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A 0.038-mm2 SAW-Less Multiband Transceiver Using an N-Path SC Gain Loop

IEEE journal of solid-state circuits, 2017-08, Vol.52 (8), p.2055-2070

2017

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A 0.044-mm2 0.5-to-7-GHz Resistor-Plus-Source-Follower-Feedback Noise-Cancelling LNA Achieving a Flat NF of 3.3±0.45 dB

IEEE transactions on circuits and systems. II, Express briefs, 2019-01, Vol.66 (1), p.71-75

2019

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A 0.13-μm CMOS Ultra-Low Power Front-End Receiver for Wireless Sensor Networks

2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2007, p.105-108

2007

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A 0.13 /spl mu/m CMOS front-end for DCS1800/UMTS/802.11b-g with multi-band positive feedback low noise amplifier

Digest of Technical Papers. 2005 Symposium on VLSI Circuits, 2005, 2005, p.406-409

2005

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A 0.13 /spl mu/m CMOS front-end, for DCS1800/UMTS/802.11b-g with multiband positive feedback low-noise amplifier

IEEE journal of solid-state circuits, 2006-04, Vol.41 (4), p.981-989

2006

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A 0.15 /spl mu/m/0.6 dB-NF/sub min/ RF BiCMOS technology using cobalt silicide ground shields

Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124), 2000, p.98-101

2000

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A 0.15-/spl mu/m/73-GHz f/sub max/ RF BiCMOS technology using cobalt silicide ring extrinsic-base structure

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325), 1999, p.149-150

1999

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A 0.18- \mu m CMOS RF Transceiver With Self-Detection and Calibration Functions for Bluetooth V2.1 EDR Applications

IEEE transactions on microwave theory and techniques, 2010-05, Vol.58 (5), p.1367-1374

2010

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A 0.18/spl mu/m CMOS direct-conversion receiver front-end for UMTS

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315), 2002, Vol.2, p.192-468

2002

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A 0.18 /spl mu/m CMOS direct-conversion receiver front-end for UMTS

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315), 2002, Vol.1, p.240-463 vol.1

2002

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A 0.18 /spl mu/m foundry RF CMOS technology with 70 GHz F/sub t/ for single chip system solutions

2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157), 2001, Vol.3, p.1869-1872 vol.3

2001

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0.18 μm CMOS low noise amplifier for 3-5 GHz ultra-wideband system

2007 International Symposium on Integrated Circuits, 2007, p.100-103

2007

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0.18 μm CMOS RF front-end chipset for FM-UWB based P-PAN receivers

Norchip 2007, 2007, p.1-4

2007

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A 0.18 μm CMOS Ultra-Wideband Low-Noise Amplifier with High IIP3

2005 Conference on High Density Microsystem Design and Packaging and Component Failure Analysis, 2005, p.1-3

2005

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A 0.18um 3.3mW double-balanced CMOS active mixer

2007 7th International Conference on ASIC, 2007, p.419-422

2007

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0.18um CMOS receiver front-end for non-invasive cardiopulmonary monitoring

2008 Asia-Pacific Microwave Conference, 2008, p.1-4

2008

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A 0.18um CMOS Using High-Q Active Inductors for Multi-band Low Noise Amplifier

2007 IEEE Conference on Electron Devices and Solid-State Circuits, 2007, p.1001-1004

2007

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A 0.2-2 GHz Time-Interleaved Multi-Stage Switched-Capacitor Delay Element Achieving 448.6 ns Delay and 330 ns/mm2 Area Efficiency

2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2022, p.135-138

2022

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0.2 /spl mu/m analog CMOS with very low noise figure at 2 GHz operation

1996 Symposium on VLSI Technology. Digest of Technical Papers, 1996, p.132-133

1996

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A 0.25 /spl mu/m CMOS transceiver front-end for GSM

Proceedings of the IEEE 1998 Custom Integrated Circuits Conference (Cat. No.98CH36143), 1998, p.413-416

1998

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A 0.25 µm CMOS I/Q-channel downconversion mixer with active coil for DCS-1800 applications

Proceedings of the 24th European Solid-State Circuits Conference, 1998, p.56-59

1998

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A 0.25μm CMOS Downconverter Mixer for 1.6GHz

TENCON 2006 - 2006 IEEE Region 10 Conference, 2006, p.1-4

2006

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A 0.3-7.7GHz Noise-Canceling Low-Noise Amplifier in 55nm CMOS

2023 IEEE MTT-S International Wireless Symposium (IWS), 2023, p.1-4

2023

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A 0.4-6 GHz Receiver for LTE and WiFi

2021 Symposium on VLSI Circuits, 2021, p.1-2

2021

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A 0.4-V Low Noise Amplifier Using Forward Body Bias Technology for 5 GHz Application

IEEE microwave and wireless components letters, 2007-07, Vol.17 (7), p.543-545

2007

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A 0.038-mm2 SAW-Less Multiband Transceiver Using an N-Path SC Gain Loop

A 0.044-mm2 0.5-to-7-GHz Resistor-Plus-Source-Follower-Feedback Noise-Cancelling LNA Achieving a Flat NF of 3.3±0.45 dB

A 0.13-μm CMOS Ultra-Low Power Front-End Receiver for Wireless Sensor Networks

A 0.13 /spl mu/m CMOS front-end for DCS1800/UMTS/802.11b-g with multi-band positive feedback low noise amplifier

A 0.13 /spl mu/m CMOS front-end, for DCS1800/UMTS/802.11b-g with multiband positive feedback low-noise amplifier

A 0.15 /spl mu/m/0.6 dB-NF/sub min/ RF BiCMOS technology using cobalt silicide ground shields

A 0.15-/spl mu/m/73-GHz f/sub max/ RF BiCMOS technology using cobalt silicide ring extrinsic-base structure

A 0.18- \mu m CMOS RF Transceiver With Self-Detection and Calibration Functions for Bluetooth V2.1 EDR Applications

A 0.18/spl mu/m CMOS direct-conversion receiver front-end for UMTS

A 0.18 /spl mu/m CMOS direct-conversion receiver front-end for UMTS

A 0.18 /spl mu/m foundry RF CMOS technology with 70 GHz F/sub t/ for single chip system solutions

0.18 μm CMOS low noise amplifier for 3-5 GHz ultra-wideband system

0.18 μm CMOS RF front-end chipset for FM-UWB based P-PAN receivers

A 0.18 μm CMOS Ultra-Wideband Low-Noise Amplifier with High IIP3

A 0.18um 3.3mW double-balanced CMOS active mixer

0.18um CMOS receiver front-end for non-invasive cardiopulmonary monitoring

A 0.18um CMOS Using High-Q Active Inductors for Multi-band Low Noise Amplifier

A 0.2-2 GHz Time-Interleaved Multi-Stage Switched-Capacitor Delay Element Achieving 448.6 ns Delay and 330 ns/mm2 Area Efficiency

0.2 /spl mu/m analog CMOS with very low noise figure at 2 GHz operation

A 0.25 /spl mu/m CMOS transceiver front-end for GSM

A 0.25 µm CMOS I/Q-channel downconversion mixer with active coil for DCS-1800 applications

A 0.25μm CMOS Downconverter Mixer for 1.6GHz

A 0.3-7.7GHz Noise-Canceling Low-Noise Amplifier in 55nm CMOS

A 0.4-6 GHz Receiver for LTE and WiFi

A 0.4-V Low Noise Amplifier Using Forward Body Bias Technology for 5 GHz Application

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