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Observation of multicharged excitons and biexcitons in a single InGaAs quantum dot

Physical review. B, Condensed matter, 2001-04, Vol.63 (16), Article 161305

2001

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Quantum well mobility and the effect of gate dielectrics in remote doped InSb/AlxIn1 − xSb heterostructures

Semiconductor science and technology, 2010-12, Vol.25 (12), p.125005

2010

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Giant enhanced g-factors in an InSb two-dimensional gas

Physical review. B, Condensed matter and materials physics, 2009-09, Vol.80 (12), Article 125328

2009

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Schottky barrier transport in InSb/AlInSb quantum well field effect transistor structures

Semiconductor science and technology, 2006-10, Vol.21 (10), p.1408-1411

2006

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Electron transport lifetimes in InSb/Al1-xInxSb quantum well 2DEGs

Semiconductor science and technology, 2017-08, Vol.32 (8)

2017

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Electronic transport in modulation-doped InSb quantum well heterostructures

Physical review. B, Condensed matter and materials physics, 2008-04, Vol.77 (16), Article 165334

2008

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Preparation of InAs(0 0 1) surface for spin injection via a chemical route

Journal of physics. D, Applied physics, 2007-05, Vol.40 (10), p.3190-3193

2007

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Thermally activated resonant tunnelling in GaAs/AlGaAs triple barrier heterostructures

Semiconductor science and technology, 2015-10, Vol.30 (10), p.105035

2015

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Magnetic properties of the half-metallic ferromagnet NiMnSb grown on InSb by pulsed laser deposition

Applied physics. A, Materials science & processing, 2004-09, Vol.79 (4-6), p.1211-1213

2004

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Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots

Journal of applied physics, 1999-09, Vol.86 (5), p.2555-2561

1999

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Lateral n–i–p junctions formed in an InSb quantum well by bevel etching

Semiconductor science and technology, 2005-02, Vol.20 (2), p.144-148

2005

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Optical Microscopy as a probe of the rate limiting transport lifetime in InSb/Al1-xInxSb quantum wells

Journal of physics. Conference series, 2018, Vol.964 (1)

2018

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Structural, magnetic, and electrical properties of NiMnSb thin films grown on InSb by pulsed-laser deposition

Applied physics letters, 2004-10, Vol.85 (15), p.3178-3180

2004

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Low temperature electrical characterisation of tungsten nano-wires fabricated by electron and ion beam induced chemical vapour deposition

Thin solid films, 2007-06, Vol.515 (17), p.6791-6797

2007

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Room temperature ballistic transport in InSb quantum well nanodevices

Applied physics letters, 2011-12, Vol.99 (24), p.242101-242101-3

2011

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Transport effects in remote-doped InSb/AlxIn1-xSb heterostructures

New journal of physics, 2010-05, Vol.12, p.053022

2010

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A surface-gated InSb quantum well single electron transistor

New journal of physics, 2007-08, Vol.9 (8), p.261-261

2007

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Photoluminescence spectroscopy and decay time measurements of polycrystalline thin film CdTe/CdS solar cells

Journal of applied physics, 2000-12, Vol.88 (11), p.6451-6456

2000

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Possible use of the half-Hausler alloy NiMnSb in spintronics: synthesis and physical properties of arc melted NiMnSb and of NiMnSb thin films grown on InSb by pulsed laser deposition

Journal of physics. Conference series, 2005-01, Vol.10 (1), p.167-170

2005

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Characterization of a two-dimensional electron gas in an InSb/InAlSb heterostructure using surface acoustic wave attenuation

Semiconductor science and technology, 2002-10, Vol.17 (10), p.1111-1114

2002

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Low temperature photoluminescence spectroscopy of thin film, polycrystalline CdTe/CdS solar cell structures

Semiconductor science and technology, 2000-10, Vol.15 (10), p.975-979

2000

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Detection of THz radiation with devices made from wafers with HgTe and InSb quantum wells

AIP conference proceedings, 2011, Vol.1399 (1)

2011

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Room temperature operation of AlGaN/GaN quantum well infrared photodetectors at a 3-4 μm wavelength range

Semiconductor science and technology, 2007-11, Vol.22 (11), p.1240-1244

2007

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Characterisation of tungsten nano-wires prepared by electron and ion beam induced chemical vapour deposition

Journal of physics. Conference series, 2006-02, Vol.26 (1), p.363-366

2006

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Charge accumulation in GaAs/AlGaAs triple barrier resonant tunneling structures

Journal of applied physics, 1998-01, Vol.83 (2), p.882-887

1998

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Observation of multicharged excitons and biexcitons in a single InGaAs quantum dot

Quantum well mobility and the effect of gate dielectrics in remote doped InSb/AlxIn1 − xSb heterostructures

Giant enhanced g-factors in an InSb two-dimensional gas

Schottky barrier transport in InSb/AlInSb quantum well field effect transistor structures

Electron transport lifetimes in InSb/Al1-xInxSb quantum well 2DEGs

Electronic transport in modulation-doped InSb quantum well heterostructures

Preparation of InAs(0 0 1) surface for spin injection via a chemical route

Thermally activated resonant tunnelling in GaAs/AlGaAs triple barrier heterostructures

Magnetic properties of the half-metallic ferromagnet NiMnSb grown on InSb by pulsed laser deposition

Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots

Lateral n–i–p junctions formed in an InSb quantum well by bevel etching

Optical Microscopy as a probe of the rate limiting transport lifetime in InSb/Al1-xInxSb quantum wells

Structural, magnetic, and electrical properties of NiMnSb thin films grown on InSb by pulsed-laser deposition

Low temperature electrical characterisation of tungsten nano-wires fabricated by electron and ion beam induced chemical vapour deposition

Room temperature ballistic transport in InSb quantum well nanodevices

Transport effects in remote-doped InSb/AlxIn1-xSb heterostructures

A surface-gated InSb quantum well single electron transistor

Photoluminescence spectroscopy and decay time measurements of polycrystalline thin film CdTe/CdS solar cells

Possible use of the half-Hausler alloy NiMnSb in spintronics: synthesis and physical properties of arc melted NiMnSb and of NiMnSb thin films grown on InSb by pulsed laser deposition

Characterization of a two-dimensional electron gas in an InSb/InAlSb heterostructure using surface acoustic wave attenuation

Low temperature photoluminescence spectroscopy of thin film, polycrystalline CdTe/CdS solar cell structures

Detection of THz radiation with devices made from wafers with HgTe and InSb quantum wells

Room temperature operation of AlGaN/GaN quantum well infrared photodetectors at a 3-4 μm wavelength range

Characterisation of tungsten nano-wires prepared by electron and ion beam induced chemical vapour deposition

Charge accumulation in GaAs/AlGaAs triple barrier resonant tunneling structures

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