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High-Frequency Performance of Schottky Source/Drain Silicon pMOS Devices

IEEE electron device letters, 2008-04, Vol.29 (4), p.396-398

2008

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Static and High-Frequency Behavior and Performance of Schottky-Barrier p-MOSFET Devices

IEEE transactions on electron devices, 2007-10, Vol.54 (10), p.2796-2802

2007

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Evidence of reduced self-heating in strained Si MOSFETs

IEEE electron device letters, 2005-09, Vol.26 (9), p.684-686

2005

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Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy

Journal of applied physics, 2004-12, Vol.96 (11), p.6470-6476

2004

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Impact ionisation in strained SiGe pMOSFETs

Electronics letters, 2005-08, Vol.41 (16), p.925-927

2005

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Low frequency noise measurements of p-channel Si/sub 1-x/Ge/sub x/ MOSFET's

IEEE transactions on electron devices, 1999-07, Vol.46 (7), p.1484-1486

1999

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Two-dimensional hole gas in SiGe heterostructures: electrical properties and field effect applications

Selected Topics in Group IV and II–VI Semiconductors, 1996, p.353-361

Whall, T.E.

1996

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Transconductance and mobility of Si:B delta MOSFETs

IEEE transactions on electron devices, 1993-01, Vol.40 (1), p.157-162

1993

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Study of Two-Dimensional Hole Gas at Si/SiGe/Si Inverted Interface

Acta physica Polonica, A, 1998-09, Vol.94 (3), p.503-508

1998

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Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs

2009 IEEE International Electron Devices Meeting (IEDM), 2009, p.1-4

2009

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Indication of Non-equilibrium Transport in SiGe p-MOSFETs

30th European Solid-State Device Research Conference, 2000, p.224-227

2000

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Accurate effective mobility extraction in SOI MOS transistors

2009 10th International Conference on Ultimate Integration of Silicon, 2009, p.31-34

2009

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Channel backscattering characteristics of high performance germanium pMOSFETs

2008 9th International Conference on Ultimate Integration of Silicon, 2008, p.7-10

2008

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Silicon boron delta doped fet : growth and fabrication

Electronics letters, 1992, Vol.28 (7), p.667-669

1992

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Stress in Thin Layers Applied by Substrate Bending; Calibration and Potentialities

MRS proceedings, 1993, Vol.308, Article 91

1993

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The role of interface states in the low temperature mobility of hafnium-oxide gated Ge-pMOSFETs and the effect of a hydrogen anneal

2008 9th International Conference on Ultimate Integration of Silicon, 2008, p.19-22

2008

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Anomalous Ge diffusion effects during Ge-condensation

2008 9th International Conference on Ultimate Integration of Silicon, 2008, p.207-210

2008

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Maximum entropy mobility spectrum analysis for magnetotransport characterization of semiconductor multilayer structures

Proceedings. International Semiconductor Conference, 2002, Vol.2, p.415-418 vol.2

2002

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P-Si/sub 0.3/Ge/sub 0.7/and p-Si/sub 0.2/Ge/sub 0.8/ MOSFETs of enhanced performance

ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003, 2003, p.557-560

2003

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Si/Si(0.64)Ge(0.36)/Si pMOSFETs with Enhanced Voltage Gain and Low 1/f Noise

31st European Solid-State Device Research Conference, 2001, p.179-182

2001

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Electrochemical capacitance–voltage depth profiling of heavily boron-doped silicon

Selected Topics in Group IV and II–VI Semiconductors, 1996, p.109-112

1996

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Enhanced Velocity Overshoot and Transconductance in Si/Si(0.64)Ge(0.36)/Si pMOSFETs - Predictions for Deep Submicron Devices

31st European Solid-State Device Research Conference, 2001, p.199-202

2001

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Observation of piezoelectric-like behaviour in coherently strained B-doped (100) SiGe/Si heterostructures

Selected Topics in Group IV and II–VI Semiconductors, 1996, p.382-385

1996

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Photoluminescence and Raman spectroscopy of Si/Si1−xGex quantum dots

Selected Topics in Group IV and II–VI Semiconductors, 1996, p.280-284

1996

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High-Frequency Performance of Schottky Source/Drain Silicon pMOS Devices

Static and High-Frequency Behavior and Performance of Schottky-Barrier p-MOSFET Devices

Evidence of reduced self-heating in strained Si MOSFETs

Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy

Impact ionisation in strained SiGe pMOSFETs

Low frequency noise measurements of p-channel Si/sub 1-x/Ge/sub x/ MOSFET's

Two-dimensional hole gas in SiGe heterostructures: electrical properties and field effect applications

Transconductance and mobility of Si:B delta MOSFETs

Study of Two-Dimensional Hole Gas at Si/SiGe/Si Inverted Interface

Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs

Indication of Non-equilibrium Transport in SiGe p-MOSFETs

Accurate effective mobility extraction in SOI MOS transistors

Channel backscattering characteristics of high performance germanium pMOSFETs

Silicon boron delta doped fet : growth and fabrication

Stress in Thin Layers Applied by Substrate Bending; Calibration and Potentialities

The role of interface states in the low temperature mobility of hafnium-oxide gated Ge-pMOSFETs and the effect of a hydrogen anneal

Anomalous Ge diffusion effects during Ge-condensation

Maximum entropy mobility spectrum analysis for magnetotransport characterization of semiconductor multilayer structures

P-Si/sub 0.3/Ge/sub 0.7/and p-Si/sub 0.2/Ge/sub 0.8/ MOSFETs of enhanced performance

Si/Si(0.64)Ge(0.36)/Si pMOSFETs with Enhanced Voltage Gain and Low 1/f Noise

Electrochemical capacitance–voltage depth profiling of heavily boron-doped silicon

Enhanced Velocity Overshoot and Transconductance in Si/Si(0.64)Ge(0.36)/Si pMOSFETs - Predictions for Deep Submicron Devices

Observation of piezoelectric-like behaviour in coherently strained B-doped (100) SiGe/Si heterostructures

Photoluminescence and Raman spectroscopy of Si/Si1−xGex quantum dots

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