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Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure

Semiconductors (Woodbury, N.Y.), 2017-10, Vol.51 (10), p.1364-1369

2017

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Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (13), p.1696-1703

2018

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The regularities of phase formation in Fe3Si(111)/Si(111) structure at vacuum annealing

Journal of physics. Conference series, 2017-05, Vol.857 (1)

2017

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Raman investigation of the electron-phonon interaction in n-type silicon nanocrystals

Physics of the solid state, 2008-05, Vol.50 (5), p.962-965

2008

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Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films

Semiconductors (Woodbury, N.Y.), 2017-09, Vol.51 (9), p.1240-1246

2017

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Ge nanocrystals formed by furnace annealing of Ge(x)[SiO2](1−x) films: structure and optical properties

Materials research express, 2017-07, Vol.4 (7), p.75010

2017

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Comparison of structures of gold nanoparticles synthesized by pulsed laser ablation and magnetron sputtering

Journal of structural chemistry, 2017-12, Vol.58 (8), p.1581-1587

2017

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Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots

Nanotechnology, 2009-08, Vol.20 (34), p.345702-345702

2009

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Structure and infrared photoluminescence of GeSi nanocrystals formed by high temperature annealing of GeOx/SiO2 multilayers

Materials research express, 2016-08, Vol.3 (8)

2016

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Light-emitting Si nanostructures formed by swift heavy ions in a-Si:H/SiO2 multilayer heterostructures

Materials research express, 2017-08, Vol.4 (8)

2017

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Light-emitting Si nanostructures formed in silica layers by irradiation with swift heavy ions

Applied physics. A, Materials science & processing, 2010-03, Vol.98 (4), p.873-877

2010

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Structure and optical properties of silicon nanopowders

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-02, Vol.147 (2), p.222-225

2008

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Diffusion-Controlled growth of Ge nanocrystals in SiO{sub 2} films under conditions of ion synthesis at high pressure

Semiconductors (Woodbury, N.Y.), 2017-10, Vol.51 (10)

2017

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The properties of the nanometer thick Si/Ge films-on-insulator produced by Ge+ ion implantation and subsequent hydrogen transfer

Physica status solidi. C, 2008-12, Vol.5 (12), p.3724-3727

2008

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Effect of the ion-energy loss rate on defect formation during implantation in silicon nanocrystals

Semiconductors (Woodbury, N.Y.), 2008, Vol.42 (9), p.1127-1131

2008

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Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO{sub 2} Surface Films

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (13)

2018

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Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO.sub.2 Surface Films

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (13), p.1696

2018

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The regularities of phase formation in Fe 3 Si(111)/Si(111) structure at vacuum annealing

Journal of physics. Conference series, 2017-05, Vol.857, p.12053

2017

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Specific features of the ion-beam synthesis of Ge nanocrystals in SiO{sub 2} thin films

Semiconductors (Woodbury, N.Y.), 2017-09, Vol.51 (9)

2017

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Infrared photoluminescence from GeSi nanocrystals embedded in a germanium–silicate matrix

Journal of experimental and theoretical physics, 2015-12, Vol.121 (6), p.1076-1081

2015

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Ion-beam synthesis of InSb nanocrystals in the buried SiO2 layer of a silicon-on-insulator structure

Semiconductors (Woodbury, N.Y.), 2014-09, Vol.48 (9), p.1196-1201

2014

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Light-emitting Si nanostructures formed by swift heavy ions in a-Si:H/SiO 2 multilayer heterostructures

Materials research express, 2017-08, Vol.4 (8), p.85001

2017

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Structure, phase composition, and optical properties of silicon nanopowders

Bulletin of the Russian Academy of Sciences. Physics, 2008-04, Vol.72 (4), p.500-503

2008

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Structure and infrared photoluminescence of GeSi nanocrystals formed by high temperature annealing of GeO x /SiO 2 multilayers

Materials research express, 2016-08, Vol.3 (8), p.85019

2016

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Femtosecond pulse crystallization of thin amorphous hydrogenated films on glass substrates using near ultraviolet laser radiation

JETP letters, 2011-07, Vol.93 (10), p.603-606

2011

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Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure

Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films

The regularities of phase formation in Fe3Si(111)/Si(111) structure at vacuum annealing

Raman investigation of the electron-phonon interaction in n-type silicon nanocrystals

Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films

Ge nanocrystals formed by furnace annealing of Ge(x)[SiO2](1−x) films: structure and optical properties

Comparison of structures of gold nanoparticles synthesized by pulsed laser ablation and magnetron sputtering

Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots

Structure and infrared photoluminescence of GeSi nanocrystals formed by high temperature annealing of GeOx/SiO2 multilayers

Light-emitting Si nanostructures formed by swift heavy ions in a-Si:H/SiO2 multilayer heterostructures

Light-emitting Si nanostructures formed in silica layers by irradiation with swift heavy ions

Structure and optical properties of silicon nanopowders

Diffusion-Controlled growth of Ge nanocrystals in SiO{sub 2} films under conditions of ion synthesis at high pressure

The properties of the nanometer thick Si/Ge films-on-insulator produced by Ge+ ion implantation and subsequent hydrogen transfer

Effect of the ion-energy loss rate on defect formation during implantation in silicon nanocrystals

Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO{sub 2} Surface Films

Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO.sub.2 Surface Films

The regularities of phase formation in Fe 3 Si(111)/Si(111) structure at vacuum annealing

Specific features of the ion-beam synthesis of Ge nanocrystals in SiO{sub 2} thin films

Infrared photoluminescence from GeSi nanocrystals embedded in a germanium–silicate matrix

Ion-beam synthesis of InSb nanocrystals in the buried SiO2 layer of a silicon-on-insulator structure

Light-emitting Si nanostructures formed by swift heavy ions in a-Si:H/SiO 2 multilayer heterostructures

Structure, phase composition, and optical properties of silicon nanopowders

Structure and infrared photoluminescence of GeSi nanocrystals formed by high temperature annealing of GeO x /SiO 2 multilayers

Femtosecond pulse crystallization of thin amorphous hydrogenated films on glass substrates using near ultraviolet laser radiation

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