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Modeling and optimization of monolithic polycrystalline silicon resistors

IEEE transactions on electron devices, 1981-07, Vol.28 (7), p.818-830

1981

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cw laser anneal of polycrystalline silicon: Crystalline structure, electrical properties

Applied physics letters, 1978-10, Vol.33 (8), p.775-778

1978

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A conduction model for semiconductor-grain-boundary-semiconductor barriers in polycrystalline-silicon films

IEEE transactions on electron devices, 1983-02, Vol.30 (2), p.137-149

1983

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A quantitative model of the effect of grain size on the resistivity of polycrystalline silicon resistors

IEEE electron device letters, 1980-03, Vol.1 (3), p.38-41

1980

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A bridge circuit for the characterization of electrically programmable elements

IEEE journal of solid-state circuits, 1989-06, Vol.24 (3), p.839-841

1989

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The electrical properties of ion-implanted amorphous silicon programmable element in the unprogrammed state

IEEE transactions on electron devices, 1990-01, Vol.37 (1), p.159-167

1990

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IPEL-a novel ion-implanted electrically programmable element

IEEE electron device letters, 1989-05, Vol.10 (5), p.180-182

1989

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Scaling Limitations of Monolithic Polycrystalline-Silicon Resistors in VLSI Static RAM's and Logic

IEEE journal of solid-state circuits, 1982-04, Vol.17 (2), p.312-320

1982

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A new conduction model for polycrystalline silicon films

IEEE electron device letters, 1981-04, Vol.2 (4), p.95-98

1981

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Scaling limitations of monolithic polycrystalline-Silicon resistors in VLSI static RAM's and logic

IEEE transactions on electron devices, 1982-04, Vol.29 (4), p.682-690

1982

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WP-A1 monolithic polycrystalline silicon distributed RC devices

IEEE transactions on electron devices, 1978-11, Vol.25 (11), p.1357-1357

1978

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TA-A5 scaling and limits of monolithic polycrystalline silicon resistors

IEEE transactions on electron devices, 1980-11, Vol.27 (11), p.2184-2184

1980

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Systemic air embolism in experimental penetrating lung injuries

The Journal of thoracic and cardiovascular surgery, 1977-11, Vol.74 (5), p.766-773

1977

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Annealing of ion-implanted Si using a scanned CW laser system

Radiation effects, 1980-01, Vol.48 (1-4), p.195-201

1980

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Optimization of the Hydrazine‐Water Solution for Anisotropic Etching of Silicon in Integrated Circuit Technology

Journal of the Electrochemical Society, 1975-04, Vol.122 (4), p.545-552

1975

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The lectrical properties of ion-implanted amorphous silicon programmable element in the unprogrammed state

IEEE transactions on electron devices, 1990, Vol.37 (1), p.159-167

1990

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Corrections to "A quantitative model of the effect of grain size on the resistivity of polycrystalline silicon resistors"

IEEE electron device letters, 1980-09, Vol.1 (9), p.185-185

1980

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A monolithic power-spectrum centroid detector

1981 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1981, Vol.XXIV, p.164-165

1981

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Invited: Circuit scaling limits for ultra-large-scale integration

1981 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1981, Vol.XXIV, p.36-37

1981

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Optimization, performance and limitations of monolithic polycrystalline silicon distributed RC devices

1979 International Electron Devices Meeting, 1979, p.502-505

1979

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Corrections to "A new conduction model for polycrystalline silicon films"

IEEE electron device letters, 1981-07, Vol.2 (7), p.189-189

1981

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A new conduction model for polycrystalline silicon films

1980 International Electron Devices Meeting, 1980, p.833-834

1980

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A novel ion-implanted amorphous silicon programmable element

1987 International Electron Devices Meeting, 1987, p.194-197

1987

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Modeling and optimization of monolithic polycrystalline silicon resistors

cw laser anneal of polycrystalline silicon: Crystalline structure, electrical properties

A conduction model for semiconductor-grain-boundary-semiconductor barriers in polycrystalline-silicon films

A quantitative model of the effect of grain size on the resistivity of polycrystalline silicon resistors

A bridge circuit for the characterization of electrically programmable elements

The electrical properties of ion-implanted amorphous silicon programmable element in the unprogrammed state

IPEL-a novel ion-implanted electrically programmable element

Scaling Limitations of Monolithic Polycrystalline-Silicon Resistors in VLSI Static RAM's and Logic

A new conduction model for polycrystalline silicon films

Scaling limitations of monolithic polycrystalline-Silicon resistors in VLSI static RAM's and logic

WP-A1 monolithic polycrystalline silicon distributed RC devices

TA-A5 scaling and limits of monolithic polycrystalline silicon resistors

Systemic air embolism in experimental penetrating lung injuries

Annealing of ion-implanted Si using a scanned CW laser system

Optimization of the Hydrazine‐Water Solution for Anisotropic Etching of Silicon in Integrated Circuit Technology

The lectrical properties of ion-implanted amorphous silicon programmable element in the unprogrammed state

Corrections to "A quantitative model of the effect of grain size on the resistivity of polycrystalline silicon resistors"

A monolithic power-spectrum centroid detector

Invited: Circuit scaling limits for ultra-large-scale integration

Optimization, performance and limitations of monolithic polycrystalline silicon distributed RC devices

Corrections to "A new conduction model for polycrystalline silicon films"

A new conduction model for polycrystalline silicon films

A novel ion-implanted amorphous silicon programmable element

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