UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Insights into dynamic switching behavior and electric field distribution of depletion-mode GaN HEMT with bonding pad over active layout

Semiconductor science and technology, 2024-04, Vol.39 (4), p.45011

2024

Volltextzugriff (PDF)

Small GaN-based light-emitting diodes with a single electrode pad fabricated on a sapphire substrate

Semiconductor science and technology, 2008-04, Vol.23 (4), p.045013

2008

Volltextzugriff (PDF)

A pad roughness model for the analysis of lubrication in the chemical mechanical polishing of a silicon wafer

Semiconductor science and technology, 2007-07, Vol.22 (7), p.793-797

2007

Volltextzugriff (PDF)

Annealing behaviour of the specific contact layer resistivity for an Au bump-TiW-Al pad structure

Semiconductor science and technology, 1994-09, Vol.9 (9), p.1686-1689

1994

Volltextzugriff (PDF)

Enhanced performance in graphene RF transistors via advanced process integration

Semiconductor science and technology, 2017-04, Vol.32 (4), p.45009

2017

Volltextzugriff (PDF)

A novel circular double-gate SOI MOSFET with raised source/drain

Semiconductor science and technology, 2021-06, Vol.36 (6), p.65009

2021

Volltextzugriff (PDF)

Extension of Shockley's transmission line method (TLM) to characterize ohmic contacts

Semiconductor science and technology, 2017-05, Vol.32 (5), p.55001

2017

Volltextzugriff (PDF)

The reliability analysis of GaN-based light-emitting diodes with different current-blocking layers

Semiconductor science and technology, 2011-08, Vol.26 (8), p.085005

2011

Volltextzugriff (PDF)

Design of film supported single mesa Schottky diodes for above 1THz application with submicron T-junction

Semiconductor science and technology, 2022-10, Vol.37 (10), p.105017

2022

Volltextzugriff (PDF)

Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation

Semiconductor science and technology, 2014-03, Vol.29 (3), p.35010

2014

Volltextzugriff (PDF)

Further improvement in the light output power of InGaN-based light emitting diodes by reflective current blocking design

Semiconductor science and technology, 2011-09, Vol.26 (9), p.95013-4

2011

Volltextzugriff (PDF)

High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO2 gate insulators

Semiconductor science and technology, 2013-02, Vol.28 (2)

2013

Volltextzugriff (PDF)

Ohmic metal/Hg1-xCdxTe (x ≈ 0.3) contacts

Semiconductor science and technology, 2020-12, Vol.35 (12)

2020

Volltextzugriff (PDF)

Surface-tensile-stress induced polishing-voids in cross-point phase-change-memory cells: corrosion mechanism and solution

Semiconductor science and technology, 2019-06, Vol.34 (6), p.65002

2019

Volltextzugriff (PDF)

Photoresponse of silicon with asymmetric area contacts

Semiconductor science and technology, 2017-01, Vol.32 (1), p.15001

2017

Volltextzugriff (PDF)

A reliable Cu-Sn stack bonding technology for 3D-TSV packaging

Semiconductor science and technology, 2014-02, Vol.29 (2), p.25003

2014

Volltextzugriff (PDF)

Selective high resistivity region formation by a Ni catalyst on GaN light-emitting diodes

Semiconductor science and technology, 2008-02, Vol.23 (2), p.025012, Article 025012

2008

Volltextzugriff (PDF)

A new method for determination of parasitic capacitances for PHEMTs

Semiconductor science and technology, 2005-06, Vol.20 (6), p.586-591

2005

Volltextzugriff (PDF)

Ohmic contacts to pseudomorphic HEMTs with low contact resistance due to enhanced Ge penetration through AlGaAs layers

Semiconductor science and technology, 2008-02, Vol.23 (2), p.025019

2008

Volltextzugriff (PDF)

The stress-induced escape of migrating aluminium from silicide interconnects

Semiconductor science and technology, 2001-10, Vol.16 (10), p.817-821

Zehe, A

2001

Volltextzugriff (PDF)

Si/Si1-xGex dots grown by selective epitaxy

Semiconductor science and technology, 1994-04, Vol.9 (4), p.387-391

1994

Volltextzugriff (PDF)

Silicon device thinning using preferential polishing: progress in flatness and electrical properties

Semiconductor science and technology, 1992-01, Vol.7 (1A), p.A243-A248

1992

Volltextzugriff (PDF)

Physical design guidelines to minimize area-specific ON-resistance for rated ON-current and breakdown voltage of GaN power HEMTs

Semiconductor science and technology, 2023-03, Vol.38 (3), p.35021

2023

Volltextzugriff (PDF)

The role of printing techniques for large-area dye sensitized solar cells

Semiconductor science and technology, 2015-10, Vol.30 (10), p.104003

2015

Volltextzugriff (PDF)

Off-state leakage current reduction in AlGaN/GaN high electron mobility transistors by combining surface treatment and post-gate annealing

Semiconductor science and technology, 2016-05, Vol.31 (5), p.55019

2016

Volltextzugriff (PDF)

1 – 25 von 513

Suche als RSS-Feed

Aktive Filter

KollektionEbook Central Perpetual and DDA

KollektionIEEE Xplore

SpracheSerbian

Zeitschrift / SerieSemiconductor Science And Technology

ThemaEngineering, Electrical & Electronic

ThemaPhysical Sciences

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(513)
Mit Volltextzugriff
(513)

Publikationsform

Artikel
(513)

Sprache

Englisch
(513)

Erscheinungsjahr

n.n

Kollektion

IEEE Electronic Library Online
(0)

Zeitschrift / Serie

Semiconductor Science & Technology
(1)

Menü

Weitere Dienste

Einstellungen

Insights into dynamic switching behavior and electric field distribution of depletion-mode GaN HEMT with bonding pad over active layout

Small GaN-based light-emitting diodes with a single electrode pad fabricated on a sapphire substrate

A pad roughness model for the analysis of lubrication in the chemical mechanical polishing of a silicon wafer

Annealing behaviour of the specific contact layer resistivity for an Au bump-TiW-Al pad structure

Enhanced performance in graphene RF transistors via advanced process integration

A novel circular double-gate SOI MOSFET with raised source/drain

Extension of Shockley's transmission line method (TLM) to characterize ohmic contacts

The reliability analysis of GaN-based light-emitting diodes with different current-blocking layers

Design of film supported single mesa Schottky diodes for above 1THz application with submicron T-junction

Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation

Further improvement in the light output power of InGaN-based light emitting diodes by reflective current blocking design

High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO2 gate insulators

Ohmic metal/Hg1-xCdxTe (x ≈ 0.3) contacts

Surface-tensile-stress induced polishing-voids in cross-point phase-change-memory cells: corrosion mechanism and solution

Photoresponse of silicon with asymmetric area contacts

A reliable Cu-Sn stack bonding technology for 3D-TSV packaging

Selective high resistivity region formation by a Ni catalyst on GaN light-emitting diodes

A new method for determination of parasitic capacitances for PHEMTs

Ohmic contacts to pseudomorphic HEMTs with low contact resistance due to enhanced Ge penetration through AlGaAs layers

The stress-induced escape of migrating aluminium from silicide interconnects

Si/Si1-xGex dots grown by selective epitaxy

Silicon device thinning using preferential polishing: progress in flatness and electrical properties

Physical design guidelines to minimize area-specific ON-resistance for rated ON-current and breakdown voltage of GaN power HEMTs

The role of printing techniques for large-area dye sensitized solar cells

Off-state leakage current reduction in AlGaN/GaN high electron mobility transistors by combining surface treatment and post-gate annealing

Aktive Filter

Suchergebnisse filtern