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Ultra-Low Noise Defect Probing Instrument for Defect Spectroscopy of MOS Transistors

IEEE transactions on device and materials reliability, 2020-06, Vol.20 (2), p.242-250

Waltl, Michael

2020

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IEEE_Xplore

Aging and Sintered Layer Defect Detection of Discrete MOSFETs Using Frequency Domain Reflectometry Associated With Parasitic Resistance

IEEE transactions on device and materials reliability, 2024-03, Vol.24 (1), p.1-1

2024

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IEEE_Xplore

Machine Learning Approach for Prediction of Point Defect Effect in FinFET

IEEE transactions on device and materials reliability, 2021-06, Vol.21 (2), p.252-257

2021

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IEEE_Xplore

Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO2Transistors

IEEE transactions on device and materials reliability, 2023-09, Vol.23 (3), p.355

2023

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LCHC-DFT: A Low-Cost High-Coverage Design-for-Testability Technique to Detect Hard-to-Detect Faults in STT-MRAMs in the Presence of Process Variations

IEEE transactions on device and materials reliability, 2022-12, Vol.22 (4), p.477-487

2022

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IEEE_Xplore

Assessing AMS-RF Test Quality by Defect Simulation

IEEE transactions on device and materials reliability, 2019-03, Vol.19 (1), p.55-63

2019

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IEEE_Xplore

Extraction of Statistical Gate Oxide Parameters From Large MOSFET Arrays

IEEE transactions on device and materials reliability, 2020-06, Vol.20 (2), p.251-257

2020

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IEEE_Xplore

CD-DFT: A Current-Difference Design-for-Testability to Detect Short Defects of STT-MRAM Under Process Variations

IEEE transactions on device and materials reliability, 2021-09, Vol.21 (3), p.436-443

2021

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IEEE_Xplore

Online Calculation of the Increase in Thermal Resistance Caused by Solder Fatigue for IGBT Modules

IEEE transactions on device and materials reliability, 2017-12, Vol.17 (4), p.785-794

2017

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IEEE_Xplore

Did You Really Test That Interlock?: The Importance of Early Identification of Defects

IEEE industry applications magazine, 2024-07, Vol.30 (4), p.69-74

Sullivan, Paul B.

2024

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IEEE_Xplore

Cell-Aware Defect Diagnosis of Customer Returns Based on Supervised Learning

IEEE transactions on device and materials reliability, 2020-06, Vol.20 (2), p.329-340

2020

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IEEE_Xplore

Procedural Defect Modeling for Virtual Surface Inspection Environments

IEEE computer graphics and applications, 2023-03, Vol.PP (2), p.1-10

2023

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IEEE_Xplore

Correlation Study of Bulk Si Stress and Lithography Defects Using Polarized Stress Imager

IEEE transactions on device and materials reliability, 2020-03, Vol.20 (1), p.221-223

2020

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IEEE_Xplore

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

IEEE transactions on device and materials reliability, 2018-09, Vol.18 (3), p.364-376

2018

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IEEE_Xplore

Failure Characterization of Carbon Nanotube FETs Under Process Variations: Technology Scaling Issues

IEEE transactions on device and materials reliability, 2016-06, Vol.16 (2), p.164-171

2016

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IEEE_Xplore

Single Pulse Charge Pumping Technique Improvement for Interface-States Profiling in the Channel of MOSFET Devices

IEEE transactions on device and materials reliability, 2023-12, Vol.23 (4), p.521-529

2023

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IEEE_Xplore

Overview of Bias Temperature Instability in Scaled DRAM Logic for Memory Transistors

IEEE transactions on device and materials reliability, 2020-06, Vol.20 (2), p.258-268

2020

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IEEE_Xplore

Through Silicon Via Reliability

IEEE transactions on device and materials reliability, 2012-06, Vol.12 (2), p.285-295

2012

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IEEE_Xplore

Universal Dielectric Breakdown Modeling Under Off-State TDDB for Ultra-Scaled Device From 130nm to 28nm Nodes and Beyond

IEEE transactions on device and materials reliability, 2024, Vol.24 (2), p.174-183

2024

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IEEE_Xplore

Degradation of UV-A LEDs: Physical Origin and Dependence on Stress Conditions

IEEE transactions on device and materials reliability, 2016-06, Vol.16 (2), p.213-219

2016

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IEEE_Xplore

Unveiling the Failure Mechanism of Electrical Interconnection in Thermal-Aged PV Modules

IEEE transactions on device and materials reliability, 2020-03, Vol.20 (1), p.24-32

2020

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IEEE_Xplore

Qualitative and Quantitative Diagnostic Device for Detecting Defects in Crystalline Silicon PV Cells

IEEE transactions on device and materials reliability, 2021-12, Vol.21 (4), p.647-657

de Carvalho Neto, Jo ao T.

2021

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IEEE_Xplore

Reliability of Highly Stable Amorphous-Silicon Thin-Film Transistors Under Low Gate-Field Stress-Part I: Two-Stage Model for Lifetime Prediction

IEEE transactions on device and materials reliability, 2016-06, Vol.16 (2), p.243-254

2016

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IEEE_Xplore

Test and Repair Methodology for FinFET-Based Memories

IEEE transactions on device and materials reliability, 2015-03, Vol.15 (1), p.3-9

2015

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IEEE_Xplore

Nondestructive and Quantitative Evaluation of a GaAs Epitaxial Layer Covered with a Silicon Nitride Insulating Thin Film after a Highly Accelerated Temperature and Humidity Stress with the use of Photoreflectance Spectroscopy

IEEE transactions on device and materials reliability, 2023-03, Vol.23 (1), p.1-1

Takeuchi, Hideo

2023

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Ultra-Low Noise Defect Probing Instrument for Defect Spectroscopy of MOS Transistors

Aging and Sintered Layer Defect Detection of Discrete MOSFETs Using Frequency Domain Reflectometry Associated With Parasitic Resistance

Machine Learning Approach for Prediction of Point Defect Effect in FinFET

Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO2Transistors

LCHC-DFT: A Low-Cost High-Coverage Design-for-Testability Technique to Detect Hard-to-Detect Faults in STT-MRAMs in the Presence of Process Variations

Assessing AMS-RF Test Quality by Defect Simulation

Extraction of Statistical Gate Oxide Parameters From Large MOSFET Arrays

CD-DFT: A Current-Difference Design-for-Testability to Detect Short Defects of STT-MRAM Under Process Variations

Online Calculation of the Increase in Thermal Resistance Caused by Solder Fatigue for IGBT Modules

Did You Really Test That Interlock?: The Importance of Early Identification of Defects

Cell-Aware Defect Diagnosis of Customer Returns Based on Supervised Learning

Procedural Defect Modeling for Virtual Surface Inspection Environments

Correlation Study of Bulk Si Stress and Lithography Defects Using Polarized Stress Imager

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Failure Characterization of Carbon Nanotube FETs Under Process Variations: Technology Scaling Issues

Single Pulse Charge Pumping Technique Improvement for Interface-States Profiling in the Channel of MOSFET Devices

Overview of Bias Temperature Instability in Scaled DRAM Logic for Memory Transistors

Through Silicon Via Reliability

Universal Dielectric Breakdown Modeling Under Off-State TDDB for Ultra-Scaled Device From 130nm to 28nm Nodes and Beyond

Degradation of UV-A LEDs: Physical Origin and Dependence on Stress Conditions

Unveiling the Failure Mechanism of Electrical Interconnection in Thermal-Aged PV Modules

Qualitative and Quantitative Diagnostic Device for Detecting Defects in Crystalline Silicon PV Cells

Reliability of Highly Stable Amorphous-Silicon Thin-Film Transistors Under Low Gate-Field Stress-Part I: Two-Stage Model for Lifetime Prediction

Test and Repair Methodology for FinFET-Based Memories

Nondestructive and Quantitative Evaluation of a GaAs Epitaxial Layer Covered with a Silicon Nitride Insulating Thin Film after a Highly Accelerated Temperature and Humidity Stress with the use of Photoreflectance Spectroscopy

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