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Long and irregular menstrual cycles, polycystic ovary syndrome, and ovarian cancer risk in a population‐based case‐control study

International journal of cancer, 2017-01, Vol.140 (2), p.285-291

2017

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Methylation levels at imprinting control regions are not altered with ovulation induction or in vitro fertilization in a birth cohort

Human reproduction (Oxford), 2012-07, Vol.27 (7), p.2208-2216

2012

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Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- k/Metal Gate Stacks Directly on SiGe

IEEE electron device letters, 2009-03, Vol.30 (3), p.285-287

2009

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Comparison of effective work function extraction methods using capacitance and current measurement techniques

IEEE electron device letters, 2006-07, Vol.27 (7), p.598-601

2006

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IEEE_Xplore

Comparison of Uniaxial Wafer Bending and Contact-Etch-Stop-Liner Stress Induced Performance Enhancement on Double-Gate FinFETs

IEEE electron device letters, 2008-05, Vol.29 (5), p.480-482

2008

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IEEE_Xplore

A Simplified Superior Floating-Body/Gate DRAM Cell

IEEE electron device letters, 2009-03, Vol.30 (3), p.282-284

2009

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IEEE_Xplore

Parental smoking during pregnancy and risk of overweight and obesity in the daughter

International Journal of Obesity, 2013-10, Vol.37 (10), p.1356-1363

2013

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New Hot-Carrier Injection Mechanism at Source Side in Nanoscale Floating-Body MOSFETs

IEEE electron device letters, 2009-01, Vol.30 (1), p.54-56

2009

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IEEE_Xplore

Electrical observation of deep traps in high-/spl kappa//metal gate stack transistors

IEEE electron device letters, 2005-11, Vol.26 (11), p.839-841

2005

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IEEE_Xplore

Improved ge surface passivation with ultrathin SiOx enabling high-mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack

IEEE electron device letters, 2007-04, Vol.28 (4), p.308-311

2007

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Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High- k/Metal Gates CMOS FinFETs for Multi- V Engineering

IEEE transactions on electron devices, 2010-03, Vol.57 (3), p.626-631

2010

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IEEE_Xplore

Dipole Moment Model Explaining nFET Vt Tuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics

2007 IEEE Symposium on VLSI Technology, 2007, p.68-69

2007

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IEEE_Xplore

On Oxygen Deficiency and Fast Transient Charge-Trapping Effects in High- k Dielectrics

IEEE electron device letters, 2006-12, Vol.27 (12), p.984-987

2006

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IEEE_Xplore

Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- [Formula Omitted]/Metal Gate Stacks Directly on SiGe

IEEE electron device letters, 2009-03, Vol.30 (3), p.285-287

2009

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Strain additivity in III-V channels for CMOSFETs beyond 22nm technology node

2008 Symposium on VLSI Technology, 2008, p.182-183

2008

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IEEE_Xplore

Demonstration of [Formula Omitted] pMOSFETs With [Formula Omitted] Channels, High [Formula Omitted], and Controlled Short Channel Effects (SCEs)

IEEE electron device letters, 2008-09, Vol.29 (9), p.1017

2008

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Electrical observation of deep traps in high-[kappa]/metal gate stack transistors

IEEE electron device letters, 2005-11, Vol.26 (11), p.839

2005

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Demonstration of L \sim \hbox\ \hbox pMOSFETs With \hbox\hbox/\hbox Channels, High I/I\ (≫ \hbox \times \hbox^) , and Controlled Short Channel Effects (SCEs)

IEEE electron device letters, 2008-09, Vol.29 (9), p.1017-1020

2008

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IEEE_Xplore

On Oxygen Deficiency and Fast Transient Charge-Trapping Effects in High-[Formula Omitted] Dielectrics

IEEE electron device letters, 2006-12, Vol.27 (12), p.984

2006

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Band-Engineered Low PMOS VT with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme

2007 IEEE Symposium on VLSI Technology, 2007, p.154-155

2007

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IEEE_Xplore

Improved Ge Surface Passivation With Ultrathin \hbox Enabling High-Mobility Surface Channel pMOSFETs Featuring a HfSiO/WN Gate Stack

IEEE electron device letters, 2007-04, Vol.28 (4), p.308-311

2007

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IEEE_Xplore

Adjusting to 3D devices in a 2D device world

2008 IEEE International SOI Conference, 2008, p.115-116

2008

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IEEE_Xplore

Thermal response of Ru electrodes in contact with SiO{sub 2} and Hf-based high-k gate dielectrics

Journal of applied physics, 2005-08, Vol.98 (4)

2005

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Mechanisms limiting EOT scaling and gate leakage currents of high-k/metal gate stacks directly on SiGe and a method to enable sub-1nm EOT

2008 Symposium on VLSI Technology, 2008, p.82-83

2008

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IEEE_Xplore

Systematic investigation of amorphous transition-metal-silicon-nitride electrodes for metal gate CMOS applications

Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005, 2005, p.46-47

2005

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IEEE_Xplore

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Long and irregular menstrual cycles, polycystic ovary syndrome, and ovarian cancer risk in a population‐based case‐control study

Methylation levels at imprinting control regions are not altered with ovulation induction or in vitro fertilization in a birth cohort

Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- k/Metal Gate Stacks Directly on SiGe

Comparison of effective work function extraction methods using capacitance and current measurement techniques

Comparison of Uniaxial Wafer Bending and Contact-Etch-Stop-Liner Stress Induced Performance Enhancement on Double-Gate FinFETs

A Simplified Superior Floating-Body/Gate DRAM Cell

Parental smoking during pregnancy and risk of overweight and obesity in the daughter

New Hot-Carrier Injection Mechanism at Source Side in Nanoscale Floating-Body MOSFETs

Electrical observation of deep traps in high-/spl kappa//metal gate stack transistors

Improved ge surface passivation with ultrathin SiOx enabling high-mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack

Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High- k/Metal Gates CMOS FinFETs for Multi- V Engineering

Dipole Moment Model Explaining nFET Vt Tuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics

On Oxygen Deficiency and Fast Transient Charge-Trapping Effects in High- k Dielectrics

Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- [Formula Omitted]/Metal Gate Stacks Directly on SiGe

Strain additivity in III-V channels for CMOSFETs beyond 22nm technology node

Demonstration of [Formula Omitted] pMOSFETs With [Formula Omitted] Channels, High [Formula Omitted], and Controlled Short Channel Effects (SCEs)

Electrical observation of deep traps in high-[kappa]/metal gate stack transistors

Demonstration of L \sim \hbox\ \hbox pMOSFETs With \hbox\hbox/\hbox Channels, High I/I\ (≫ \hbox \times \hbox^) , and Controlled Short Channel Effects (SCEs)

On Oxygen Deficiency and Fast Transient Charge-Trapping Effects in High-[Formula Omitted] Dielectrics

Band-Engineered Low PMOS VT with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme

Improved Ge Surface Passivation With Ultrathin \hbox Enabling High-Mobility Surface Channel pMOSFETs Featuring a HfSiO/WN Gate Stack

Adjusting to 3D devices in a 2D device world

Thermal response of Ru electrodes in contact with SiO{sub 2} and Hf-based high-k gate dielectrics

Mechanisms limiting EOT scaling and gate leakage currents of high-k/metal gate stacks directly on SiGe and a method to enable sub-1nm EOT

Systematic investigation of amorphous transition-metal-silicon-nitride electrodes for metal gate CMOS applications

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