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Improvement of BiVO4 Photoanode Performance During Water Photo‐Oxidation Using Rh‐Doped SrTiO3 Perovskite as a Co‐Catalyst

Advanced functional materials, 2019-08, Vol.29 (32), p.n/a

2019

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Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO4 Photoanode by Doped Quantum Layers Modification

Small (Weinheim an der Bergstrasse, Germany), 2022-05, Vol.18 (21), p.e2200454-n/a

2022

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Photogenerated-carrier separation along edge dislocation of WO3 single-crystal nanoflower photoanode

Journal of materials chemistry. A, Materials for energy and sustainability, 2018, Vol.6 (18), p.8604-8611

2018

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Effect of Anode Material on the Sensitivity of GaN Schottky Barrier Diode Temperature Sensor

IEEE sensors journal, 2022-02, Vol.22 (3), p.1933-1938

2022

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Development of a bi-compound heterogeneous cocatalyst modified p-Si photocathode for boosting the photoelectrochemical water splitting performance

Journal of materials chemistry. A, Materials for energy and sustainability, 2021-04, Vol.9 (14), p.9157-9164

2021

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Correlation Between Anode Area and Sensitivity for the TiN/GaN Schottky Barrier Diode Temperature Sensor

IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.1171-1175

2020

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Fabrication of FTO–BiVO4–W–WO3 photoanode for improving photoelectrochemical performance: based on the Z-scheme electron transfer mechanism

Journal of materials chemistry. A, Materials for energy and sustainability, 2018, Vol.6 (27), p.12956-12961

2018

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Vertical GaN-Based Temperature Sensor by Using TiN Anode Schottky Barrier Diode

IEEE sensors journal, 2021-01, Vol.21 (2), p.1273-1278

2021

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Enhanced Sensitivity of GaN-Based Temperature Sensor by Using the Series Schottky Barrier Diode Structure

IEEE electron device letters, 2020-04, Vol.41 (4), p.601-604

2020

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Recessed Anode AlGaN/GaN Schottky Barrier Diode for Temperature Sensor Application

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.5162-5166

2021

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Normally-Off AlGaN/GaN Heterojunction Metal-Insulator-Semiconductor Field-Effect Transistors With Gate-First Process

IEEE electron device letters, 2019-02, Vol.40 (2), p.185-188

2019

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Fabrication of three dimensional diamond ultraviolet photodetector through down-top method

Applied physics letters, 2016-10, Vol.109 (15)

2016

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Monolayer WxMo1−xS2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors

Advanced functional materials, 2017-04, Vol.27 (13), p.n/a

2017

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p-NiO/n-GaN Heterostructure Diode for Temperature Sensor Application

IEEE sensors journal, 2020-01, Vol.20 (1), p.62-66

2020

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Novel Equivalent Current Model for GaN-Based High-Efficiency Microwave Rectification

IEEE transactions on microwave theory and techniques, 2024-04, Vol.72 (4), p.2310-2317

2024

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High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

IEEE transactions on electron devices, 2022-09, Vol.69 (9), p.4859-4863

2022

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High-Efficiency and High-Current GaN-Based Microwave Rectifier for Wireless Strain Sensing and Monitoring

IEEE transactions on microwave theory and techniques, 2023-02, Vol.71 (2), p.898-906

2023

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Terahertz Monolithic Integrated Cavity Filter Based on Cyclic Etched SiC Via-Holes

IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.311-317

2021

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MiRNA-155 Biosensors Based on AlGaN/GaN Heterojunction Field Effect Transistors With an Au-SH-RNA Probe Gate

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1860-1864

2023

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Vertical GaN Schottky barrier diodes on Ge-doped free-standing GaN substrates

Journal of alloys and compounds, 2019-04, Vol.780, p.476-481

2019

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GaN Schottky Barrier Diode-Based Wideband and Medium-Power Microwave Rectifier for Wireless Power Transmission

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4123-4129

2020

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Recessed AlGaN/GaN Schottky Barrier Diodes With TiN and NiN Dual Anodes

IEEE transactions on electron devices, 2021-06, Vol.68 (6), p.2867-2871

2021

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Optimization of the Photo‐Electrochemical Performance of Mo‐Doped BiVO4 Photoanode by Controlling the Metal–Oxygen Bond State on (020) Facet

Advanced materials interfaces, 2017-05, Vol.4 (10), p.n/a

2017

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Enhanced pH Sensitivity of AlGaN/GaN Ion-Sensitive Field-Effect Transistor by Recess Process and Ammonium Hydroxide Treatment

IEEE transactions on electron devices, 2021-03, Vol.68 (3), p.1250-1254

2021

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Terahertz monolithic integrated waveguide transmission lines based on wide bandgap semiconductor materials

Journal of applied physics, 2019-04, Vol.125 (15)

2019

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Improvement of BiVO4 Photoanode Performance During Water Photo‐Oxidation Using Rh‐Doped SrTiO3 Perovskite as a Co‐Catalyst

Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO4 Photoanode by Doped Quantum Layers Modification

Photogenerated-carrier separation along edge dislocation of WO3 single-crystal nanoflower photoanode

Effect of Anode Material on the Sensitivity of GaN Schottky Barrier Diode Temperature Sensor

Development of a bi-compound heterogeneous cocatalyst modified p-Si photocathode for boosting the photoelectrochemical water splitting performance

Correlation Between Anode Area and Sensitivity for the TiN/GaN Schottky Barrier Diode Temperature Sensor

Fabrication of FTO–BiVO4–W–WO3 photoanode for improving photoelectrochemical performance: based on the Z-scheme electron transfer mechanism

Vertical GaN-Based Temperature Sensor by Using TiN Anode Schottky Barrier Diode

Enhanced Sensitivity of GaN-Based Temperature Sensor by Using the Series Schottky Barrier Diode Structure

Recessed Anode AlGaN/GaN Schottky Barrier Diode for Temperature Sensor Application

Normally-Off AlGaN/GaN Heterojunction Metal-Insulator-Semiconductor Field-Effect Transistors With Gate-First Process

Fabrication of three dimensional diamond ultraviolet photodetector through down-top method

Monolayer WxMo1−xS2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors

p-NiO/n-GaN Heterostructure Diode for Temperature Sensor Application

Novel Equivalent Current Model for GaN-Based High-Efficiency Microwave Rectification

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

High-Efficiency and High-Current GaN-Based Microwave Rectifier for Wireless Strain Sensing and Monitoring

Terahertz Monolithic Integrated Cavity Filter Based on Cyclic Etched SiC Via-Holes

MiRNA-155 Biosensors Based on AlGaN/GaN Heterojunction Field Effect Transistors With an Au-SH-RNA Probe Gate

Vertical GaN Schottky barrier diodes on Ge-doped free-standing GaN substrates

GaN Schottky Barrier Diode-Based Wideband and Medium-Power Microwave Rectifier for Wireless Power Transmission

Recessed AlGaN/GaN Schottky Barrier Diodes With TiN and NiN Dual Anodes

Optimization of the Photo‐Electrochemical Performance of Mo‐Doped BiVO4 Photoanode by Controlling the Metal–Oxygen Bond State on (020) Facet

Enhanced pH Sensitivity of AlGaN/GaN Ion-Sensitive Field-Effect Transistor by Recess Process and Ammonium Hydroxide Treatment

Terahertz monolithic integrated waveguide transmission lines based on wide bandgap semiconductor materials

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