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Structural and Transport Properties of the Weyl Semimetal NbAs at High Pressure

Chinese physics letters, 2015-09, Vol.32 (9), p.116-118

张骏刘峰良董金奎徐杨李娜娜杨文革李世燕

2015

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Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors

Chinese physics letters, 2017-03, Vol.34 (4), p.87-91

颜世莉谢志坚陈剑豪 Takashi Taniguchi Kenji Watanabe

2017

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Discovery of Two-Dimensional Quantum Spin Hall Effect in Triangular Transition-Metal Carbides

Chinese physics letters, 2018-08, Vol.35 (8), p.87303

2018

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Mechanism of Competition between Nutlin3 and p53 for Binding with Mdm2

Chinese physics letters, 2017-11, Vol.34 (11), p.123-127

2017

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Locking Function of a Key Residue in Kinesin's Gating Mechanism

Chinese physics letters, 2014-04, Vol.31 (4), p.48702-1-048702-5

2014

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Wavelength Extended InGaAsBi Detectors with Temperature-Insensitive Cutoff Wavelength

Chinese physics letters, 2018-07, Vol.35 (7), p.78501

2018

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Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio Trapping

Chinese physics letters, 2015-02, Vol.32 (2), p.28101-1-028101-4

2015

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The Third-Order Nonlinear Optical Properties in Cobalt-Doped ZnO Films

Chinese physics letters, 2015-07, Vol.32 (7), p.187-190

闫腾飞李莹康俊杰周鹏宇孙宝权张昆颜世申张新惠

2015

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Broad-Band FMR Linewidth of Co2MnSi Thin Films with Low Damping Factor： The Role of Two-Magnon Scattering

中国物理快报：英文版, 2016-04 (4), p.130-133

乔士柱任全年郝润润钟海康韵康仕寿于淑云韩广兵颜世申梅良模秦羽丰

2016

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Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer

Chinese physics letters, 2014-12, Vol.31 (12), p.128101-128101

2014

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Simulation of Plasma Disruptions for HL-2M with the DINA Code

Chinese physics letters, 2015-06, Vol.32 (6), p.118-121

薛雷段旭如郑国尧刘钺强晏石磊 DOKUKA V. V. KHAYRUTDINOV R. R. LUKASH V. E

2015

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Nano-Crystalline Diamond Films Grown by Radio-Frequency InductiVely Coupled Plasma Jet Enhanced Chemical Vapor Deposition

Chinese physics letters, 2015-08, Vol.32 (8), p.177-180

石彦超李佳君刘浩左勇刚白旸孙占峰马殿礼陈广超

2015

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Doping Evolution of the Superconducting Gap Structure in Heavily Hole-Doped Ba1-xKxFe2As2： a Heat Transport Study

中国物理快报：英文版, 2015-12 (12), p.131-134

洪晓晨王爱峰张震潘坚何兰坡罗习刚陈仙辉李世燕

2015

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Mapping the Diffusion Potential of a Reconstructed Au(111) Surface at Nanometer Scale with 2D Molecular Gas

Chinese physics letters, 2012-04, Vol.29 (4), p.46803-1-046803-3

2012

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Band Alignment and Band Gap Characterization of La2O3 Films on Si Substrates Grown by Radio Frequency Magnetron Sputtering

中国物理快报：英文版, 2014-02 (2), p.122-125

刘其娅方泽波冀婷刘士彦谭永胜谌家军朱燕艳

2014

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Characterization of Femtosecond Laser-Induced Plasma under Low Pressure in Argon

Chinese physics letters, 2015-03, Vol.32 (3), p.78-81

曹瑜刘小亮冼文多孙少华孙铭泽丁鹏基史彦超刘作业胡碧涛

2015

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Structural and Magnetic Properties of Co2MnSi Thin Film with a Low Damping Constant

中国物理快报：英文版, 2015-05 (5), p.134-137

乔士柱张洁秦羽丰郝润润钟海朱大鹏康韵康仕寿于淑云韩广兵颜世申梅良模

2015

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Structural Evolution during the Oxidation Process of Graphite

Chinese physics letters, 2014-07, Vol.31 (7), p.201-204

范冰冰郭焕焕张锐贾瑜史春燕

2014

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Nano-Crystalline Diamond Films with Pineapple-Like Morphology Grown by the DC Arcjet vapor Deposition Method

Chinese physics letters, 2014-08, Vol.31 (8), p.167-169

李彬张勤俭石彦超李佳君李宏吕反修陈广超

2014

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Ground States of Silicon-Multisubstituted Fullerene: First-Principles Calculations and Monte Carlo Simulations

Chinese physics letters, 2013-10, Vol.30 (10), p.106101-1-106101-4

2013

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High-Performance In0.23Ga0.77 As Channel MOSFETs with High Current Ratio Ion/Ioff Grown on Semi-insulating GaAs Substrates by MOCVD

Chinese physics letters, 2015-03, Vol.32 (3)

2015

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Hot Vertical-Displacement-Event Process due to Internal Energy Perturbations for HL-2M Tokamak Plasma

Chinese physics letters, 2016-05, Vol.33 (5), p.58-62

薛雷段旭如郑国尧刘钺强晏石磊 V. N. Dokuka V. E. Lukash R. R. Khayrutdinov

2016

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Visualization of a Maze-Like Reconstruction of Graphene on a Copper Surface at the Atomic Scale

Chinese physics letters, 2013-05, Vol.30 (5), p.56802-1-056802-4

2013

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Controlled Phase Gate Based on an Electron Floating on Helium

Chinese physics letters, 2011-05, Vol.28 (5), p.050302

2011

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Electric and Magnetic Field Tunable Rectification and Magnetoresistance in FexGe1−x/Ge Heterojunction Diodes

Chinese physics letters, 2011-10, Vol.28, p.107501

2011

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Structural and Transport Properties of the Weyl Semimetal NbAs at High Pressure

Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors

Discovery of Two-Dimensional Quantum Spin Hall Effect in Triangular Transition-Metal Carbides

Mechanism of Competition between Nutlin3 and p53 for Binding with Mdm2

Locking Function of a Key Residue in Kinesin's Gating Mechanism

Wavelength Extended InGaAsBi Detectors with Temperature-Insensitive Cutoff Wavelength

Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio Trapping

The Third-Order Nonlinear Optical Properties in Cobalt-Doped ZnO Films

Broad-Band FMR Linewidth of Co2MnSi Thin Films with Low Damping Factor： The Role of Two-Magnon Scattering

Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer

Simulation of Plasma Disruptions for HL-2M with the DINA Code

Nano-Crystalline Diamond Films Grown by Radio-Frequency InductiVely Coupled Plasma Jet Enhanced Chemical Vapor Deposition

Doping Evolution of the Superconducting Gap Structure in Heavily Hole-Doped Ba1-xKxFe2As2： a Heat Transport Study

Mapping the Diffusion Potential of a Reconstructed Au(111) Surface at Nanometer Scale with 2D Molecular Gas

Band Alignment and Band Gap Characterization of La2O3 Films on Si Substrates Grown by Radio Frequency Magnetron Sputtering

Characterization of Femtosecond Laser-Induced Plasma under Low Pressure in Argon

Structural and Magnetic Properties of Co2MnSi Thin Film with a Low Damping Constant

Structural Evolution during the Oxidation Process of Graphite

Nano-Crystalline Diamond Films with Pineapple-Like Morphology Grown by the DC Arcjet vapor Deposition Method

Ground States of Silicon-Multisubstituted Fullerene: First-Principles Calculations and Monte Carlo Simulations

High-Performance In0.23Ga0.77 As Channel MOSFETs with High Current Ratio Ion/Ioff Grown on Semi-insulating GaAs Substrates by MOCVD

Hot Vertical-Displacement-Event Process due to Internal Energy Perturbations for HL-2M Tokamak Plasma

Visualization of a Maze-Like Reconstruction of Graphene on a Copper Surface at the Atomic Scale

Controlled Phase Gate Based on an Electron Floating on Helium

Electric and Magnetic Field Tunable Rectification and Magnetoresistance in FexGe1−x/Ge Heterojunction Diodes

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