) quantum cascade laser based on diagonal transition and three-phonon-resonance design

Monolithic Integration of InSb Photodetector on Silicon for Mid-Infrared Silicon Photonics

Growth and characterization of InSb on (100) Si for mid-infrared application

Beam combining of a broadly and continuously tunable quantum cascade laser

Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer

Effect of in situ annealing on the structural and electrical properties and infrared photodetection of III-Sb on GaAs using interfacial misfit array

Formation of periodic interfacial misfit dislocation array at the InSb/GaAs interface via surface anion exchange

Authors’ reply

Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs)

Epidemiology of paediatric poisoning presenting to a children's emergency department in Singapore over a five-year period

Degradation of subcells and tunnel junctions during growth of GaInP/Ga(In)As/GaNAsSb/Ge 4‐junction solar cells

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