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Performance Enhancement of Silicon Nanowire Memory by Tunnel Oxynitride, Stacked Charge Trap Layer, and Mechanical Strain

IEEE electron device letters, 2012-01, Vol.33 (1), p.20-22

2012

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Stress Effects on Self-Aligned Silicon Nanowire Junctionless Field-Effect Transistors

IEEE electron device letters, 2011-09, Vol.32 (9), p.1194-1196

2011

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Super-lamination HZO/ZrO2/HZO of Ferroelectric Memcapacitors with Morphotropic Phase Boundary (MPB) for High Capacitive Ratio and Non-destructive Readout

IEEE electron device letters, 2024-10, p.1-1

2024

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High-gain InGaAlAs/InGaAs heterojunction bipolar transistors and phototransistors

IEEE electron device letters, 1991-12, Vol.12 (12), p.693-695

1991

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Direct-coupled FET logic circuits on InP

IEEE electron device letters, 1991-03, Vol.12 (3), p.98-100

1991

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Demonstration of a p-channel GaAs/AlGaAs BICFET

IEEE electron device letters, 1988-02, Vol.9 (2), p.84-86

1988

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Microwave performance of InGaAs/InAlAs/InP SISFETs

IEEE electron device letters, 1988-04, Vol.9 (4), p.162-164

1988

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Submicrometer self-aligned recessed gate InGaAs MISFET exhibiting very high transconductance

IEEE electron device letters, 1984-05, Vol.5 (5), p.169-171

1984

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An n-channel BICFET in the GaAs/AlGaAs material system

IEEE electron device letters, 1989-02, Vol.10 (2), p.88-90

1989

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An n-channel BICFET in the InGaAs/InAlGaAs/InAlAs material system

IEEE electron device letters, 1989-07, Vol.10 (7), p.304-306

1989

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A p-channel BICFET in the InGaAs/InAlAs material system

IEEE electron device letters, 1988-06, Vol.9 (6), p.278-280

1988

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Gate-length dependence of DC and microwave properties of submicrometer In/sub 0.53/Ga/sub 0.47/As HIGFETs

IEEE electron device letters, 1989-02, Vol.10 (2), p.70-72, Article 70

1989

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A novel process-compatible fluorination technique with electrical characteristic improvements of poly-Si TFTs

IEEE electron device letters, 2005-06, Vol.26 (6), p.372-374

2005

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Improvement of low-temperature gate dielectric formed in N2O plasma by an additional CF4 pretreatment process

IEEE electron device letters, 2002-07, Vol.23 (7), p.389-391

2002

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Semiconductor-gated InGaAs/InAlAs heterostructure transistors (SISFET's)

IEEE electron device letters, 1987-01, Vol.8 (1), p.33-35

1987

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High-performance highly strainedGa(0.23)In(0.77)As/Al(0.48)In(0.52)As MODFET' s obtained by selective and shallow etch guide recesstechniques

IEEE electron device letters, 1992-09, Vol.13 (9), p.451-453

1992

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High-performance highly strained Ga0.23In0.77As/Al0.48In0.52 As MODFET's obtained by selective and shallow etch gate recess techniques

IEEE electron device letters, 1992, Vol.13 (9), p.451-453

1992

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Ga sub(0.43)In sub(0.6)As/Al sub(0.55)In sub(0.45)As pseudomorphic modulation-doped field-effect transistors

IEEE electron device letters, 1987-01, Vol.EDL-8 (9), p.380-382

1987

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Gate-length dependence of DC and microwave properties ofsubmicrometer In(0.53)Ga(0.47)As HIGFETs

IEEE electron device letters, 1989-02, Vol.10 (2), p.70-72

1989

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Gate-length dependence of DC and microwave properties of submicrometer In sub(0.53)Ga sub(0.47)As HIGFET's

IEEE electron device letters, 1989-01, Vol.10 (2), p.70-72

1989

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Ga0.4In0.6As/Al0.55In0.45As pseudomorphic modulation-doped field-effect transistors

IEEE electron device letters, 1987-09, Vol.8 (9), p.380-382

1987

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Silicon oxide enhanced Schottky gate In(0.53)Ga(0.47)As FET's with a self-aligned recessed gate structure

IEEE electron device letters, 1984-12, Vol.EDL-5, p.511-514

1984

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Silicon Oxide enhanced Schottky gate In(0.53)Ga(0.47)As FET' s with a self-aligned recessed gate structure

IEEE electron device letters, 1984-12, Vol.5 (12), p.511-514

1984

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Silicon oxide enhanced Schottky gate In0.53Ga0.47AsFET's with a self-aligned recessed gate structure

IEEE electron device letters, 1984, Vol.5 (12), p.511-514

1984

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Silicon oxide enhanced Schottky gate In sub(0.53)Ga sub(0.47)As FET's with a self-aligned recessed gate structure

IEEE electron device letters, 1984-01, Vol.EDL-5 (12), p.511-514

1984

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Performance Enhancement of Silicon Nanowire Memory by Tunnel Oxynitride, Stacked Charge Trap Layer, and Mechanical Strain

Stress Effects on Self-Aligned Silicon Nanowire Junctionless Field-Effect Transistors

Super-lamination HZO/ZrO2/HZO of Ferroelectric Memcapacitors with Morphotropic Phase Boundary (MPB) for High Capacitive Ratio and Non-destructive Readout

High-gain InGaAlAs/InGaAs heterojunction bipolar transistors and phototransistors

Direct-coupled FET logic circuits on InP

Demonstration of a p-channel GaAs/AlGaAs BICFET

Microwave performance of InGaAs/InAlAs/InP SISFETs

Submicrometer self-aligned recessed gate InGaAs MISFET exhibiting very high transconductance

An n-channel BICFET in the GaAs/AlGaAs material system

An n-channel BICFET in the InGaAs/InAlGaAs/InAlAs material system

A p-channel BICFET in the InGaAs/InAlAs material system

Gate-length dependence of DC and microwave properties of submicrometer In/sub 0.53/Ga/sub 0.47/As HIGFETs

A novel process-compatible fluorination technique with electrical characteristic improvements of poly-Si TFTs

Improvement of low-temperature gate dielectric formed in N2O plasma by an additional CF4 pretreatment process

Semiconductor-gated InGaAs/InAlAs heterostructure transistors (SISFET's)

High-performance highly strainedGa(0.23)In(0.77)As/Al(0.48)In(0.52)As MODFET' s obtained by selective and shallow etch guide recesstechniques

High-performance highly strained Ga0.23In0.77As/Al0.48In0.52 As MODFET's obtained by selective and shallow etch gate recess techniques

Ga sub(0.43)In sub(0.6)As/Al sub(0.55)In sub(0.45)As pseudomorphic modulation-doped field-effect transistors

Gate-length dependence of DC and microwave properties ofsubmicrometer In(0.53)Ga(0.47)As HIGFETs

Gate-length dependence of DC and microwave properties of submicrometer In sub(0.53)Ga sub(0.47)As HIGFET's

Ga0.4In0.6As/Al0.55In0.45As pseudomorphic modulation-doped field-effect transistors

Silicon oxide enhanced Schottky gate In(0.53)Ga(0.47)As FET's with a self-aligned recessed gate structure

Silicon Oxide enhanced Schottky gate In(0.53)Ga(0.47)As FET' s with a self-aligned recessed gate structure

Silicon oxide enhanced Schottky gate In0.53Ga0.47AsFET's with a self-aligned recessed gate structure

Silicon oxide enhanced Schottky gate In sub(0.53)Ga sub(0.47)As FET's with a self-aligned recessed gate structure

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