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4-phenylbutyrate exerts stage-specific effects on cardiac differentiation via HDAC inhibition

PloS one, 2021-04, Vol.16 (4), p.e0250267-e0250267

2021

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Hydrogen-terminated diamond MOSFETs on (0 0 1) single crystal diamond with state of the art high RF power density

Functional diamond (Online), 2022-12, Vol.2 (1), p.64-70

2022

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Preparation and electrical transport properties of quasi free standing bilayer graphene on SiC (0001) substrate by H intercalation

Applied physics letters, 2014-11, Vol.105 (18)

2014

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Ultrafast terahertz transparency boosting in graphene meta-cavities

Nanophotonics (Berlin, Germany), 2022-12, Vol.11 (21), p.4899-4907

2022

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Transport Properties of the Two-Dimensional Hole Gas for H-Terminated Diamond with an Al2O3 Passivation Layer

Crystals (Basel), 2022-03, Vol.12 (3), p.390

2022

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Low-Temperature Thermal Transport Characteristics in Epitaxial Bilayer Graphene Microbridges

ACS omega, 2024-05, Vol.9 (21), p.23053-23059

2024

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Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond

Journal of semiconductors, 2020-12, Vol.41 (12), p.122801-85

2020

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Polycrystalline diamond MESFETs by Au-mask technology for RF applications

Science China. Technological sciences, 2013-04, Vol.56 (4), p.957-962

2013

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Design and realization of a X-band graphene amplifier MMIC

2017 IEEE 12th International Conference on ASIC (ASICON), 2017, p.694-697

2017

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Self-aligned graphene field-effect transistors on SiC (0001) substrates with self-oxidized gate dielectric

Journal of semiconductors, 2014-07, Vol.35 (7), p.74006-1-074006-5

2014

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Field Effect Transistors and Low Noise Amplifier MMICs of Monolayer Graphene

IEEE electron device letters, 2021-02, Vol.42 (2), p.268-271

2021

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Two-Stage Ku-Band Graphene Low Noise Amplifier MMIC With Improved Fabrication Process

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1596-1599

2022

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Ultra-extraordinary optical transmission induced by cascade coupling of surface plasmon polaritons in composite graphene–dielectric stack

Optics express, 2020-10, Vol.28 (21), p.30502-30512

2020

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Photo-induced enhanced negative absorption in the graphene-dielectric hybrid meta-structure

Optics express, 2020-03, Vol.28 (6), p.8830-8842

2020

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Epitaxial graphene gas sensors on SiC substrate with high sensitivity

Journal of semiconductors, 2020-03, Vol.41 (3), p.32101

2020

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Contaminant-Free Wafer-Scale Assembled h‑BN/Graphene van der Waals Heterostructures for Graphene Field-Effect Transistors

ACS applied nano materials, 2021-06, Vol.4 (6), p.5677-5684

2021

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Source-field-plated Ga 2 O 3 MOSFET with a breakdown voltage of 550 V

Journal of semiconductors, 2019-01, Vol.40 (1), p.12803

2019

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Source-field-plated Ga2O3 MOSFET with a breakdown voltage of 550 V

Journal of semiconductors, 2019-01, Vol.40 (1)

2019

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Source-Field-Plated \beta -Ga2O3 MOSFET With Record Power Figure of Merit of 50.4 MW/cm2

IEEE electron device letters, 2019-01, Vol.40 (1), p.83-86

2019

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Source-Field-Plated [Formula Omitted]-Ga2O3 MOSFET With Record Power Figure of Merit of 50.4 MW/cm2

IEEE electron device letters, 2019-01, Vol.40 (1), p.83

2019

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High‐Frequency Flexible Graphene Field‐Effect Transistors with Short Gate Length of 50 nm and Record Extrinsic Cut‐Off Frequency

Physica status solidi. PSS-RRL. Rapid research letters, 2018-05, Vol.12 (5), p.n/a

2018

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High‐Frequency Flexible Graphene Field‐Effect Transistors with Short Gate Length of 50nm and Record Extrinsic Cut‐Off Frequency

Physica status solidi. PSS-RRL. Rapid research letters, 2018-05, Vol.12 (5)

2018

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Growth of graphene with large single-crystal domains by Ni foam-assisted structure and its high-gain field-effect transistors

Nanoscale advances, 2019-03, Vol.1 (3), p.113-1135

2019

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An extrinsic f max > 100 GHz InAlN/GaN HEMT with AlGaN back barrier

Journal of semiconductors, 2013-04, Vol.34 (4), p.44006

2013

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RF Performance of Hydrogenated Single Crystal Diamond MOSFETs

2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2019, p.1-3

2019

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4-phenylbutyrate exerts stage-specific effects on cardiac differentiation via HDAC inhibition

Hydrogen-terminated diamond MOSFETs on (0 0 1) single crystal diamond with state of the art high RF power density

Preparation and electrical transport properties of quasi free standing bilayer graphene on SiC (0001) substrate by H intercalation

Ultrafast terahertz transparency boosting in graphene meta-cavities

Transport Properties of the Two-Dimensional Hole Gas for H-Terminated Diamond with an Al2O3 Passivation Layer

Low-Temperature Thermal Transport Characteristics in Epitaxial Bilayer Graphene Microbridges

Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond

Polycrystalline diamond MESFETs by Au-mask technology for RF applications

Design and realization of a X-band graphene amplifier MMIC

Self-aligned graphene field-effect transistors on SiC (0001) substrates with self-oxidized gate dielectric

Field Effect Transistors and Low Noise Amplifier MMICs of Monolayer Graphene

Two-Stage Ku-Band Graphene Low Noise Amplifier MMIC With Improved Fabrication Process

Ultra-extraordinary optical transmission induced by cascade coupling of surface plasmon polaritons in composite graphene–dielectric stack

Photo-induced enhanced negative absorption in the graphene-dielectric hybrid meta-structure

Epitaxial graphene gas sensors on SiC substrate with high sensitivity

Contaminant-Free Wafer-Scale Assembled h‑BN/Graphene van der Waals Heterostructures for Graphene Field-Effect Transistors

Source-field-plated Ga 2 O 3 MOSFET with a breakdown voltage of 550 V

Source-field-plated Ga2O3 MOSFET with a breakdown voltage of 550 V

Source-Field-Plated \beta -Ga2O3 MOSFET With Record Power Figure of Merit of 50.4 MW/cm2

Source-Field-Plated [Formula Omitted]-Ga2O3 MOSFET With Record Power Figure of Merit of 50.4 MW/cm2

High‐Frequency Flexible Graphene Field‐Effect Transistors with Short Gate Length of 50 nm and Record Extrinsic Cut‐Off Frequency

High‐Frequency Flexible Graphene Field‐Effect Transistors with Short Gate Length of 50nm and Record Extrinsic Cut‐Off Frequency

Growth of graphene with large single-crystal domains by Ni foam-assisted structure and its high-gain field-effect transistors

An extrinsic f max > 100 GHz InAlN/GaN HEMT with AlGaN back barrier

RF Performance of Hydrogenated Single Crystal Diamond MOSFETs

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