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Inactive (PbI2)2RbCl stabilizes perovskite films for efficient solar cells

Science (American Association for the Advancement of Science), 2022-07, Vol.377 (6605), p.531-534

2022

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Recent Advances of 2D Materials in Nonlinear Photonics and Fiber Lasers

Advanced optical materials, 2020-04, Vol.8 (8), p.n/a

2020

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Thickness‐Dependent Carrier Transport Characteristics of a New 2D Elemental Semiconductor: Black Arsenic

Advanced functional materials, 2018-10, Vol.28 (43), p.n/a

2018

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Machine learning in materials science

InfoMat, 2019-09, Vol.1 (3), p.338-358

2019

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Polarimetric Image Sensor and Fermi Level Shifting Induced Multichannel Transition Based on 2D PdPS

Advanced materials (Weinheim), 2022-01, Vol.34 (2), p.e2107206-n/a

2022

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Doping Engineering in the MoS2/SnSe2 Heterostructure toward High‐Rejection‐Ratio Solar‐Blind UV Photodetection

Advanced materials (Weinheim), 2022-10, Vol.34 (43), p.e2206486-n/a

2022

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Tunable electronic and optical properties of InSe/InTe van der Waals heterostructures toward optoelectronic applications

Journal of materials chemistry. C, Materials for optical and electronic devices, 2018, Vol.6 (27), p.721-726

2018

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Symmetry‐Reduction Enhanced Polarization‐Sensitive Photodetection in Core–Shell SbI3/Sb2O3 van der Waals Heterostructure

Small (Weinheim an der Bergstrasse, Germany), 2020-02, Vol.16 (7), p.n/a

2020

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Mixed‐Valence‐Driven Quasi‐1D SnIISnIVS3 with Highly Polarization‐Sensitive UV–vis–NIR Photoresponse

Advanced functional materials, 2019-09, Vol.29 (38), p.n/a

2019

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Extrinsic Photoconduction Induced Short‐Wavelength Infrared Photodetectors Based on Ge‐Based Chalcogenides

Small (Weinheim an der Bergstrasse, Germany), 2021-01, Vol.17 (4), p.e2006765-n/a

2021

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Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides

Light, science & applications, 2021-03, Vol.10 (1), p.69-69, Article 69

2021

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Anti-Ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides

ACS applied materials & interfaces, 2016-06, Vol.8 (24), p.15574-15581

2016

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Large tunneling magnetoresistance in magnetic tunneling junctions based on two-dimensional CrX3 (X = Br, I) monolayers

Nanoscale, 2018-12, Vol.10 (47), p.22196-22202

2018

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Electrical and magnetic anisotropies in van der Waals multiferroic CuCrP2S6

Nature communications, 2023-02, Vol.14 (1), p.840-840, Article 840

2023

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Reviewing and understanding the stability mechanism of halide perovskite solar cells

InfoMat, 2020-11, Vol.2 (6), p.1034-1056

2020

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Exceptional Optoelectronic Properties of Hydrogenated Bilayer Silicene

Physical review. X, 2014-05, Vol.4 (2), p.021029, Article 021029

2014

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A systematic study of the negative thermal expansion in zinc-blende and diamond-like semiconductors

New journal of physics, 2019-12, Vol.21 (12), p.123015

2019

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Oxymatrine Inhibits Influenza A Virus Replication and Inflammation via TLR4, p38 MAPK and NF-κB Pathways

International journal of molecular sciences, 2018-03, Vol.19 (4), p.965

2018

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Nontrivial d-electrons driven superconductivity of transition metal diborides

New journal of physics, 2024-06, Vol.26 (6), p.63028

2024

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Wavelength dependent UV-Vis photodetectors from SnS2 flakes

RSC advances, 2016-01, Vol.6 (1), p.422-427

2016

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Electronic structure and exciton shifts in Sb-doped MoS2 monolayer

NPJ 2D materials and applications, 2019-01, Vol.3 (1), Article 1

2019

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Nitrogen-vacancy centers promote super-radiant maser performance

Science China materials, 2022-02, Vol.65 (2), p.558-558

2022

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Chemical trends of stability and band alignment of lattice-matched II-VI/III-V semiconductor interfaces

Physical review. B, Condensed matter and materials physics, 2015-02, Vol.91 (7), Article 075315

2015

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High-performance phosphorene electromechanical actuators

npj computational materials, 2020-03, Vol.6 (1), Article 27

2020

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Dual-Level Enhanced Nonradiative Carrier Recombination in Wide-Gap Semiconductors: The Case of Oxygen Vacancy in SiO2

Journal of the American Chemical Society, 2023-11, Vol.145 (45), p.24952-24957

2023

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Inactive (PbI2)2RbCl stabilizes perovskite films for efficient solar cells

Recent Advances of 2D Materials in Nonlinear Photonics and Fiber Lasers

Thickness‐Dependent Carrier Transport Characteristics of a New 2D Elemental Semiconductor: Black Arsenic

Machine learning in materials science

Polarimetric Image Sensor and Fermi Level Shifting Induced Multichannel Transition Based on 2D PdPS

Doping Engineering in the MoS2/SnSe2 Heterostructure toward High‐Rejection‐Ratio Solar‐Blind UV Photodetection

Tunable electronic and optical properties of InSe/InTe van der Waals heterostructures toward optoelectronic applications

Symmetry‐Reduction Enhanced Polarization‐Sensitive Photodetection in Core–Shell SbI3/Sb2O3 van der Waals Heterostructure

Mixed‐Valence‐Driven Quasi‐1D SnIISnIVS3 with Highly Polarization‐Sensitive UV–vis–NIR Photoresponse

Extrinsic Photoconduction Induced Short‐Wavelength Infrared Photodetectors Based on Ge‐Based Chalcogenides

Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides

Anti-Ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides

Large tunneling magnetoresistance in magnetic tunneling junctions based on two-dimensional CrX3 (X = Br, I) monolayers

Electrical and magnetic anisotropies in van der Waals multiferroic CuCrP2S6

Reviewing and understanding the stability mechanism of halide perovskite solar cells

Exceptional Optoelectronic Properties of Hydrogenated Bilayer Silicene

A systematic study of the negative thermal expansion in zinc-blende and diamond-like semiconductors

Oxymatrine Inhibits Influenza A Virus Replication and Inflammation via TLR4, p38 MAPK and NF-κB Pathways

Nontrivial d-electrons driven superconductivity of transition metal diborides

Wavelength dependent UV-Vis photodetectors from SnS2 flakes

Electronic structure and exciton shifts in Sb-doped MoS2 monolayer

Nitrogen-vacancy centers promote super-radiant maser performance

Chemical trends of stability and band alignment of lattice-matched II-VI/III-V semiconductor interfaces

High-performance phosphorene electromechanical actuators

Dual-Level Enhanced Nonradiative Carrier Recombination in Wide-Gap Semiconductors: The Case of Oxygen Vacancy in SiO2

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