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Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node

IEEE transactions on nuclear science, 2013-08, Vol.60 (4), p.2583-2589

2013

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IEEE_Xplore

High Temperature and Width Influence on the GIDL of Nanowire and Nanosheet SOI nMOSFETs

IEEE journal of the Electron Devices Society, 2023-01, Vol.11, p.1-1

2023

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On the Variability in Planar FDSOI Technology: From MOSFETs to SRAM Cells

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2326-2336

2011

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IEEE_Xplore

Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width

IEEE transactions on electron devices, 2013-02, Vol.60 (2), p.727-732

2013

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IEEE_Xplore

Carrier-Mobility Enhancement via Strain Engineering in Future Thin-Body MOSFETs

IEEE electron device letters, 2012-03, Vol.33 (3), p.318-320

2012

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IEEE_Xplore

Transient Radiation Response of Single- and Multiple-Gate FD SOI Transistors

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2355-2362

2007

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IEEE_Xplore

Multi-VT UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

IEEE transactions on electron devices, 2011, Vol.58 (8), p.2473-2482

2011

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Impact of back biasing on carrier transport in ultra-thin-body and BOX (UTBB) Fully Depleted SOI MOSFETs

2012 Symposium on VLSI Technology (VLSIT), 2012, p.113-114

2012

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IEEE_Xplore

Multi- V T UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2473-2482

2011

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Comprehensive Evaluation of Junctionless and Inversion-Mode Nanowire MOSFETs Performance at High Temperatures

IEEE journal of the Electron Devices Society, 2024-06, p.1-1

2024

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Experimental Demonstration of Capacitorless A2RAM Cells on Silicon-on-Insulator

IEEE electron device letters, 2012-12, Vol.33 (12), p.1717-1719

2012

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IEEE_Xplore

BSIM-IMG: A Compact Model for Ultrathin-Body SOI MOSFETs With Back-Gate Control

IEEE transactions on electron devices, 2012-08, Vol.59 (8), p.2019-2026

2012

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IEEE_Xplore

GeOI pMOSFETs Scaled Down to 30-nm Gate Length With Record Off-State Current

IEEE electron device letters, 2010-03, Vol.31 (3), p.234-236

2010

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IEEE_Xplore

Experimental Assessment of Variability in Junctionless Nanowire nMOS Transistors

ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), 2021, p.223-226

2021

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Analysis of the substrate bias effect on the interface trapped charges in junctionless nanowire transistors through low-frequency noise characterization

Microelectronic engineering, 2017-06, Vol.178, p.17-20

2017

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A New Method for Series Resistance Extraction of Nanometer MOSFETs

IEEE transactions on electron devices, 2017-07, Vol.64 (7), p.2797-2803

2017

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IEEE_Xplore

Low-Frequency Noise Sources in Advanced UTBB FD-SOI MOSFETs

IEEE transactions on electron devices, 2014-04, Vol.61 (4), p.1161-1167

2014

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IEEE_Xplore

A Model of Fringing Fields in Short-Channel Planar and Triple-Gate SOI MOSFETs

IEEE transactions on electron devices, 2007-06, Vol.54 (6), p.1366-1375

2007

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IEEE_Xplore

Arsenic-Segregated Rare-Earth Silicide Junctions: Reduction of Schottky Barrier and Integration in Metallic n-MOSFETs on SOI

IEEE electron device letters, 2009-12, Vol.30 (12), p.1266-1268

2009

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IEEE_Xplore

Analytical Modeling of Threshold Voltage and Interface Ideality Factor of Nanoscale Ultrathin Body and Buried Oxide SOI MOSFETs With Back Gate Control

IEEE transactions on electron devices, 2014-04, Vol.61 (4), p.969-975

2014

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IEEE_Xplore

Bias-Engineered Mobility in Advanced FD-SOI MOSFETs

IEEE electron device letters, 2013-07, Vol.34 (7), p.840-842

2013

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IEEE_Xplore

High-Performance Ultrathin Body c-SiGe Channel FDSOI pMOSFETs Featuring SiGe Source and Drain: Vth Tuning, Variability, Access Resistance, and Mobility Issues

IEEE transactions on electron devices, 2013-05, Vol.60 (5), p.1568-1574

2013

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Multibranch Mobility Analysis for the Characterization of FDSOI Transistors

IEEE electron device letters, 2012-08, Vol.33 (8), p.1102-1104

2012

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IEEE_Xplore

Benefits and challenges of FDSOI technology for 14nm node

IEEE 2011 International SOI Conference, 2011, p.1-21

Faynot, O.

2011

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IEEE_Xplore

New insight on the geometry dependence of BTI in 3D technologies based on experiments and modeling

2017 Symposium on VLSI Technology, 2017, p.T134-T135

2017

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Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node

High Temperature and Width Influence on the GIDL of Nanowire and Nanosheet SOI nMOSFETs

On the Variability in Planar FDSOI Technology: From MOSFETs to SRAM Cells

Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width

Carrier-Mobility Enhancement via Strain Engineering in Future Thin-Body MOSFETs

Transient Radiation Response of Single- and Multiple-Gate FD SOI Transistors

Multi-VT UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

Impact of back biasing on carrier transport in ultra-thin-body and BOX (UTBB) Fully Depleted SOI MOSFETs

Multi- V T UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

Comprehensive Evaluation of Junctionless and Inversion-Mode Nanowire MOSFETs Performance at High Temperatures

Experimental Demonstration of Capacitorless A2RAM Cells on Silicon-on-Insulator

BSIM-IMG: A Compact Model for Ultrathin-Body SOI MOSFETs With Back-Gate Control

GeOI pMOSFETs Scaled Down to 30-nm Gate Length With Record Off-State Current

Experimental Assessment of Variability in Junctionless Nanowire nMOS Transistors

Analysis of the substrate bias effect on the interface trapped charges in junctionless nanowire transistors through low-frequency noise characterization

A New Method for Series Resistance Extraction of Nanometer MOSFETs

Low-Frequency Noise Sources in Advanced UTBB FD-SOI MOSFETs

A Model of Fringing Fields in Short-Channel Planar and Triple-Gate SOI MOSFETs

Arsenic-Segregated Rare-Earth Silicide Junctions: Reduction of Schottky Barrier and Integration in Metallic n-MOSFETs on SOI

Analytical Modeling of Threshold Voltage and Interface Ideality Factor of Nanoscale Ultrathin Body and Buried Oxide SOI MOSFETs With Back Gate Control

Bias-Engineered Mobility in Advanced FD-SOI MOSFETs

High-Performance Ultrathin Body c-SiGe Channel FDSOI pMOSFETs Featuring SiGe Source and Drain: Vth Tuning, Variability, Access Resistance, and Mobility Issues

Multibranch Mobility Analysis for the Characterization of FDSOI Transistors

Benefits and challenges of FDSOI technology for 14nm node

New insight on the geometry dependence of BTI in 3D technologies based on experiments and modeling

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