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High temperature RF performances of epitaxial bilayer graphene field-effect transistors on SiC substrate

Carbon (New York), 2020-08, Vol.164, p.435-441

2020

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Preparation and electrical transport properties of quasi free standing bilayer graphene on SiC (0001) substrate by H intercalation

Applied physics letters, 2014-11, Vol.105 (18)

2014

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Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond

Journal of semiconductors, 2020-12, Vol.41 (12), p.122801-85

2020

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Polycrystalline diamond MESFETs by Au-mask technology for RF applications

Science China. Technological sciences, 2013-04, Vol.56 (4), p.957-962

2013

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Design and realization of a X-band graphene amplifier MMIC

2017 IEEE 12th International Conference on ASIC (ASICON), 2017, p.694-697

2017

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Self-aligned graphene field-effect transistors on SiC (0001) substrates with self-oxidized gate dielectric

Journal of semiconductors, 2014-07, Vol.35 (7), p.74006-1-074006-5

2014

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A terahertz detector based on superconductor-graphene-superconductor Josephson junction

Carbon (New York), 2023-01, Vol.202, p.112-117

2023

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The status of MAPK cascades contributes to the induction and activation of Gata4 and Nkx2.5 during the stepwise process of cardiac differentiation

Cellular signalling, 2019-02, Vol.54, p.17-26

2019

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Field Effect Transistors and Low Noise Amplifier MMICs of Monolayer Graphene

IEEE electron device letters, 2021-02, Vol.42 (2), p.268-271

2021

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Two-Stage Ku-Band Graphene Low Noise Amplifier MMIC With Improved Fabrication Process

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1596-1599

2022

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Chemical vapor deposition graphene of high mobility by gradient growth method on an 4H-SiC (0 0 0 1) substrate

Applied surface science, 2018-10, Vol.454, p.68-73

2018

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Fast growth of single-crystal graphene on Cu Ni substrate by surface oxygen supply

Diamond and related materials, 2020-01, Vol.101, p.107634, Article 107634

2020

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Epitaxial graphene gas sensors on SiC substrate with high sensitivity

Journal of semiconductors, 2020-03, Vol.41 (3), p.32101

2020

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Heterodyne detection at 216, 432, and 648 GHz based on bilayer graphene field-effect transistor with quasi-optical coupling

Carbon (New York), 2017-09, Vol.121, p.235-241

2017

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Fast growth of single-crystal graphene on CuNi substrate by surface oxygen supply

Diamond and related materials, 2020-01, Vol.101, Article 107634

2020

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Contaminant-Free Wafer-Scale Assembled h‑BN/Graphene van der Waals Heterostructures for Graphene Field-Effect Transistors

ACS applied nano materials, 2021-06, Vol.4 (6), p.5677-5684

2021

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Source-field-plated Ga 2 O 3 MOSFET with a breakdown voltage of 550 V

Journal of semiconductors, 2019-01, Vol.40 (1), p.12803

2019

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Source-field-plated Ga2O3 MOSFET with a breakdown voltage of 550 V

Journal of semiconductors, 2019-01, Vol.40 (1)

2019

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Source-Field-Plated \beta -Ga2O3 MOSFET With Record Power Figure of Merit of 50.4 MW/cm2

IEEE electron device letters, 2019-01, Vol.40 (1), p.83-86

2019

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Source-Field-Plated [Formula Omitted]-Ga2O3 MOSFET With Record Power Figure of Merit of 50.4 MW/cm2

IEEE electron device letters, 2019-01, Vol.40 (1), p.83

2019

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High‐Frequency Flexible Graphene Field‐Effect Transistors with Short Gate Length of 50 nm and Record Extrinsic Cut‐Off Frequency

Physica status solidi. PSS-RRL. Rapid research letters, 2018-05, Vol.12 (5), p.n/a

2018

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High‐Frequency Flexible Graphene Field‐Effect Transistors with Short Gate Length of 50nm and Record Extrinsic Cut‐Off Frequency

Physica status solidi. PSS-RRL. Rapid research letters, 2018-05, Vol.12 (5)

2018

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Observation of Quantum Hall Effect and weak localization in p-type bilayer epitaxial graphene on SiC(0001)

Solid state communications, 2013-12, Vol.175-176, p.119-122

2013

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Observation of Quantum Hall Effect and weak localization in p-type bilayer epitaxial graphene on SiC(0001): Graphene V: Recent Advances in Studies of Graphene and Graphene analogues

Solid state communications, 2013, Vol.175-76, p.119-122

2013

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Influence of gate recess on the electronic characteristics of β-Ga2O3 MOSFETs

Superlattices and microstructures, 2018-05, Vol.117, p.132-136

2018

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High temperature RF performances of epitaxial bilayer graphene field-effect transistors on SiC substrate

Preparation and electrical transport properties of quasi free standing bilayer graphene on SiC (0001) substrate by H intercalation

Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond

Polycrystalline diamond MESFETs by Au-mask technology for RF applications

Design and realization of a X-band graphene amplifier MMIC

Self-aligned graphene field-effect transistors on SiC (0001) substrates with self-oxidized gate dielectric

A terahertz detector based on superconductor-graphene-superconductor Josephson junction

The status of MAPK cascades contributes to the induction and activation of Gata4 and Nkx2.5 during the stepwise process of cardiac differentiation

Field Effect Transistors and Low Noise Amplifier MMICs of Monolayer Graphene

Two-Stage Ku-Band Graphene Low Noise Amplifier MMIC With Improved Fabrication Process

Chemical vapor deposition graphene of high mobility by gradient growth method on an 4H-SiC (0 0 0 1) substrate

Fast growth of single-crystal graphene on Cu Ni substrate by surface oxygen supply

Epitaxial graphene gas sensors on SiC substrate with high sensitivity

Heterodyne detection at 216, 432, and 648 GHz based on bilayer graphene field-effect transistor with quasi-optical coupling

Fast growth of single-crystal graphene on CuNi substrate by surface oxygen supply

Contaminant-Free Wafer-Scale Assembled h‑BN/Graphene van der Waals Heterostructures for Graphene Field-Effect Transistors

Source-field-plated Ga 2 O 3 MOSFET with a breakdown voltage of 550 V

Source-field-plated Ga2O3 MOSFET with a breakdown voltage of 550 V

Source-Field-Plated \beta -Ga2O3 MOSFET With Record Power Figure of Merit of 50.4 MW/cm2

Source-Field-Plated [Formula Omitted]-Ga2O3 MOSFET With Record Power Figure of Merit of 50.4 MW/cm2

High‐Frequency Flexible Graphene Field‐Effect Transistors with Short Gate Length of 50 nm and Record Extrinsic Cut‐Off Frequency

High‐Frequency Flexible Graphene Field‐Effect Transistors with Short Gate Length of 50nm and Record Extrinsic Cut‐Off Frequency

Observation of Quantum Hall Effect and weak localization in p-type bilayer epitaxial graphene on SiC(0001)

Observation of Quantum Hall Effect and weak localization in p-type bilayer epitaxial graphene on SiC(0001): Graphene V: Recent Advances in Studies of Graphene and Graphene analogues

Influence of gate recess on the electronic characteristics of β-Ga2O3 MOSFETs

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