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On the Variability in Planar FDSOI Technology: From MOSFETs to SRAM Cells
IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2326-2336
2011
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Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width
IEEE transactions on electron devices, 2013-02, Vol.60 (2), p.727-732
2013
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Multi-VT UTBB FDSOI Device Architectures for Low-Power CMOS Circuit
IEEE transactions on electron devices, 2011, Vol.58 (8), p.2473-2482
2011
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Multi- V T UTBB FDSOI Device Architectures for Low-Power CMOS Circuit
IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2473-2482
2011
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BSIM-IMG: A Compact Model for Ultrathin-Body SOI MOSFETs With Back-Gate Control
IEEE transactions on electron devices, 2012-08, Vol.59 (8), p.2019-2026
2012
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A New Method for Series Resistance Extraction of Nanometer MOSFETs
IEEE transactions on electron devices, 2017-07, Vol.64 (7), p.2797-2803
2017
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Low-Frequency Noise Sources in Advanced UTBB FD-SOI MOSFETs
IEEE transactions on electron devices, 2014-04, Vol.61 (4), p.1161-1167
2014
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A Model of Fringing Fields in Short-Channel Planar and Triple-Gate SOI MOSFETs
IEEE transactions on electron devices, 2007-06, Vol.54 (6), p.1366-1375
2007
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Analytical Modeling of Threshold Voltage and Interface Ideality Factor of Nanoscale Ultrathin Body and Buried Oxide SOI MOSFETs With Back Gate Control
IEEE transactions on electron devices, 2014-04, Vol.61 (4), p.969-975
2014
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High-Performance Ultrathin Body c-SiGe Channel FDSOI pMOSFETs Featuring SiGe Source and Drain: Vth Tuning, Variability, Access Resistance, and Mobility Issues
IEEE transactions on electron devices, 2013-05, Vol.60 (5), p.1568-1574
2013
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Multi-Channel Field-Effect Transistor (MCFET)-Part I: Electrical Performance and Current Gain Analysis
IEEE transactions on electron devices, 2009-06, Vol.56 (6), p.1243-1251
2009
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High-Performance Ultrathin Body c-SiGe Channel FDSOI pMOSFETs Featuring SiGe Source and Drain: V Tuning, Variability, Access Resistance, and Mobility Issues
IEEE transactions on electron devices, 2013-05, Vol.60 (5), p.1568-1574
2013
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Multi- V UTBB FDSOI Device Architectures for Low-Power CMOS Circuit
IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2473-2482
2011
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On the Variability in Planar FDSOI Technology: From MOSFETs to SRAM Cells : CHARACTERIZATION OF NANO CMOS VARIABIALITY BY SIMULATION AND MEASUREMENTS
IEEE transactions on electron devices, 2011, Vol.58 (8), p.2326-2336
2011
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Multi-[Formula Omitted] UTBB FDSOI Device Architectures for Low-Power CMOS Circuit
IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2473
2011
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Multi-Channel Field-Effect Transistor (MCFET)-Part II: Analysis of Gate Stack and Series Resistance Influence on the MCFET Performance
IEEE transactions on electron devices, 2009-06, Vol.56 (6), p.1252-1261
2009
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Multichannel Field-Effect Transistor (MCFET)—Part II: Analysis of Gate Stack and Series Resistance Influence on the MCFET Performance
IEEE transactions on electron devices, 2009
2009
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Generation-recombination transient effects in partially depleted SOI transistors: systematic experiments and simulations
IEEE transactions on electron devices, 1998-08, Vol.45 (8), p.1678-1683
1998
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A physically based relation between extracted threshold voltage and surface potential flat band voltage for MOSFET compact modeling
IEEE transactions on electron devices, 2001-05, Vol.48 (5), p.1019-1021
2001
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