UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

1.54-μm Luminescence of erbium-implanted III-V semiconductors and silicon

Applied physics letters, 1983-01, Vol.43 (10), p.943-945

1983

Volltextzugriff (PDF)

Subpicosecond carrier lifetimes in radiation-damaged GaAs

Applied physics letters, 1991-04, Vol.58 (17), p.1881-1883

1991

Volltextzugriff (PDF)

1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxy

Applied physics letters, 1985-01, Vol.46 (4), p.381-383

1985

Volltextzugriff (PDF)

Picosecond pulse response characteristics of GaAs metal-semiconductor-metal photodetectors

Journal of applied physics, 1991-08, Vol.70 (4), p.2435-2448

1991

Volltextzugriff (PDF)

FRM-II: The new German research reactor

Nuclear engineering and design, 1997-12, Vol.178 (1), p.127-133

1997

Volltextzugriff (PDF)

Transit time limited response of GaAs metal-semiconductor-metal photodiodes

Applied physics letters, 1991-06, Vol.58 (22), p.2503-2505

1991

Volltextzugriff (PDF)

Luminescence of the rare-earth ion ytterbium in InP, GaP, and GaAs

Journal of applied physics, 1985-03, Vol.57 (6), p.2182-2185

1985

Volltextzugriff (PDF)

Rare earth activated luminescence in InP, GaP and GaAs

Journal of crystal growth, 1983-11, Vol.64 (1), p.165-168

1983

Volltextzugriff (PDF)

Eastern Europe and Community of Independent States

International migration, 1998-01, Vol.36 (4), p.587-607

Axmann, Agnes

1998

Volltextzugriff (PDF)

Source materials for ion implantation

Applied physics letters, 1973-01, Vol.23 (11), p.645-648

Axmann, A.

1973

Volltextzugriff (PDF)

Picosecond electron and hole transport in metal-semiconductor-metal photodetectors

Semiconductor science and technology, 1992-03, Vol.7 (3B), p.B157-B159

1992

Volltextzugriff (PDF)

Subpicosecond characterization of carrier transport in GaAs-metal-semiconductor-metal photodiodes

Applied physics letters, 1991-04, Vol.58 (13), p.1410-1412

1991

Volltextzugriff (PDF)

Photoluminescence of neodymium-implanted gallium phosphide and gallium arsenide

Journal of applied physics, 1986-03, Vol.59 (6), p.2210-2212

1986

Volltextzugriff (PDF)

A simple method to produce ions of the heavy metals Nb, Mo, Ta, W and Re in a hollow cathode source

Nuclear instruments & methods, 1978-01, Vol.153 (2), p.571-572

Axmann, A.

1978

Volltextzugriff (PDF)

Structural Investigations of Polyacetylene and Polyphenylene by Neutron Scattering

Molecular crystals and liquid crystals (1969), 1981-12, Vol.77 (1-4), p.125-135

1981

Volltextzugriff (PDF)

Raman scattering studies in phosphorus implanted and laser annealed boron doped Si

Solid state communications, 1985-01, Vol.53 (10), p.861-865

1985

Volltextzugriff (PDF)

10 Gbit/s monolithic integrated optoelectronic receiver using an MSM photodiode and AlGaAs/GaAs HEMTs

ESSDERC '91: 21st European Solid State Device Research Conference, 1991, Vol.15 (1), p.275-278

1991

Volltextzugriff (PDF)

The determination of the neél point in the diluted ferromagnetic chain system CsNiF3 (2% Mg)

Solid state communications, 1976-06, Vol.19 (2), p.115-117

1976

Volltextzugriff (PDF)

The determination of the neél point in the diluted ferromagnetic chain system CsNiF 3 (2% Mg)

Solid state communications, 1976, Vol.19 (2), p.115-117

1976

Volltextzugriff (PDF)

Fine structure and critical behaviour of the magnetic ordering of MnOOH

Journal of magnetism and magnetic materials, 1980, Vol.15, p.507-508

1980

Volltextzugriff (PDF)

Absorption edge of ultraheavily doped Si

Solid state communications, 1983-01, Vol.48 (5), p.457-459

1983

Volltextzugriff (PDF)

Study of the ambipolar carrier expansion in silicon by an optical time-of-flight method

Journal of luminescence, 1984-01, Vol.31, p.681-683

1984

Volltextzugriff (PDF)

Transforming growth factor-beta1-induced activation of the Raf-MEK-MAPK signaling pathway in rat lung fibroblasts via a PKC-dependent mechanism

Biochemical and biophysical research communications, 1998-08, Vol.249 (2), p.456-460

1998

Volltextzugriff (PDF)

Germanium Extremely Heavily Doped by Ion-Implantation and Laser Annealing: A Photoluminescence Study

MRS proceedings, 1983, Vol.23, Article 147

1983

Volltextzugriff (PDF)

Implantation doping of germanium with Sb, As, and P

Applied Physics, 1977-02, Vol.12 (2), p.173-178

1977

Volltextzugriff (PDF)

1 – 25 von 815

Menü

Weitere Dienste

Einstellungen

1.54-μm Luminescence of erbium-implanted III-V semiconductors and silicon

Subpicosecond carrier lifetimes in radiation-damaged GaAs

1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxy

Picosecond pulse response characteristics of GaAs metal-semiconductor-metal photodetectors

FRM-II: The new German research reactor

Transit time limited response of GaAs metal-semiconductor-metal photodiodes

Luminescence of the rare-earth ion ytterbium in InP, GaP, and GaAs

Rare earth activated luminescence in InP, GaP and GaAs

Eastern Europe and Community of Independent States

Source materials for ion implantation

Picosecond electron and hole transport in metal-semiconductor-metal photodetectors

Subpicosecond characterization of carrier transport in GaAs-metal-semiconductor-metal photodiodes

Photoluminescence of neodymium-implanted gallium phosphide and gallium arsenide

A simple method to produce ions of the heavy metals Nb, Mo, Ta, W and Re in a hollow cathode source

Structural Investigations of Polyacetylene and Polyphenylene by Neutron Scattering

Raman scattering studies in phosphorus implanted and laser annealed boron doped Si

10 Gbit/s monolithic integrated optoelectronic receiver using an MSM photodiode and AlGaAs/GaAs HEMTs

The determination of the neél point in the diluted ferromagnetic chain system CsNiF3 (2% Mg)

The determination of the neél point in the diluted ferromagnetic chain system CsNiF 3 (2% Mg)

Fine structure and critical behaviour of the magnetic ordering of MnOOH

Absorption edge of ultraheavily doped Si

Study of the ambipolar carrier expansion in silicon by an optical time-of-flight method

Transforming growth factor-beta1-induced activation of the Raf-MEK-MAPK signaling pathway in rat lung fibroblasts via a PKC-dependent mechanism

Germanium Extremely Heavily Doped by Ion-Implantation and Laser Annealing: A Photoluminescence Study

Implantation doping of germanium with Sb, As, and P

Aktive Filter

Suchergebnisse filtern