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Effective control of the charge and magnetic states of transition-metal atoms on single-layer boron nitride

Physical review letters, 2012-05, Vol.108 (20), p.206802-206802, Article 206802

2012

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Towards direct-gap silicon phases by the inverse band structure design approach

Physical review letters, 2013-03, Vol.110 (11), p.118702-118702, Article 118702

2013

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Overcoming the phase inhomogeneity in chemically functionalized graphene: the case of graphene oxides

Physical review letters, 2013-02, Vol.110 (8), p.085501-085501, Article 085501

2013

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Comment on “Mechanisms of Postsynthesis Doping of Boron Nitride Nanostructures with Carbon from First-Principles Simulations”

Physical review letters, 2011-11, Vol.107 (23)

2011

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Comment on “Secure multiparty computation with a dishonest majority via quantum means”

Physical review. A, Atomic, molecular, and optical physics, 2011-07, Vol.84 (1), Article 016301

2011

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Effective control of the charge and magnetic states of transition-metal atoms on single-layer boron nitride

Towards direct-gap silicon phases by the inverse band structure design approach

Overcoming the phase inhomogeneity in chemically functionalized graphene: the case of graphene oxides

Comment on “Mechanisms of Postsynthesis Doping of Boron Nitride Nanostructures with Carbon from First-Principles Simulations”

Comment on “Secure multiparty computation with a dishonest majority via quantum means”

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