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Dissipative quantum transport in silicon nanowires based on Wigner transport equation

Journal of applied physics, 2011-11, Vol.110 (9), p.093710-093710-8

Barraud, Sylvain

2011

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Gate-based high fidelity spin readout in a CMOS device

Nature nanotechnology, 2019-08, Vol.14 (8), p.737-741

2019

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Low-temperature tunable radio-frequency resonator for sensitive dispersive readout of nanoelectronic devices

Applied physics letters, 2019-03, Vol.114 (12)

2019

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Gate-Sensing Coherent Charge Oscillations in a Silicon Field-Effect Transistor

Nano letters, 2016-03, Vol.16 (3), p.1614-1619

2016

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Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor

Nano letters, 2014-04, Vol.14 (4), p.2094-2098

2014

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A CMOS dynamic random access architecture for radio-frequency readout of quantum devices

Nature electronics, 2019-06, Vol.2 (6), p.236-242

2019

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Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Applied physics letters, 2012-11, Vol.101 (21), p.213502

2012

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Low-temperature electrical characterization of junctionless transistors

Solid-state electronics, 2013-02, Vol.80, p.135-141

2013

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Less mobility degradation induced by transverse electric-field in junctionless transistors

Applied physics letters, 2014-11, Vol.105 (21)

2014

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Dopant-controlled single-electron pumping through a metallic island

Applied physics letters, 2016-05, Vol.108 (21)

2016

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The influence of Coulomb centers located in HfO2/SiO2 gate stacks on the effective electron mobility

Journal of applied physics, 2008-10, Vol.104 (7)

2008

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Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width

IEEE transactions on electron devices, 2013-02, Vol.60 (2), p.727-732

2013

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Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

Applied physics letters, 2014-12, Vol.105 (26)

2014

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A silicon-based single-electron interferometer coupled to a fermionic sea

Physical review. B, 2018-01, Vol.97 (4), Article 045405

2018

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Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors

Solid-state electronics, 2013-03, Vol.81, p.101-104

2013

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Quantum interference capacitor based on double-passage Landau-Zener-Stückelberg-Majorana interferometry

Physical review. B, 2019-11, Vol.100 (20), p.1, Article 205425

2019

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Effects of channel width variation on electrical characteristics of tri-gate Junctionless transistors

Solid-state electronics, 2013-03, Vol.81, p.58-62

2013

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Separation of surface accumulation and bulk neutral channel in junctionless transistors

Applied physics letters, 2014-06, Vol.104 (26)

2014

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Phase-coherent quantum transport in silicon nanowires based on Wigner transport equation: Comparison with the nonequilibrium-Green-function formalism

Journal of applied physics, 2009-09, Vol.106 (6), p.063714-063714-7

Barraud, Sylvain

2009

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Effect of strain on the electron effective mobility in biaxially strained silicon inversion layers: An experimental and theoretical analysis via atomic force microscopy measurements and Kubo-Greenwood mobility calculations

Journal of applied physics, 2008-03, Vol.103 (6), p.063715-063715-9

2008

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Very Low Temperature (Cyclic) Deposition / Etch of In-Situ Raised Sources and Drains

ECS transactions, 2014-08, Vol.64 (6), p.941-957

2014

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Aptasensors based on silicon nanowire field-effect transistors for electrical detection of thrombin

Microelectronic engineering, 2024-03, Vol.286, p.112130, Article 112130

2024

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Influence of interface traps position along channel in the low-frequency noise of junctionless nanowire transistors

Solid-state electronics, 2024-02, Vol.212, p.108835, Article 108835

2024

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Channel-Width-Dependent Mobility Degradation in Bulk Conduction Regime of Tri-Gate Junctionless Transistors

IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.3037-3041

2022

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Reduction of random telegraph noise by high-pressure deuterium annealing for p-type omega-gate nanowire FET

Nanotechnology, 2020-10, Vol.31 (41), p.415201-415201

2020

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Dissipative quantum transport in silicon nanowires based on Wigner transport equation

Gate-based high fidelity spin readout in a CMOS device

Low-temperature tunable radio-frequency resonator for sensitive dispersive readout of nanoelectronic devices

Gate-Sensing Coherent Charge Oscillations in a Silicon Field-Effect Transistor

Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor

A CMOS dynamic random access architecture for radio-frequency readout of quantum devices

Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Low-temperature electrical characterization of junctionless transistors

Less mobility degradation induced by transverse electric-field in junctionless transistors

Dopant-controlled single-electron pumping through a metallic island

The influence of Coulomb centers located in HfO2/SiO2 gate stacks on the effective electron mobility

Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width

Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

A silicon-based single-electron interferometer coupled to a fermionic sea

Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors

Quantum interference capacitor based on double-passage Landau-Zener-Stückelberg-Majorana interferometry

Effects of channel width variation on electrical characteristics of tri-gate Junctionless transistors

Separation of surface accumulation and bulk neutral channel in junctionless transistors

Phase-coherent quantum transport in silicon nanowires based on Wigner transport equation: Comparison with the nonequilibrium-Green-function formalism

Effect of strain on the electron effective mobility in biaxially strained silicon inversion layers: An experimental and theoretical analysis via atomic force microscopy measurements and Kubo-Greenwood mobility calculations

Very Low Temperature (Cyclic) Deposition / Etch of In-Situ Raised Sources and Drains

Aptasensors based on silicon nanowire field-effect transistors for electrical detection of thrombin

Influence of interface traps position along channel in the low-frequency noise of junctionless nanowire transistors

Channel-Width-Dependent Mobility Degradation in Bulk Conduction Regime of Tri-Gate Junctionless Transistors

Reduction of random telegraph noise by high-pressure deuterium annealing for p-type omega-gate nanowire FET

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