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Nature of native oxide on GaN surface and its reaction with Al

Applied physics letters, 1996-11, Vol.69 (21), p.3212-3214

1996

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Influence of Al ∕ N flux ratio during nucleation layer growth on the structural properties of AlN grown on sapphire by molecular beam epitaxy

Applied physics letters, 2005-10, Vol.87 (16), p.161901-161901-3

2005

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Preparation and characterization of the ITO surface and the Al/Alq3/ITO heterostructure for OLEDs

Materials science & engineering. B, Solid-state materials for advanced technology, 2007-12, Vol.145 (1-3), p.48-56

2007

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Macroscopic defects in GaN/AlN multiple quantum well structures grown by MBE on GaN templates

Microelectronics, 2009-02, Vol.40 (2), p.360-362

2009

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Effect of AlN nucleation layer on the structural properties of bulk GaN grown on sapphire by molecular-beam epitaxy

Journal of applied physics, 2005-07, Vol.98 (1), p.016109-016109-3

2005

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Preparation and characterization of the ITO surface and the Al/Alq 3/ITO heterostructure for OLEDs

Materials science & engineering. B, Solid-state materials for advanced technology, 2007, Vol.145 (1), p.48-56

2007

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Intersubband absorption at 1.5-3.5 µm in GaN/AlN multiple quantum wells grown by molecular beam epitaxy on sapphire

Physica status solidi, 2007, Vol.244 (8), p.2892

2007

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Cracks in GaN/AlN multiple quantum well structures grown by MBE

17th Int. Vacuum Congress and 13th Int. Conf. on Surface Science, Stockholm, Sweden, 2008-03, Vol.100 (4), p.042026

2008

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Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission

Physical review. B, Condensed matter, 1995-09, Vol.52 (12), p.R8643-R8645

1995

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Study of Alq 3 thermal evaporation rate effects on the OLED

Materials science & engineering. B, Solid-state materials for advanced technology, 2004, Vol.112 (1), p.14-18

2004

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Molecular Beam Epitaxy Growth and Characterisation of GaAs1-xNxLayers

Materials science forum, 1998-02, Vol.264-268, p.1185-1188

1998

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DC and RF performance of 0.15 µm gate length In0.70Al0.30As/In0.80Ga0.20As HFETs on GaAs substrate

Electronics letters, 1995-07, Vol.31 (15), p.1292-1294

1995

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Optical characterization of MBE-grown GaNAs

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-12, Vol.50 (1), p.153-156

1997

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Carrier recombination in a periodically δ-doped multiple quantum well structure

IEEE journal of quantum electronics, 1994, Vol.30 (1), p.63-74

1994

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A multiple-state memory cell based on the resonant tunneling diode

IEEE electron device letters, 1988-05, Vol.9 (5), p.200-202

1988

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Large Stark shift of the interband transition in two-step quantum wells

IEEE electron device letters, 1993-06, Vol.14 (6), p.286-288

1993

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Surface Morphology and Structure of GaN x As 1−x

MRS Internet journal of nitride semiconductor research, 1997, Vol.2, Article e8

1997

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Carrier recombination in a periodically /spl delta/-doped multiple quantum well structure

IEEE journal of quantum electronics, 1994-01, Vol.30 (1), p.63-74

1994

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Interfacial Microstructure of InxGa1-xAs/GaAs Strained Layers

Materials science forum, 1995-01, Vol.189-190, p.285-290

1995

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Influence of Al Doping on Deep Levels in MBE GaAs

Materials science forum, 1995-01, Vol.196-201, p.1767-1772

1995

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Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio

MRS Internet journal of nitride semiconductor research, 1998, Vol.3, Article e14

1998

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On the carrier lifetime in periodically delta -doped GaAs

Semiconductor science and technology, 1994-12, Vol.9 (12), p.2190-2194

1994

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Transport Properties of Silicon δ-Doped Gaas in High Electron Density Regime

Acta physica Polonica, A, 1997-10, Vol.92 (4), p.727-732

1997

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Influence of the Cap Layer Thickness on the Interface Quality in In0.2Ga0.8As/GaAs Single Quantum Wells

Control of Semiconductor Interfaces, 1994, p.501-505

1994

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Optical Properties of GaNAs Grown by MBE

MRS Internet journal of nitride semiconductor research, 1998, Vol.3, Article e29

1998

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Nature of native oxide on GaN surface and its reaction with Al

Influence of Al ∕ N flux ratio during nucleation layer growth on the structural properties of AlN grown on sapphire by molecular beam epitaxy

Preparation and characterization of the ITO surface and the Al/Alq3/ITO heterostructure for OLEDs

Macroscopic defects in GaN/AlN multiple quantum well structures grown by MBE on GaN templates

Effect of AlN nucleation layer on the structural properties of bulk GaN grown on sapphire by molecular-beam epitaxy

Preparation and characterization of the ITO surface and the Al/Alq 3/ITO heterostructure for OLEDs

Intersubband absorption at 1.5-3.5 µm in GaN/AlN multiple quantum wells grown by molecular beam epitaxy on sapphire

Cracks in GaN/AlN multiple quantum well structures grown by MBE

Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission

Study of Alq 3 thermal evaporation rate effects on the OLED

Molecular Beam Epitaxy Growth and Characterisation of GaAs1-xNxLayers

DC and RF performance of 0.15 µm gate length In0.70Al0.30As/In0.80Ga0.20As HFETs on GaAs substrate

Optical characterization of MBE-grown GaNAs

Carrier recombination in a periodically δ-doped multiple quantum well structure

A multiple-state memory cell based on the resonant tunneling diode

Large Stark shift of the interband transition in two-step quantum wells

Surface Morphology and Structure of GaN x As 1−x

Carrier recombination in a periodically /spl delta/-doped multiple quantum well structure

Interfacial Microstructure of InxGa1-xAs/GaAs Strained Layers

Influence of Al Doping on Deep Levels in MBE GaAs

Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio

On the carrier lifetime in periodically delta -doped GaAs

Transport Properties of Silicon δ-Doped Gaas in High Electron Density Regime

Influence of the Cap Layer Thickness on the Interface Quality in In0.2Ga0.8As/GaAs Single Quantum Wells

Optical Properties of GaNAs Grown by MBE

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