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Multilevel HfO2-based RRAM devices for low-power neuromorphic networks

APL materials, 2019-08, Vol.7 (8), p.081120-081120-10

2019

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Plasma-enhanced chemical vapor deposition of amorphous Si on graphene

Applied physics letters, 2016-05, Vol.108 (19)

2016

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Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes

Journal of applied physics, 2017-06, Vol.121 (24)

2017

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Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

Journal of applied physics, 2009-06, Vol.105 (11)

2009

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Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material

Thin solid films, 2012-05, Vol.520 (14), p.4551-4555

2012

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Band alignment and electron traps in Y2O3 layers on (100)Si

Applied physics letters, 2009-09, Vol.95 (13)

2009

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Spherical top data system (STDS) software for the simulation of spherical top spectra

Journal of quantitative spectroscopy & radiative transfer, 1998-03, Vol.59 (3), p.471-480

1998

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Properties of atomic-vapor and atomic-layer deposited Sr, Ti, and Nb doped Ta2O5 Metal–Insulator–Metal capacitors

Thin solid films, 2012-05, Vol.520 (14), p.4576-4579

2012

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High resolution spectroscopy and the first global analysis of the Tetradecad region of methane 12CH4

Physical chemistry chemical physics : PCCP, 2013, Vol.15 (25), p.10071-10093

2013

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Tutorial: Concepts for closely mimicking biological learning with memristive devices: Principles to emulate cellular forms of learning

Journal of applied physics, 2018-10, Vol.124 (15)

2018

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Reduction of the Cell-to-Cell Variability in Hf1-xAlxOy Based RRAM Arrays by Using Program Algorithms

IEEE electron device letters, 2017-02, Vol.38 (2), p.175-178

2017

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Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2−xO3 (x=0–2) dielectrics on TiN for dynamic random access memory applications

Journal of applied physics, 2007-07, Vol.102 (1)

2007

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On the epitaxy of twin-free cubic (111) praseodymium sesquioxide films on Si(111)

Journal of applied physics, 2006-01, Vol.99 (1)

2006

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Structure and thermal stability of graded Ta-TaN diffusion barriers between Cu and SiO2

Thin solid films, 2003-08, Vol.437 (1-2), p.248-256

2003

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Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al:HfO2/TiN RRAMs

Microelectronic engineering, 2019-06, Vol.214, p.104-109

2019

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Thin BaHfO3 high-k dielectric layers on TiN for memory capacitor applications

Applied physics letters, 2008-02, Vol.92 (6)

2008

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Self-calibrating highly sensitive dynamic capacitance sensor: towards rapid sensing and counting of particles in laminar flow systems

Analyst (London), 2015-05, Vol.14 (9), p.3262-3272

2015

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First investigation of metal–insulator–metal (MIM) capacitor using Pr2O3 dielectrics

Materials science in semiconductor processing, 2004-01, Vol.7 (4-6), p.227-230

2004

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MIM capacitors using amorphous high-k PrTixOy dielectrics

Microelectronic engineering, 2005-06, Vol.80, p.313-316

2005

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Reduction of the Cell-to-Cell Variability in Hf 1-x Al x O y Based RRAM Arrays by Using Program Algorithms

IEEE electron device letters, 2017-02, Vol.38 (2), p.175-178

2017

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Label free sensing of creatinine using a 6 GHz CMOS near-field dielectric immunosensor

Analyst (London), 2015-05, Vol.14 (9), p.319-327

2015

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Performance Assessment of Amorphous HfO 2 -Based RRAM Devices for Neuromorphic Applications

ECS journal of solid state science and technology, 2021-08, Vol.10 (8), p.83002

2021

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Demonstration of a graphene-base heterojunction transistor with saturated output current

Journal of applied physics, 2019-06, Vol.125 (23)

2019

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Assessing the forming temperature role on amorphous and polycrystalline HfO2-based 4kbit RRAM arrays performance

Microelectronic engineering, 2017-06, Vol.178, p.1-4

2017

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HfO2, Sr-Ta-O and Ti-Ta-O High-k Dielectrics for Metal-Insulator-Metal Applications

Journal of the Electrochemical Society, 2011, Vol.158 (5), p.G119

2011

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Multilevel HfO2-based RRAM devices for low-power neuromorphic networks

Plasma-enhanced chemical vapor deposition of amorphous Si on graphene

Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes

Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material

Band alignment and electron traps in Y2O3 layers on (100)Si

Spherical top data system (STDS) software for the simulation of spherical top spectra

Properties of atomic-vapor and atomic-layer deposited Sr, Ti, and Nb doped Ta2O5 Metal–Insulator–Metal capacitors

High resolution spectroscopy and the first global analysis of the Tetradecad region of methane 12CH4

Tutorial: Concepts for closely mimicking biological learning with memristive devices: Principles to emulate cellular forms of learning

Reduction of the Cell-to-Cell Variability in Hf1-xAlxOy Based RRAM Arrays by Using Program Algorithms

Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2−xO3 (x=0–2) dielectrics on TiN for dynamic random access memory applications

On the epitaxy of twin-free cubic (111) praseodymium sesquioxide films on Si(111)

Structure and thermal stability of graded Ta-TaN diffusion barriers between Cu and SiO2

Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al:HfO2/TiN RRAMs

Thin BaHfO3 high-k dielectric layers on TiN for memory capacitor applications

Self-calibrating highly sensitive dynamic capacitance sensor: towards rapid sensing and counting of particles in laminar flow systems

First investigation of metal–insulator–metal (MIM) capacitor using Pr2O3 dielectrics

MIM capacitors using amorphous high-k PrTixOy dielectrics

Reduction of the Cell-to-Cell Variability in Hf 1-x Al x O y Based RRAM Arrays by Using Program Algorithms

Label free sensing of creatinine using a 6 GHz CMOS near-field dielectric immunosensor

Performance Assessment of Amorphous HfO 2 -Based RRAM Devices for Neuromorphic Applications

Demonstration of a graphene-base heterojunction transistor with saturated output current

Assessing the forming temperature role on amorphous and polycrystalline HfO2-based 4kbit RRAM arrays performance

HfO2, Sr-Ta-O and Ti-Ta-O High-k Dielectrics for Metal-Insulator-Metal Applications

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