UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

A 0.0025mm2 8-bit 70MS/s SAR ADC with a Linearity-Improved Bootstrapped Switch for Computation in Memory

2023 8th International Conference on Integrated Circuits and Microsystems (ICICM), 2023, p.412-416

2023

Link zum Volltext

A 0.009mm2, 0-230mA Wide-range Load Current Output Capacitor-less Low Dropout Regulator for High Bandwidth Memory parallel IOs

2022 35th International Conference on VLSI Design and 2022 21st International Conference on Embedded Systems (VLSID), 2022, p.6-10

2022

Link zum Volltext
IEEE_Xplore

A 0.02mm super(2) embedded temperature sensor with plus or minus 2 degree C inaccuracy for self-refresh control in 25nm mobile DRAM

Proceedings of ESSCIRC, 2015-09, p.267-270

2015

Link zum Volltext

Verfügbarkeit prüfen

A 0.02mm2 embedded temperature sensor with ±2°C inaccuracy for self-refresh control in 25nm mobile DRAM

ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC), 2015, p.267-270

2015

Link zum Volltext
IEEE_Xplore

A 0.05- ^ 2.91-nJ/Decision Keyword-Spotting (KWS) Chip Featuring an Always-Retention 5T-SRAM in 28-nm CMOS

IEEE journal of solid-state circuits, 2023-07, p.1-10

2023

Link zum Volltext
IEEE_Xplore

A 0.05-mm2 2.91-nJ/Decision Keyword-Spotting (KWS) Chip Featuring an Always-Retention 5T-SRAM in 28-nm CMOS

IEEE journal of solid-state circuits, 2024-02, Vol.59 (2), p.626

2024

Link zum Volltext

Verfügbarkeit prüfen

A 0.078 pJ/SOP Unstructured Sparsity-Aware Spiking Attention/Convolution Processor with 3D Compute Array

2024 IEEE Custom Integrated Circuits Conference (CICC), 2024, p.1-2

2024

Link zum Volltext
IEEE_Xplore

A 0.08 /spl mu/m/sup 2/-sized 8F/sup 2/ stack DRAM cell for multi-gigabit DRAM

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303), 2002, p.56-57

2002

Link zum Volltext
IEEE_Xplore

A 0.08μm2-sized 8F2 Stack DRAM cell for multi-gigabit DRAM

2002

Link zum Volltext

Verfügbarkeit prüfen

A 0.094um super(2) high density and aging resilient 8T SRAM with 14nm FinFET technology featuring 560mV V sub(MIN) with read and write assist

2015 Symposium on VLSI Circuits (VLSI Circuits), 2015-06, p.C266-C267

2015

Link zum Volltext

Verfügbarkeit prüfen

A 0.094um2 high density and aging resilient 8T SRAM with 14nm FinFET technology featuring 560mV VMIN with read and write assist

2015 Symposium on VLSI Circuits (VLSI Circuits), 2015, p.C266-C267

2015

Link zum Volltext
IEEE_Xplore

A 0.1/spl mu/A standby current, bouncing-noise-immune 1Mb SRAM

Symposium 1988 on VLSI Circuits, 1988, p.49-50

1988

Link zum Volltext

Verfügbarkeit prüfen

0.1 /spl mu/m-rule MRAM development using double-layered hard mask

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 2001, p.36.4.1-36.4.4

2001

Link zum Volltext
IEEE_Xplore

0.11-2.5 GHz All-digital DLL for Mobile Memory Interface with Phase Sampling Window Adaptation to Reduce Jitter Accumulation

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2017, 17(3), 75, pp.411-424

2017

Link zum Volltext

Verfügbarkeit prüfen

A 0.11 pJ/Op, 0.32-128 TOPS, Scalable Multi-Chip-Module-based Deep Neural Network Accelerator with Ground-Reference Signaling in 16nm

2019 Symposium on VLSI Circuits, 2019, p.C300-C301

2019

Link zum Volltext
IEEE_Xplore

A 0.11 /spl mu/m DRAM technology for 4Gb DRAM and beyond

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443), 2001, Vol.1, p.178-182 vol.1

2001

Link zum Volltext
IEEE_Xplore

A 0.115 /spl mu/m/sup 2/ 8F/sup 2/ DRAM working cell with LPRD (low parasitic resistance device) and poly metal gate technology for gigabit DRAM

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184), 2001, p.25-26

2001

Link zum Volltext
IEEE_Xplore

A 0.11pJ/bit read energy embedded NanoBridge non-volatile memory and its integration in a 28 nm 32 bit RISC-V microcontroller units

Japanese Journal of Applied Physics, 2024-02, Vol.63 (2), p.2

2024

Link zum Volltext

Verfügbarkeit prüfen

A 0.123% Stevia/Aspartame 91/9 Aqueous Solution Balances the Effects of the Two Substances, and may thus be a Safer and Tastier Sweetener to be Used

Journal of Pharmacy and Nutrition Sciences, 2016, Vol.5 (4), p.236-248

2016

Link zum Volltext

Verfügbarkeit prüfen

0.13 mu m METAL-OXIDE-NITRIDE-OXIDE-SEMICONDUCTOR SINGLE TRANSISTOR MEMORY CELL WITH SEPARATED SOURCE LINE

Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 2A, pp. 417-423. 2000, 2000, Vol.39 (2A), p.417-423

2000

Link zum Volltext

Verfügbarkeit prüfen

A 0.13-/spl mu/m, 0.78-/spl mu/m/sup 2/ low-power four-transistor SRAM cell with a vertically stacked poly-silicon MOS and a dual-word-voltage scheme

2004 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.04CH37525), 2004, p.60-63

2004

Link zum Volltext
IEEE_Xplore

A 0.13 /spl mu/m CMOS platform with Cu/low-k interconnects for system on chip applications

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184), 2001, p.101-102

2001

Link zum Volltext
IEEE_Xplore

A 0.13 /spl mu/m CMOS technology integrating high-speed and low-power/high-density devices with two different well/channel structures

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), 1999, p.667-670

1999

Link zum Volltext
IEEE_Xplore

A 0.13 /spl mu/m CMOS technology with 193 nm lithography and Cu/low-k for high performance applications

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138), 2000, p.563-566

2000

Link zum Volltext
IEEE_Xplore

A 0.13 /spl mu/m DRAM technology for giga bit density stand-alone and embedded DRAMs

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104), 2000, p.10-11

2000

Link zum Volltext
IEEE_Xplore

1 – 25 von 365.088

Suche als RSS-Feed

Aktive Filter

KollektionEBSCOhost Business Source Ultimate

KollektionIngentaConnect website

PublikationsformBücher

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(196.742)
Mit Volltextzugriff
(279.589)

Publikationsform

11 weitere anzeigen...

Weniger anzeigen...

Sprache

Englisch
(345.487)
Japanisch
(25.527)
Spanisch
(5.067)
Französisch
(3.902)
Deutsch
(2.916)
Portugiesisch
(2.707)
Russisch
(2.150)
Chinesisch
(1.251)
Polnisch
(1.110)
Italienisch
(670)
Türkisch
(549)
Croatian
(277)
Tschechisch
(232)
Niederländisch
(194)
Koreanisch
(161)
Katalanisch
(151)
Norwegisch
(142)
Ungarisch
(132)
Slowakisch
(116)
Bulgarisch
(114)

15 weitere anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Thema

Science & Technology
(150.712)
Memory
(139.959)
Life Sciences & Biomedicine
(74.765)
Humans
(65.918)
Technology
(63.125)
Social Sciences
(48.217)
Male
(44.733)
Psychology
(42.493)
Computer Science
(37.692)
Female
(37.604)
Animals
(34.604)
Engineering
(32.550)
Random Access Memory
(28.393)
Neurosciences
(28.387)
Neurosciences & Neurology
(27.864)
Engineering, Electrical & Electronic
(26.149)
Biological And Medical Sciences
(24.505)
Adult
(21.382)
Physical Sciences
(19.426)
Psychology. Psychoanalysis. Psychiatry
(17.025)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

EZB Electronic Journals Library
(92.329)
MEDLINE
(92.105)
IEEE/IET Electronic Library (IEL)
(67.191)
Journals@Ovid Complete
(61.926)
JSTOR All Journals
(40.502)
Standalone journals
(38.430)
Wiley Online Library Journals Frontfile Complete
(35.654)
SpringerLink
(29.245)
Wiley Online Library
(28.000)
Ebook Central Perpetual and DDA
(21.707)
eBooks on EBSCOhost
(20.874)
SpringerLINK Contemporary (Konsortium Baden-Württemberg)
(20.201)
Nexis Uni
(16.409)
EBSCOhost APA PsycARTICLES
(15.695)
Elsevier ScienceDirect Journals Complete
(13.760)
Springer Books
(12.220)
ACM Digital Library Complete
(12.047)
Project Muse All Journals
(12.026)
EBSCOhost Psychology and Behavioral Sciences Collection
(11.081)
Project MUSE
(10.961)
IngentaConnect
(0)

16 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

Proceedings Of The National Academy Of Sciences - Pnas
(2.926)
The Journal Of Immunology
(2.363)
Journal Of Experimental Psychology
(2.310)
Science
(1.859)
Business Wire
(1.831)
Psychonomic Bulletin & Review
(1.523)
Pr Newswire
(1.510)
The American Journal Of Psychology
(1.459)
Applied Cognitive Psychology
(1.404)
Behavioral Neuroscience
(1.368)

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

Menü

Weitere Dienste

Einstellungen

A 0.0025mm2 8-bit 70MS/s SAR ADC with a Linearity-Improved Bootstrapped Switch for Computation in Memory

A 0.009mm2, 0-230mA Wide-range Load Current Output Capacitor-less Low Dropout Regulator for High Bandwidth Memory parallel IOs

A 0.02mm super(2) embedded temperature sensor with plus or minus 2 degree C inaccuracy for self-refresh control in 25nm mobile DRAM

A 0.02mm2 embedded temperature sensor with ±2°C inaccuracy for self-refresh control in 25nm mobile DRAM

A 0.05- ^ 2.91-nJ/Decision Keyword-Spotting (KWS) Chip Featuring an Always-Retention 5T-SRAM in 28-nm CMOS

A 0.05-mm2 2.91-nJ/Decision Keyword-Spotting (KWS) Chip Featuring an Always-Retention 5T-SRAM in 28-nm CMOS

A 0.078 pJ/SOP Unstructured Sparsity-Aware Spiking Attention/Convolution Processor with 3D Compute Array

A 0.08 /spl mu/m/sup 2/-sized 8F/sup 2/ stack DRAM cell for multi-gigabit DRAM

A 0.08μm2-sized 8F2 Stack DRAM cell for multi-gigabit DRAM

A 0.094um super(2) high density and aging resilient 8T SRAM with 14nm FinFET technology featuring 560mV V sub(MIN) with read and write assist

A 0.094um2 high density and aging resilient 8T SRAM with 14nm FinFET technology featuring 560mV VMIN with read and write assist

A 0.1/spl mu/A standby current, bouncing-noise-immune 1Mb SRAM

0.1 /spl mu/m-rule MRAM development using double-layered hard mask

0.11-2.5 GHz All-digital DLL for Mobile Memory Interface with Phase Sampling Window Adaptation to Reduce Jitter Accumulation

A 0.11 pJ/Op, 0.32-128 TOPS, Scalable Multi-Chip-Module-based Deep Neural Network Accelerator with Ground-Reference Signaling in 16nm

A 0.11 /spl mu/m DRAM technology for 4Gb DRAM and beyond

A 0.115 /spl mu/m/sup 2/ 8F/sup 2/ DRAM working cell with LPRD (low parasitic resistance device) and poly metal gate technology for gigabit DRAM

A 0.11pJ/bit read energy embedded NanoBridge non-volatile memory and its integration in a 28 nm 32 bit RISC-V microcontroller units

A 0.123% Stevia/Aspartame 91/9 Aqueous Solution Balances the Effects of the Two Substances, and may thus be a Safer and Tastier Sweetener to be Used

0.13 mu m METAL-OXIDE-NITRIDE-OXIDE-SEMICONDUCTOR SINGLE TRANSISTOR MEMORY CELL WITH SEPARATED SOURCE LINE

A 0.13-/spl mu/m, 0.78-/spl mu/m/sup 2/ low-power four-transistor SRAM cell with a vertically stacked poly-silicon MOS and a dual-word-voltage scheme

A 0.13 /spl mu/m CMOS platform with Cu/low-k interconnects for system on chip applications

A 0.13 /spl mu/m CMOS technology integrating high-speed and low-power/high-density devices with two different well/channel structures

A 0.13 /spl mu/m CMOS technology with 193 nm lithography and Cu/low-k for high performance applications

A 0.13 /spl mu/m DRAM technology for giga bit density stand-alone and embedded DRAMs

Aktive Filter

Suchergebnisse filtern