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Effect of nonmagnetic substituent Zn on the phase competition and multiferroic properties in the polar magnet Fe2Mo3O8

Applied physics letters, 2021-03, Vol.118 (11)

2021

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Scanning Hall probe microscopy

Applied physics letters, 1992-10, Vol.61 (16), p.1974-1976

1992

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Direct demonstration of a misfit strain-generated electric field in a [111] growth axis zinc-blende heterostructure

Applied physics letters, 1990-02, Vol.56 (7), p.659-661

1990

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Molecular beam epitaxial growth of InGaAlAs/InGaAs heterojunction bipolar transistors on highly resistive low temperature InAlAs epilayers

Applied physics letters, 1992-12, Vol.61 (23), p.2796-2798

1992

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Partial ordering and enhanced mobility in Ga0.47In0.53As grown on vicinal (110)InP

Applied physics letters, 1991-03, Vol.58 (9), p.968-970

1991

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Optical reading of field-effect transistors by phase-space absorption quenching in a single InGaAs quantum well conducting channel

Applied physics letters, 1987-03, Vol.50 (10), p.585-587

1987

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Molecular beam epitaxial growth of the II-V semiconductor compound Zn3As2

Applied physics letters, 1986-12, Vol.49 (24), p.1665-1667

1986

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Electroabsorption and refraction by electron transfer in asymmetric modulation-doped multiple quantum well structures

Applied physics letters, 1989-08, Vol.55 (6), p.583-585

1989

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High quality In0.53Ga0.47As Schottky diode formed by graded superlattice of In0.53Ga0.47As/In0.52Al0.48As

Applied physics letters, 1989-05, Vol.54 (19), p.1863-1865

1989

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Broadband Bragg filter in microfabricated AlGaAs waveguides

Applied physics letters, 1996-01, Vol.68 (2), p.241-243

1996

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Observation of room-temperature blue shift and bistability in a strained InGaAs-GaAs 〈111〉 self-electro-optic effect device

Applied physics letters, 1990-02, Vol.56 (8), p.715-717

1990

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Single heterostructures for optical transport experiments

Applied physics letters, 1987-11, Vol.51 (22), p.1815-1817

1987

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Observation of room-temperature blue shift and bistability in a strained inGaAs-GaAs self-electro-optic effect device

Applied physics letters, 1990-02, Vol.56 (8), p.715-717

1990

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Beryllium implantation doping of InGaAs

Applied physics letters, 1984-02, Vol.44 (4), p.438-440

1984

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Multiple quantum well passive mode locking of a NaCl color center laser

Applied physics letters, 1989-03, Vol.54 (13), p.1203-1205

1989

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Off-resonant infrared laser action in NH3 and C2H4 without population inversion

Applied physics letters, 1976-12, Vol.29 (11), p.725-727

1976

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Resonant-cavity InGaAlAs/InGaAs/InAlAs phototransistors with high gain for 1.3–1.6 μm

Applied physics letters, 1992-02, Vol.60 (8), p.929-931

1992

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Optoelectronic transient response of the self-aligned double-heterostructure optoelectronic switch

Applied physics letters, 1988-11, Vol.53 (19), p.1797-1799

1988

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Optically pumped 33-atm CO2 laser

Applied physics letters, 1973-10, Vol.23 (7), p.370-372

1973

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Measurement of the conduction-band discontinuity in pseudomorphic InxGa1-xAs/In0.52Al0.48As heterostructures

Applied physics letters, 1992-02, Vol.60 (6), p.733-735

1992

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Measurement of multigigahertz waveforms and propagation delays in modulation-doped field-effect transistors using phase-space absorption quenching

Applied physics letters, 1989-09, Vol.55 (11), p.1109-1111

1989

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In0.53Ga0.47As n -channel native oxide inversion mode field-effect transistor

Applied physics letters, 1982-08, Vol.41 (3), p.280-282

1982

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Multi-gigahertz-bandwidth intensity modulators using tunable-electron-density multiple quantum well waveguides

Applied physics letters, 1991-07, Vol.59 (2), p.201-203

1991

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Optical waveguide intensity modulators based on a tunable electron density multiple quantum well structure

Applied physics letters, 1990-05, Vol.56 (20), p.1951-1953

1990

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Optical transfer 42-atm N2O laser

Applied physics letters, 1974-02, Vol.24 (4), p.182-183

1974

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Effect of nonmagnetic substituent Zn on the phase competition and multiferroic properties in the polar magnet Fe2Mo3O8

Scanning Hall probe microscopy

Direct demonstration of a misfit strain-generated electric field in a [111] growth axis zinc-blende heterostructure

Molecular beam epitaxial growth of InGaAlAs/InGaAs heterojunction bipolar transistors on highly resistive low temperature InAlAs epilayers

Partial ordering and enhanced mobility in Ga0.47In0.53As grown on vicinal (110)InP

Optical reading of field-effect transistors by phase-space absorption quenching in a single InGaAs quantum well conducting channel

Molecular beam epitaxial growth of the II-V semiconductor compound Zn3As2

Electroabsorption and refraction by electron transfer in asymmetric modulation-doped multiple quantum well structures

High quality In0.53Ga0.47As Schottky diode formed by graded superlattice of In0.53Ga0.47As/In0.52Al0.48As

Broadband Bragg filter in microfabricated AlGaAs waveguides

Observation of room-temperature blue shift and bistability in a strained InGaAs-GaAs 〈111〉 self-electro-optic effect device

Single heterostructures for optical transport experiments

Observation of room-temperature blue shift and bistability in a strained inGaAs-GaAs self-electro-optic effect device

Beryllium implantation doping of InGaAs

Multiple quantum well passive mode locking of a NaCl color center laser

Off-resonant infrared laser action in NH3 and C2H4 without population inversion

Resonant-cavity InGaAlAs/InGaAs/InAlAs phototransistors with high gain for 1.3–1.6 μm

Optoelectronic transient response of the self-aligned double-heterostructure optoelectronic switch

Optically pumped 33-atm CO2 laser

Measurement of the conduction-band discontinuity in pseudomorphic InxGa1-xAs/In0.52Al0.48As heterostructures

Measurement of multigigahertz waveforms and propagation delays in modulation-doped field-effect transistors using phase-space absorption quenching

In0.53Ga0.47As n -channel native oxide inversion mode field-effect transistor

Multi-gigahertz-bandwidth intensity modulators using tunable-electron-density multiple quantum well waveguides

Optical waveguide intensity modulators based on a tunable electron density multiple quantum well structure

Optical transfer 42-atm N2O laser

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