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(Na, Zr) and (Ca, Zr) Phosphate-Molybdates and Phosphate-Tungstates: II-Radiation Test and Hydrolytic Stability

Materials, 2023-01, Vol.16 (3), p.965

2023

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Quantitative SIMS depth profiling of Al in AlGaN/AlN/GaN HEMT structures with nanometer‐thin layers

Surface and interface analysis, 2017-02, Vol.49 (2), p.117-121

2017

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Novel microwave plasma-assisted CVD reactor for diamond delta doping

Physica status solidi. PSS-RRL. Rapid research letters, 2016-04, Vol.10 (4), p.324-327

2016

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Study of oxidation processes in Mo/Be multilayers

AIP advances, 2018-07, Vol.8 (7), p.075202-075202-12

2018

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Effect of the Chloropentafluoroethane Additive in Chlorine-Containing Plasma on the Etching Rate and Etching-Profile Characteristics of Gallium Arsenide

Semiconductors (Woodbury, N.Y.), 2021-11, Vol.55 (11), p.865-868

2021

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Pulsed Laser Irradiation of Light-Emitting Structures with a (Ga,Mn)As Layer

Physics of the solid state, 2021-11, Vol.63 (11), p.1593-1600

2021

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Formation of Ohmic Contacts to a Diamond-Like Carbon Layer Deposited on a Dielectric Diamond Substrate

Semiconductors (Woodbury, N.Y.), 2020-09, Vol.54 (9), p.1056-1058

2020

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Carbon Films Produced by the Pulsed Laser Method and Their Influence on the Properties of GaAs Structures

Semiconductors (Woodbury, N.Y.), 2020-09, Vol.54 (9), p.1059-1063

2020

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Influence of Annealing on the Properties of Ge:Sb/Si(001) Layers with an Antimony Concentration Above Its Equilibrium Solubility in Germanium

Semiconductors (Woodbury, N.Y.), 2019-07, Vol.53 (7), p.882-886

2019

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Formation of Carbon Layers by the Thermal Decomposition of Carbon Tetrachloride in a Reactor for MOCVD Epitaxy

Semiconductors (Woodbury, N.Y.), 2020-08, Vol.54 (8), p.956-960

2020

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Influence of Mo interlayers on the microstructure of layers and reflective characteristics of Ru/Be multilayer mirrors

Optics express, 2022-12, Vol.30 (26), p.46749-46761

2022

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All-epitaxial Al/AlGaN/GaN low-barrier Schottky diodes

Applied physics letters, 2022-12, Vol.121 (23)

2022

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SiV center electroluminescence in high current density diamond p-i-n diode

Applied physics letters, 2023-12, Vol.123 (25)

2023

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Low-barrier Mott diodes with near-surface polarization-induced δ-doping

Applied physics letters, 2020-01, Vol.116 (1)

2020

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Microwave microscopy of diamond semiconductor structures

Journal of applied physics, 2017-04, Vol.121 (16)

2017

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Thin film multilayer filters for solar EUV telescopes

Applied Optics, 2016-06, Vol.55 (17), p.4683

2016

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Plasma Chemical Deposition of Hydrogenated DLC Films with Different Hydrogen and sp3-Hybrid Carbon Content

Semiconductors (Woodbury, N.Y.), 2024, Vol.58 (1), p.57-60

2024

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Effect of antimony doping on the energy of optical transitions in n-Ge layers grown on Si (001) and Ge (001) substrates

Journal of applied physics, 2020-04, Vol.127 (16)

2020

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TOF-SIMS for carbon hybridization state analysis

Carbon (New York), 2022-01, Vol.186, p.83-90

2022

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Secondary-Ion Mass Spectroscopy for Analysis of the Implanted Hydrogen Profile in Silicon and Impurity Composition of Silicon-on-Insulator Structures

Technical physics, 2020-11, Vol.65 (11), p.1767-1770

2020

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The isotopic composition of enriched Si: a data analysis

Metrologia, 2011-04, Vol.48 (2), p.S32-S36

2011

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Influence of CVD diamond growth conditions on nitrogen incorporation

Diamond and related materials, 2017-02, Vol.72, p.1-6

2017

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Synthesis of thick and high-quality homoepitaxial diamond with high boron doping level: Oxygen effect

Diamond and related materials, 2017-04, Vol.74, p.59-64

2017

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A New Approach to TOF-SIMS Analysis of the Phase Composition of Carbon-Containing Materials

Technical physics letters, 2019, Vol.45 (1), p.48-52

2019

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Magnetic Skyrmions in Thickness-Modulated Films

JETP letters, 2018-03, Vol.107 (6), p.364-368

2018

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(Na, Zr) and (Ca, Zr) Phosphate-Molybdates and Phosphate-Tungstates: II-Radiation Test and Hydrolytic Stability

Quantitative SIMS depth profiling of Al in AlGaN/AlN/GaN HEMT structures with nanometer‐thin layers

Novel microwave plasma-assisted CVD reactor for diamond delta doping

Study of oxidation processes in Mo/Be multilayers

Effect of the Chloropentafluoroethane Additive in Chlorine-Containing Plasma on the Etching Rate and Etching-Profile Characteristics of Gallium Arsenide

Pulsed Laser Irradiation of Light-Emitting Structures with a (Ga,Mn)As Layer

Formation of Ohmic Contacts to a Diamond-Like Carbon Layer Deposited on a Dielectric Diamond Substrate

Carbon Films Produced by the Pulsed Laser Method and Their Influence on the Properties of GaAs Structures

Influence of Annealing on the Properties of Ge:Sb/Si(001) Layers with an Antimony Concentration Above Its Equilibrium Solubility in Germanium

Formation of Carbon Layers by the Thermal Decomposition of Carbon Tetrachloride in a Reactor for MOCVD Epitaxy

Influence of Mo interlayers on the microstructure of layers and reflective characteristics of Ru/Be multilayer mirrors

All-epitaxial Al/AlGaN/GaN low-barrier Schottky diodes

SiV center electroluminescence in high current density diamond p-i-n diode

Low-barrier Mott diodes with near-surface polarization-induced δ-doping

Microwave microscopy of diamond semiconductor structures

Thin film multilayer filters for solar EUV telescopes

Plasma Chemical Deposition of Hydrogenated DLC Films with Different Hydrogen and sp3-Hybrid Carbon Content

Effect of antimony doping on the energy of optical transitions in n-Ge layers grown on Si (001) and Ge (001) substrates

TOF-SIMS for carbon hybridization state analysis

Secondary-Ion Mass Spectroscopy for Analysis of the Implanted Hydrogen Profile in Silicon and Impurity Composition of Silicon-on-Insulator Structures

The isotopic composition of enriched Si: a data analysis

Influence of CVD diamond growth conditions on nitrogen incorporation

Synthesis of thick and high-quality homoepitaxial diamond with high boron doping level: Oxygen effect

A New Approach to TOF-SIMS Analysis of the Phase Composition of Carbon-Containing Materials

Magnetic Skyrmions in Thickness-Modulated Films

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