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A 0.01-to-2.6-GHz Two-Fold Current Reuse Dual Noise-Canceling LNA Achieving 6.8-K Noise Temperature for Quantum Applications

IEEE transactions on circuits and systems. II, Express briefs, 2024, Vol.71 (5), p.2504-2508

2024

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IEEE_Xplore

A 0.016 mm ^ , 2.4 GHz RF Signal Quality Measurement Macro for RF Test and Diagnosis

IEEE journal of solid-state circuits, 2008-04, Vol.43 (4), p.1038-1046

2008

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IEEE_Xplore

A 0.02-to-6GHz SDR balun-LNA using a triple-stage inverter-based amplifier

2012 IEEE International Symposium on Circuits and Systems (ISCAS), 2012, p.472-475

2012

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IEEE_Xplore

A 0.03-3GHz Wideband Inductorless Receiver in 65nm CMOS

2021 4th International Conference on Circuits, Systems and Simulation (ICCSS), 2021, p.11-17

2021

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A 0.038-mm2 SAW-Less Multiband Transceiver Using an N-Path SC Gain Loop

IEEE journal of solid-state circuits, 2017-08, Vol.52 (8), p.2055-2070

2017

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IEEE_Xplore

A 0.044-mm2 0.5-to-7-GHz Resistor-Plus-Source-Follower-Feedback Noise-Cancelling LNA Achieving a Flat NF of 3.3±0.45 dB

IEEE transactions on circuits and systems. II, Express briefs, 2019-01, Vol.66 (1), p.71-75

2019

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IEEE_Xplore

A 0.08-cc fully integrated LTCC transceiver front-end module for 5-GHz wireless LAN systems

Radio and Wireless Conference, 2003. RAWCON '03. Proceedings, 2003, p.357-360

2003

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IEEE_Xplore

A 0.1–2.75 GHz high-linear low-noise transconductance amplifier for high-performance multi-standard wireless applications

Microsystem technologies : sensors, actuators, systems integration, 2020-07, Vol.26 (7), p.2279-2293

2020

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A 0.1-8.5 GHz wideband CMOS LNA using forward body bias technology for SDR applications

2012 International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2012, Vol.3, p.1-4

2012

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IEEE_Xplore

A 0.1 /spl mu/m W-band HEMT production process for high yield and high performance low noise and power MMICs

Proceedings of 1994 IEEE GaAs IC Symposium, 1994, p.325-328

1994

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IEEE_Xplore

A 0.13-μm CMOS Ultra-Low Power Front-End Receiver for Wireless Sensor Networks

2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2007, p.105-108

2007

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IEEE_Xplore

A 0.13 /spl mu/m CMOS front-end for DCS1800/UMTS/802.11b-g with multi-band positive feedback low noise amplifier

Digest of Technical Papers. 2005 Symposium on VLSI Circuits, 2005, 2005, p.406-409

2005

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IEEE_Xplore

A 0.13 /spl mu/m CMOS front-end, for DCS1800/UMTS/802.11b-g with multiband positive feedback low-noise amplifier

IEEE journal of solid-state circuits, 2006-04, Vol.41 (4), p.981-989

2006

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IEEE_Xplore

0.13/spl mu/m low voltage logic based RF CMOS technology with 115GHz f/sub T/ and 80GHz f/sub MAX

33rd European Microwave Conference Proceedings (IEEE Cat. No.03EX723C), 2003, Vol.2, p.683-686 vol.2

2003

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IEEE_Xplore

A 0.13-µm CMOS multi-band WCDMA/HSDPA receiver adopting silicon area reducing techniques

2009 IEEE Radio Frequency Integrated Circuits Symposium, 2009, p.17-20

2009

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IEEE_Xplore

0.13 μm Low Voltage Logic Based RF CMOS Technology with 115GHz fT and 80GHz fMAX

2003 33rd European Microwave Conference, 2003, p.683-686

2003

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IEEE_Xplore

A 0.13μm CMOS UWB receiver front-end using passive mixer

APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems, 2008, p.288-291

2008

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IEEE_Xplore

A 0.14- }^ 1.4-mW 59.4-dB-SFDR 2.4-GHz ZigBee/WPAN Receiver Exploiting a "Split-LNTA + 50% LO" Topology in 65-nm CMOS

IEEE transactions on microwave theory and techniques, 2014-07, Vol.62 (7), p.1525-1534

2014

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IEEE_Xplore

A 0.15 /spl mu/m/0.6 dB-NF/sub min/ RF BiCMOS technology using cobalt silicide ground shields

Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124), 2000, p.98-101

2000

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IEEE_Xplore

A 0.15-/spl mu/m/73-GHz f/sub max/ RF BiCMOS technology using cobalt silicide ring extrinsic-base structure

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325), 1999, p.149-150

1999

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IEEE_Xplore

0.15-μm RF CMOS technology compatible with logic CMOS for low-voltage operation

IEEE transactions on electron devices, 1998-03, Vol.45 (3), p.737-742

1998

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A 0.18- \mu} Dual-Gate CMOS Device Modeling and Applications for RF Cascode Circuits

IEEE transactions on microwave theory and techniques, 2011-01, Vol.59 (1), p.116-124

2011

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IEEE_Xplore

A 0.18- \mu m CMOS RF Transceiver With Self-Detection and Calibration Functions for Bluetooth V2.1 EDR Applications

IEEE transactions on microwave theory and techniques, 2010-05, Vol.58 (5), p.1367-1374

2010

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IEEE_Xplore

A 0.18-μm CMOS UWB Low Noise Amplifier for Full-Band (3.1-10.6GHz) Application

APCCAS 2006 - 2006 IEEE Asia Pacific Conference on Circuits and Systems, 2006, p.363-366

2006

Link zum Volltext
IEEE_Xplore

A 0.18/spl mu/m CMOS direct-conversion receiver front-end for UMTS

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315), 2002, Vol.2, p.192-468

2002

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IEEE_Xplore

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A 0.01-to-2.6-GHz Two-Fold Current Reuse Dual Noise-Canceling LNA Achieving 6.8-K Noise Temperature for Quantum Applications

A 0.016 mm ^ , 2.4 GHz RF Signal Quality Measurement Macro for RF Test and Diagnosis

A 0.02-to-6GHz SDR balun-LNA using a triple-stage inverter-based amplifier

A 0.03-3GHz Wideband Inductorless Receiver in 65nm CMOS

A 0.038-mm2 SAW-Less Multiband Transceiver Using an N-Path SC Gain Loop

A 0.044-mm2 0.5-to-7-GHz Resistor-Plus-Source-Follower-Feedback Noise-Cancelling LNA Achieving a Flat NF of 3.3±0.45 dB

A 0.08-cc fully integrated LTCC transceiver front-end module for 5-GHz wireless LAN systems

A 0.1–2.75 GHz high-linear low-noise transconductance amplifier for high-performance multi-standard wireless applications

A 0.1-8.5 GHz wideband CMOS LNA using forward body bias technology for SDR applications

A 0.1 /spl mu/m W-band HEMT production process for high yield and high performance low noise and power MMICs

A 0.13-μm CMOS Ultra-Low Power Front-End Receiver for Wireless Sensor Networks

A 0.13 /spl mu/m CMOS front-end for DCS1800/UMTS/802.11b-g with multi-band positive feedback low noise amplifier

A 0.13 /spl mu/m CMOS front-end, for DCS1800/UMTS/802.11b-g with multiband positive feedback low-noise amplifier

0.13/spl mu/m low voltage logic based RF CMOS technology with 115GHz f/sub T/ and 80GHz f/sub MAX

A 0.13-µm CMOS multi-band WCDMA/HSDPA receiver adopting silicon area reducing techniques

0.13 μm Low Voltage Logic Based RF CMOS Technology with 115GHz fT and 80GHz fMAX

A 0.13μm CMOS UWB receiver front-end using passive mixer

A 0.14- }^ 1.4-mW 59.4-dB-SFDR 2.4-GHz ZigBee/WPAN Receiver Exploiting a "Split-LNTA + 50% LO" Topology in 65-nm CMOS

A 0.15 /spl mu/m/0.6 dB-NF/sub min/ RF BiCMOS technology using cobalt silicide ground shields

A 0.15-/spl mu/m/73-GHz f/sub max/ RF BiCMOS technology using cobalt silicide ring extrinsic-base structure

0.15-μm RF CMOS technology compatible with logic CMOS for low-voltage operation

A 0.18- \mu} Dual-Gate CMOS Device Modeling and Applications for RF Cascode Circuits

A 0.18- \mu m CMOS RF Transceiver With Self-Detection and Calibration Functions for Bluetooth V2.1 EDR Applications

A 0.18-μm CMOS UWB Low Noise Amplifier for Full-Band (3.1-10.6GHz) Application

A 0.18/spl mu/m CMOS direct-conversion receiver front-end for UMTS

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