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Multilevel HfO2-based RRAM devices for low-power neuromorphic networks

APL materials, 2019-08, Vol.7 (8), p.081120-081120-10

2019

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Plasma-enhanced chemical vapor deposition of amorphous Si on graphene

Applied physics letters, 2016-05, Vol.108 (19)

2016

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Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes

Journal of applied physics, 2017-06, Vol.121 (24)

2017

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Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

Journal of applied physics, 2009-06, Vol.105 (11)

2009

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Band alignment and electron traps in Y2O3 layers on (100)Si

Applied physics letters, 2009-09, Vol.95 (13)

2009

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High resolution spectroscopy and the first global analysis of the Tetradecad region of methane 12CH4

Physical chemistry chemical physics : PCCP, 2013, Vol.15 (25), p.10071-10093

2013

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Tutorial: Concepts for closely mimicking biological learning with memristive devices: Principles to emulate cellular forms of learning

Journal of applied physics, 2018-10, Vol.124 (15)

2018

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Reduction of the Cell-to-Cell Variability in Hf1-xAlxOy Based RRAM Arrays by Using Program Algorithms

IEEE electron device letters, 2017-02, Vol.38 (2), p.175-178

2017

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Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2−xO3 (x=0–2) dielectrics on TiN for dynamic random access memory applications

Journal of applied physics, 2007-07, Vol.102 (1)

2007

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On the epitaxy of twin-free cubic (111) praseodymium sesquioxide films on Si(111)

Journal of applied physics, 2006-01, Vol.99 (1)

2006

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Thin BaHfO3 high-k dielectric layers on TiN for memory capacitor applications

Applied physics letters, 2008-02, Vol.92 (6)

2008

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Self-calibrating highly sensitive dynamic capacitance sensor: towards rapid sensing and counting of particles in laminar flow systems

Analyst (London), 2015-05, Vol.14 (9), p.3262-3272

2015

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First investigation of metal–insulator–metal (MIM) capacitor using Pr2O3 dielectrics

Materials science in semiconductor processing, 2004-01, Vol.7 (4-6), p.227-230

2004

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Reduction of the Cell-to-Cell Variability in Hf 1-x Al x O y Based RRAM Arrays by Using Program Algorithms

IEEE electron device letters, 2017-02, Vol.38 (2), p.175-178

2017

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Label free sensing of creatinine using a 6 GHz CMOS near-field dielectric immunosensor

Analyst (London), 2015-05, Vol.14 (9), p.319-327

2015

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Performance Assessment of Amorphous HfO 2 -Based RRAM Devices for Neuromorphic Applications

ECS journal of solid state science and technology, 2021-08, Vol.10 (8), p.83002

2021

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Demonstration of a graphene-base heterojunction transistor with saturated output current

Journal of applied physics, 2019-06, Vol.125 (23)

2019

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HfO2, Sr-Ta-O and Ti-Ta-O High-k Dielectrics for Metal-Insulator-Metal Applications

Journal of the Electrochemical Society, 2011, Vol.158 (5), p.G119

2011

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Low-energy inference machine with multilevel HfO2 RRAM arrays

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), 2019, p.174-177

2019

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On the role of Ti adlayers for resistive switching in HfO2-based metal-insulator-metal structures: Top versus bottom electrode integration

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-01, Vol.29 (1), p.1

2011

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Microscopic model for the nonlinear behavior of high- k metal-insulator-metal capacitors

Journal of applied physics, 2008-05, Vol.103 (10), p.104103-104103-5

2008

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Reliability of CMOS Integrated Memristive HfO2 Arrays with Respect to Neuromorphic Computing

2019 IEEE International Reliability Physics Symposium (IRPS), 2019, p.1-4

2019

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High resolution spectroscopy and the first global analysis of the Tetradecad region of methane super(12)CH sub(4)

Physical chemistry chemical physics : PCCP, 2013-06, Vol.15 (25), p.10071-10093

2013

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Titanium-added praseodymium silicate high- k layers on Si(001)

Applied physics letters, 2005-07, Vol.87 (2), p.022902-022902-3

2005

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High resolution spectroscopy and the first global analysis of the Tetradecad region of methane 12CH4: Spectroscopy and dynamics of medium-sized molecules and clusters

Physical chemistry chemical physics : PCCP, 2013, Vol.15 (25), p.10071-10093

2013

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Multilevel HfO2-based RRAM devices for low-power neuromorphic networks

Plasma-enhanced chemical vapor deposition of amorphous Si on graphene

Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes

Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

Band alignment and electron traps in Y2O3 layers on (100)Si

High resolution spectroscopy and the first global analysis of the Tetradecad region of methane 12CH4

Tutorial: Concepts for closely mimicking biological learning with memristive devices: Principles to emulate cellular forms of learning

Reduction of the Cell-to-Cell Variability in Hf1-xAlxOy Based RRAM Arrays by Using Program Algorithms

Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2−xO3 (x=0–2) dielectrics on TiN for dynamic random access memory applications

On the epitaxy of twin-free cubic (111) praseodymium sesquioxide films on Si(111)

Thin BaHfO3 high-k dielectric layers on TiN for memory capacitor applications

Self-calibrating highly sensitive dynamic capacitance sensor: towards rapid sensing and counting of particles in laminar flow systems

First investigation of metal–insulator–metal (MIM) capacitor using Pr2O3 dielectrics

Reduction of the Cell-to-Cell Variability in Hf 1-x Al x O y Based RRAM Arrays by Using Program Algorithms

Label free sensing of creatinine using a 6 GHz CMOS near-field dielectric immunosensor

Performance Assessment of Amorphous HfO 2 -Based RRAM Devices for Neuromorphic Applications

Demonstration of a graphene-base heterojunction transistor with saturated output current

HfO2, Sr-Ta-O and Ti-Ta-O High-k Dielectrics for Metal-Insulator-Metal Applications

Low-energy inference machine with multilevel HfO2 RRAM arrays

On the role of Ti adlayers for resistive switching in HfO2-based metal-insulator-metal structures: Top versus bottom electrode integration

Microscopic model for the nonlinear behavior of high- k metal-insulator-metal capacitors

Reliability of CMOS Integrated Memristive HfO2 Arrays with Respect to Neuromorphic Computing

High resolution spectroscopy and the first global analysis of the Tetradecad region of methane super(12)CH sub(4)

Titanium-added praseodymium silicate high- k layers on Si(001)

High resolution spectroscopy and the first global analysis of the Tetradecad region of methane 12CH4: Spectroscopy and dynamics of medium-sized molecules and clusters

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