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Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure

Semiconductors (Woodbury, N.Y.), 2017-10, Vol.51 (10), p.1364-1369

2017

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Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (13), p.1696-1703

2018

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Raman investigation of the electron-phonon interaction in n-type silicon nanocrystals

Physics of the solid state, 2008-05, Vol.50 (5), p.962-965

2008

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Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films

Semiconductors (Woodbury, N.Y.), 2017-09, Vol.51 (9), p.1240-1246

2017

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Ge nanocrystals formed by furnace annealing of Ge ( x ) [SiO 2 ] (1− x ) films: structure and optical properties

Materials research express, 2017-07, Vol.4 (7), p.75010

2017

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Comparison of structures of gold nanoparticles synthesized by pulsed laser ablation and magnetron sputtering

Journal of structural chemistry, 2017-12, Vol.58 (8), p.1581-1587

2017

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Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots

Nanotechnology, 2009-08, Vol.20 (34), p.345702-345702

2009

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Light-emitting Si nanostructures formed in silica layers by irradiation with swift heavy ions

Applied physics. A, Materials science & processing, 2010-03, Vol.98 (4), p.873-877

2010

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Structure and optical properties of silicon nanopowders

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-02, Vol.147 (2), p.222-225

2008

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Diffusion-Controlled growth of Ge nanocrystals in SiO{sub 2} films under conditions of ion synthesis at high pressure

Semiconductors (Woodbury, N.Y.), 2017-10, Vol.51 (10)

2017

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Silicon shallow doping by erbium and oxygen recoils implantation

Solid state communications, 2016-09, Vol.242, p.41-45

2016

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Raman shifts and photoluminescence of the InSb nanocrystals ion beam-synthesized in buried SiO2 layers

Journal of luminescence, 2018-12, Vol.204, p.656-662

2018

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The properties of the nanometer thick Si/Ge films-on-insulator produced by Ge+ ion implantation and subsequent hydrogen transfer

Physica status solidi. C, 2008-12, Vol.5 (12), p.3724-3727

2008

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Implantation of P ions in SiO2 layers with embedded Si nanocrystals

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2004-08, Vol.222 (3-4), p.497-504

2004

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Effect of the ion-energy loss rate on defect formation during implantation in silicon nanocrystals

Semiconductors (Woodbury, N.Y.), 2008, Vol.42 (9), p.1127-1131

2008

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Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO{sub 2} Surface Films

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (13)

2018

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Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO.sub.2 Surface Films

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (13), p.1696

2018

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Specific features of the ion-beam synthesis of Ge nanocrystals in SiO{sub 2} thin films

Semiconductors (Woodbury, N.Y.), 2017-09, Vol.51 (9)

2017

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Optical transitions in Ge nanocrystals formed by high-pressure annealing of Ge+ ion implanted SiO2 films

Solid state communications, 2004-01, Vol.129 (1), p.63-68

2004

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Effect of the Ni/Al 2 O 3 Catalyst Synthesis Conditions at Application of the Solution Combustion Preparation Method on the Catalyst’s Properties and Efficiency in the Process of Nanofibrous Carbons Synthesis from Methane

Advanced science letters, 2018-12, Vol.24 (12), p.9602-9604

2018

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Ion-beam synthesis of InSb nanocrystals in the buried SiO2 layer of a silicon-on-insulator structure

Semiconductors (Woodbury, N.Y.), 2014-09, Vol.48 (9), p.1196-1201

2014

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Epitaxial silicon films deposited at high rates by gas-jet electron beam plasma CVD

Surface & coatings technology, 2003-09, Vol.174, p.1178-1181

2003

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Light-emitting Si nanostructures formed by swift heavy ions in a-Si:H/SiO 2 multilayer heterostructures

Materials research express, 2017-08, Vol.4 (8), p.85001

2017

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Structure, phase composition, and optical properties of silicon nanopowders

Bulletin of the Russian Academy of Sciences. Physics, 2008-04, Vol.72 (4), p.500-503

2008

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Welding of dissimilar materials with interlayers employment containing copper and tantalum

Metal Working and Material Science, 2015-12 (4), p.61-71

2015

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Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure

Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films

Raman investigation of the electron-phonon interaction in n-type silicon nanocrystals

Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films

Ge nanocrystals formed by furnace annealing of Ge ( x ) [SiO 2 ] (1− x ) films: structure and optical properties

Comparison of structures of gold nanoparticles synthesized by pulsed laser ablation and magnetron sputtering

Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots

Light-emitting Si nanostructures formed in silica layers by irradiation with swift heavy ions

Structure and optical properties of silicon nanopowders

Diffusion-Controlled growth of Ge nanocrystals in SiO{sub 2} films under conditions of ion synthesis at high pressure

Silicon shallow doping by erbium and oxygen recoils implantation

Raman shifts and photoluminescence of the InSb nanocrystals ion beam-synthesized in buried SiO2 layers

The properties of the nanometer thick Si/Ge films-on-insulator produced by Ge+ ion implantation and subsequent hydrogen transfer

Implantation of P ions in SiO2 layers with embedded Si nanocrystals

Effect of the ion-energy loss rate on defect formation during implantation in silicon nanocrystals

Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO{sub 2} Surface Films

Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO.sub.2 Surface Films

Specific features of the ion-beam synthesis of Ge nanocrystals in SiO{sub 2} thin films

Optical transitions in Ge nanocrystals formed by high-pressure annealing of Ge+ ion implanted SiO2 films

Effect of the Ni/Al 2 O 3 Catalyst Synthesis Conditions at Application of the Solution Combustion Preparation Method on the Catalyst’s Properties and Efficiency in the Process of Nanofibrous Carbons Synthesis from Methane

Ion-beam synthesis of InSb nanocrystals in the buried SiO2 layer of a silicon-on-insulator structure

Epitaxial silicon films deposited at high rates by gas-jet electron beam plasma CVD

Light-emitting Si nanostructures formed by swift heavy ions in a-Si:H/SiO 2 multilayer heterostructures

Structure, phase composition, and optical properties of silicon nanopowders

Welding of dissimilar materials with interlayers employment containing copper and tantalum

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