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InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well Exhibiting Giant Electrorefractive Index Change

Japanese Journal of Applied Physics, 2011-03, Vol.50 (3), p.032204-032204-6

2011

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Influence of Heterointerface Abruptness on Electrorefractive Effect in InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4), p.04DG04-04DG04-4

2010

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Electrorefractive Effect in GaInNAs/GaAs Five-Layer Asymmetric Coupled Quantum Well

Japanese Journal of Applied Physics, 2009-04, Vol.48 (4S), p.4

2009

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Observation of Giant Electrorefractive Effect in Five-Layer Asymmetric Coupled Quantum Wells (FACQWs)

Japanese Journal of Applied Physics, 2004-12, Vol.43 (No. 12A), p.L1540-L1542

2004

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Changes in Orientational Polarization and Structure of Silicon Dioxide Film by Fluorine Addition

Journal of the Electrochemical Society, 1999-11, Vol.146 (11), p.4196-4202

1999

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ELECTRON CYCLOTRON RESONANCE-REACTIVE ION BEAM ETCHING OF InP BY CYCLIC INJECTION OF CH4/H2/Ar AND O2

Jpn.J.Appl.Phys ,Part 1. Vol. 41, no. 1, pp. 15-19. 2002, 2002-01, Vol.41 (1), p.15-19

2002

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Report on the Start of the Institute of Pure and Applied Physics

Butsuri, 2000/09/05, Vol.55(9), pp.661

Tada, Kunio

2000

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Reduction Mechanism in the Dielectric Constant of Fluorine‐Doped Silicon Dioxide Film

Journal of the Electrochemical Society, 1997-07, Vol.144 (7), p.2531-2537

1997

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Influence of One Monolayer Thickness Variation in GaAs/AlGaAs Five-Layer Asymmetric Coupled Quantum Well upon Electrorefractive Index Change

Japanese Journal of Applied Physics, 2001, Vol.40 (2R), p.656-661

2001

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In-situ As-P exchange monitoring in metal-organic vapor phase epitaxy of InGaAs/InP heterostructure by spectroscopic and kinetic ellipsometry

Thin solid films, 1998-02, Vol.313 (1-2), p.604-608

1998

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Anomalous Sharp Dip of Large Field-Induced Refractive Index Change in GaAs/AlGaAs Five-Layer Asymmetric Coupled Quantum Well

Japanese Journal of Applied Physics, 2000, Vol.39 (11R), p.6329-6333

2000

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Low-Voltage Mach--Zehnder Modulator with InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well

Japanese Journal of Applied Physics, 2012-04, Vol.51 (4), p.042203-042203-6

2012

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Preparation of low dielectric constant F-doped SiO2 films by plasma enhanced chemical vapor deposition

Applied physics letters, 1996-02, Vol.68 (6), p.832-834

1996

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A study on electroabsorption effects in coupled quantum wells

Japanese Journal of Applied Physics, 1993, Vol.32 (1B), p.536-539

1993

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Utilization of non-pseudomorphic growth to realize tensile strain on GaAs substrates

Japanese Journal of Applied Physics, 1993-11, Vol.32 (11A), p.L1596-L1598

1993

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Preparation of low-dielectric-constant F-doped SiO2 films by plasma-enhanced chemical vapor deposition

Japanese journal of applied physics, 1996, Vol.35 (2B), p.1468-1473

1996

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Design and analysis of the X-waveguide optical switch in a MESFET geometry

JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE, 1992, Vol.31 (9A), p.2748-2752

1992

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Fabrication and Optical Characterization of Five-Layer Asymmetric Coupled Quantum Well (FACQW)

Japanese Journal of Applied Physics, 2002-04, Vol.41 (Part 1, No. 4B), p.2701-2706

2002

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Fabrication of multiple-electrode chirped-grating-tunable distributed-feedback lasers

Japanese Journal of Applied Physics, 1994, Vol.33 (1B), p.856-858

1994

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Observation of Quantum-Confined Stark Effect in a Graded-Gap Quantum Well

Japanese Journal of Applied Physics, 1989-11, Vol.28 (11A), p.L1982

1989

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Kinetics of GaAs Metalorganic Chemical Vapor Deposition Studied by Numerical Analysis Based on Experimental Reaction Data

Japanese Journal of Applied Physics, 2000, Vol.39 (4R), p.1642-1649

2000

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Low-Voltage Mach–Zehnder Modulator with InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well

Japanese Journal of Applied Physics, 2012-04, Vol.51 (4R), p.42203

2012

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Anomalous refractive index change and recovery of electro-optic coefficient r33 in proton-exchanged LiTaO3 optical waveguides after annealing

Journal of applied physics, 1992-04, Vol.71 (8), p.3966-3974

1992

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Wavelength filtering operation in absorptive-grating gain-coupled distributed-feedback MQW lasers

Japanese Journal of Applied Physics, 1995-02, Vol.34 (2B), p.1249-1252

1995

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Strong Exciton Absorption Peak Enhancement without Redshift of Absorption Edge in Al 0.3 Ga 0.7 As/GaAs Five-Step Asymmetric Coupled Quantum Well with Modified Potential

Japanese Journal of Applied Physics, 1997-07, Vol.36 (7A), p.L855

1997

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InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well Exhibiting Giant Electrorefractive Index Change

Influence of Heterointerface Abruptness on Electrorefractive Effect in InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well

Electrorefractive Effect in GaInNAs/GaAs Five-Layer Asymmetric Coupled Quantum Well

Observation of Giant Electrorefractive Effect in Five-Layer Asymmetric Coupled Quantum Wells (FACQWs)

Changes in Orientational Polarization and Structure of Silicon Dioxide Film by Fluorine Addition

ELECTRON CYCLOTRON RESONANCE-REACTIVE ION BEAM ETCHING OF InP BY CYCLIC INJECTION OF CH4/H2/Ar AND O2

Report on the Start of the Institute of Pure and Applied Physics

Reduction Mechanism in the Dielectric Constant of Fluorine‐Doped Silicon Dioxide Film

Influence of One Monolayer Thickness Variation in GaAs/AlGaAs Five-Layer Asymmetric Coupled Quantum Well upon Electrorefractive Index Change

In-situ As-P exchange monitoring in metal-organic vapor phase epitaxy of InGaAs/InP heterostructure by spectroscopic and kinetic ellipsometry

Anomalous Sharp Dip of Large Field-Induced Refractive Index Change in GaAs/AlGaAs Five-Layer Asymmetric Coupled Quantum Well

Low-Voltage Mach--Zehnder Modulator with InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well

Preparation of low dielectric constant F-doped SiO2 films by plasma enhanced chemical vapor deposition

A study on electroabsorption effects in coupled quantum wells

Utilization of non-pseudomorphic growth to realize tensile strain on GaAs substrates

Preparation of low-dielectric-constant F-doped SiO2 films by plasma-enhanced chemical vapor deposition

Design and analysis of the X-waveguide optical switch in a MESFET geometry

Fabrication and Optical Characterization of Five-Layer Asymmetric Coupled Quantum Well (FACQW)

Fabrication of multiple-electrode chirped-grating-tunable distributed-feedback lasers

Observation of Quantum-Confined Stark Effect in a Graded-Gap Quantum Well

Kinetics of GaAs Metalorganic Chemical Vapor Deposition Studied by Numerical Analysis Based on Experimental Reaction Data

Low-Voltage Mach–Zehnder Modulator with InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well

Anomalous refractive index change and recovery of electro-optic coefficient r33 in proton-exchanged LiTaO3 optical waveguides after annealing

Wavelength filtering operation in absorptive-grating gain-coupled distributed-feedback MQW lasers

Strong Exciton Absorption Peak Enhancement without Redshift of Absorption Edge in Al 0.3 Ga 0.7 As/GaAs Five-Step Asymmetric Coupled Quantum Well with Modified Potential

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