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A 0.007 mm2, 0.1-4 GHz SDR RF Front-End for Wireless Sensor Networks in 65nm CMOS

2024 IEEE International Conference on IC Design and Technology (ICICDT), 2024, p.1-4

2024

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A 0.016 mm ^ , 2.4 GHz RF Signal Quality Measurement Macro for RF Test and Diagnosis

IEEE journal of solid-state circuits, 2008-04, Vol.43 (4), p.1038-1046

2008

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A 0.02-to-6GHz SDR balun-LNA using a triple-stage inverter-based amplifier

2012 IEEE International Symposium on Circuits and Systems (ISCAS), 2012, p.472-475

2012

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0.05-2.5GHz wideband RF front-end exploiting noise cancellation and multi-gated transistors

2015 Asia-Pacific Microwave Conference (APMC), 2015, Vol.2, p.1-3

2015

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A 0.079 mm 2 2.1-to-4.2 GHz ring-VCO employing programmable current topology

Microelectronics international, 2018-05, Vol.35 (2), p.85-91

2018

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A 0.08-cc fully integrated LTCC transceiver front-end module for 5-GHz wireless LAN systems

Radio and Wireless Conference, 2003. RAWCON '03. Proceedings, 2003, p.357-360

2003

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A 0.1–2.75 GHz high-linear low-noise transconductance amplifier for high-performance multi-standard wireless applications

Microsystem technologies : sensors, actuators, systems integration, 2020-07, Vol.26 (7), p.2279-2293

2020

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A 0.1-8.5 GHz wideband CMOS LNA using forward body bias technology for SDR applications

2012 International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2012, Vol.3, p.1-4

2012

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A 0.1 /spl mu/m W-band HEMT production process for high yield and high performance low noise and power MMICs

Proceedings of 1994 IEEE GaAs IC Symposium, 1994, p.325-328

1994

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A 0.13-μm CMOS Ultra-Low Power Front-End Receiver for Wireless Sensor Networks

2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2007, p.105-108

2007

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A 0.13 /spl mu/m CMOS front-end for DCS1800/UMTS/802.11b-g with multi-band positive feedback low noise amplifier

Digest of Technical Papers. 2005 Symposium on VLSI Circuits, 2005, 2005, p.406-409

2005

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0.13/spl mu/m low voltage logic based RF CMOS technology with 115GHz f/sub T/ and 80GHz f/sub MAX

33rd European Microwave Conference Proceedings (IEEE Cat. No.03EX723C), 2003, Vol.2, p.683-686 vol.2

2003

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0.13 μm Low Voltage Logic Based RF CMOS Technology with 115GHz fT and 80GHz fMAX

2003 33rd European Microwave Conference, 2003, p.683-686

2003

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A 0.13μm CMOS UWB receiver front-end using passive mixer

APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems, 2008, p.288-291

2008

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A 0.15 /spl mu/m/0.6 dB-NF/sub min/ RF BiCMOS technology using cobalt silicide ground shields

Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124), 2000, p.98-101

2000

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A 0.15-/spl mu/m/73-GHz f/sub max/ RF BiCMOS technology using cobalt silicide ring extrinsic-base structure

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325), 1999, p.149-150

1999

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0.15-μm RF CMOS technology compatible with logic CMOS for low-voltage operation

IEEE transactions on electron devices, 1998-03, Vol.45 (3), p.737-742

1998

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A 0.18-μm CMOS UWB Low Noise Amplifier for Full-Band (3.1-10.6GHz) Application

APCCAS 2006 - 2006 IEEE Asia Pacific Conference on Circuits and Systems, 2006, p.363-366

2006

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A 0.18 /spl mu/m CMOS direct-conversion receiver front-end for UMTS

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315), 2002, Vol.1, p.240-463 vol.1

2002

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A 0.18/spl mu/m CMOS direct-conversion receiver front-end for UMTS

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315), 2002, Vol.2, p.192-468

2002

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A 0.18/spl mu/m CMOS Dual-Band Direct-Conversion DVB-H Receiver

2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers, 2006, p.2494-2503

2006

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0.18 /spl mu/m CMOS sub-harmonic mixer for 2.4 GHz IEEE802.15.4 transceiver

2004 14th International Crimean Conference "Microwave and Telecommunication Technology" (IEEE Cat. No.04EX843), 2004, p.141-142

2004

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A 0.18 /spl mu/m foundry RF CMOS technology with 70 GHz F/sub t/ for single chip system solutions

2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157), 2001, Vol.3, p.1869-1872 vol.3

2001

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0.18/spl mu/m thin oxide CMOS transceiver front-end with integrated T/sub x//R/sub x/ commutator for low cost Bluetooth solutions

ESSCIRC 2004 - 29th European Solid-State Circuits Conference (IEEE Cat. No.03EX705), 2003, p.675-678

2003

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0.18 μm CMOS low noise amplifier for 3-5 GHz ultra-wideband system

2007 International Symposium on Integrated Circuits, 2007, p.100-103

2007

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A 0.007 mm2, 0.1-4 GHz SDR RF Front-End for Wireless Sensor Networks in 65nm CMOS

A 0.016 mm ^ , 2.4 GHz RF Signal Quality Measurement Macro for RF Test and Diagnosis

A 0.02-to-6GHz SDR balun-LNA using a triple-stage inverter-based amplifier

0.05-2.5GHz wideband RF front-end exploiting noise cancellation and multi-gated transistors

A 0.079 mm 2 2.1-to-4.2 GHz ring-VCO employing programmable current topology

A 0.08-cc fully integrated LTCC transceiver front-end module for 5-GHz wireless LAN systems

A 0.1–2.75 GHz high-linear low-noise transconductance amplifier for high-performance multi-standard wireless applications

A 0.1-8.5 GHz wideband CMOS LNA using forward body bias technology for SDR applications

A 0.1 /spl mu/m W-band HEMT production process for high yield and high performance low noise and power MMICs

A 0.13-μm CMOS Ultra-Low Power Front-End Receiver for Wireless Sensor Networks

A 0.13 /spl mu/m CMOS front-end for DCS1800/UMTS/802.11b-g with multi-band positive feedback low noise amplifier

0.13/spl mu/m low voltage logic based RF CMOS technology with 115GHz f/sub T/ and 80GHz f/sub MAX

0.13 μm Low Voltage Logic Based RF CMOS Technology with 115GHz fT and 80GHz fMAX

A 0.13μm CMOS UWB receiver front-end using passive mixer

A 0.15 /spl mu/m/0.6 dB-NF/sub min/ RF BiCMOS technology using cobalt silicide ground shields

A 0.15-/spl mu/m/73-GHz f/sub max/ RF BiCMOS technology using cobalt silicide ring extrinsic-base structure

0.15-μm RF CMOS technology compatible with logic CMOS for low-voltage operation

A 0.18-μm CMOS UWB Low Noise Amplifier for Full-Band (3.1-10.6GHz) Application

A 0.18 /spl mu/m CMOS direct-conversion receiver front-end for UMTS

A 0.18/spl mu/m CMOS direct-conversion receiver front-end for UMTS

A 0.18/spl mu/m CMOS Dual-Band Direct-Conversion DVB-H Receiver

0.18 /spl mu/m CMOS sub-harmonic mixer for 2.4 GHz IEEE802.15.4 transceiver

A 0.18 /spl mu/m foundry RF CMOS technology with 70 GHz F/sub t/ for single chip system solutions

0.18/spl mu/m thin oxide CMOS transceiver front-end with integrated T/sub x//R/sub x/ commutator for low cost Bluetooth solutions

0.18 μm CMOS low noise amplifier for 3-5 GHz ultra-wideband system

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