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Enhanced production rates of hydrogen generation and carbon dioxide reduction using aluminum gallium nitride/gallium nitride heteroepitaxial films as photoelectrodes in seawater

Solar energy materials and solar cells, 2019-11, Vol.202, p.110153, Article 110153

2019

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Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

Journal of crystal growth, 2018-10, Vol.499, p.40-46

2018

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Micron thick Gd2O3 films for GaN/AlGaN metal–oxide–semiconductor heterostructures

Thin solid films, 2015-08, Vol.589, p.194-198

2015

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(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission

Nanomaterials (Basel, Switzerland), 2023-08, Vol.13 (17), p.2404

2023

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An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Materials, 2019-05, Vol.12 (10), p.1599

2019

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Ohmic contacts to Gallium Nitride materials

Applied surface science, 2016-10, Vol.383, p.324-345

2016

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Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Advanced materials (Weinheim), 2017-12, Vol.29 (47), p.n/a

2017

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Piezotronic Effect Modulated Heterojunction Electron Gas in AlGaN/AlN/GaN Heterostructure Microwire

Advanced materials (Weinheim), 2016-09, Vol.28 (33), p.7234-7242

2016

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Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Growth of AlxGa1-xN/InyGa1-yN hetero structure on AlN/sapphire templates exhibiting Shubnikov-de Haas oscillation

Journal of crystal growth, 2021-11, Vol.574, p.126324, Article 126324

2021

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Controlling Phase‐Coherent Electron Transport in III‐Nitrides: Toward Room Temperature Negative Differential Resistance in AlGaN/GaN Double Barrier Structures

Advanced functional materials, 2021-02, Vol.31 (8), p.n/a

2021

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Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale

Nanoscale, 2014-08, Vol.6 (15), p.8671-8680

2014

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Improvement of electrical properties by insertion of AlGaN interlayer for N-polar AlGaN/AlN structures on sapphire substrates

Japanese Journal of Applied Physics, 2023-11, Vol.62 (SN), p.SN1016

2023

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Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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A Novel Approach to Enhance Bone Regeneration by Controlling the Polarity of GaN/AlGaN Heterostructures

Advanced functional materials, 2021-01, Vol.31 (5), p.n/a

2021

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Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE

Journal of crystal growth, 2018-10, Vol.500, p.1-4

2018

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Systematic suppression of parasitic conductivity highlights undistorted quantum transport in GaN/AlGaN 2DEGs

Journal of crystal growth, 2022-07, Vol.589, p.126673, Article 126673

2022

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Growth and Fabrication of Quasivertical Current Aperture Vertical Electron Transistor Structures

Physica status solidi. A, Applications and materials science, 2021-02, Vol.218 (3), p.n/a

2021

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Strain effect on the performance of proton-irradiated GaN-based HEMT

Applied physics. A, Materials science & processing, 2023-05, Vol.129 (5), Article 374

2023

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Submicrometer‐Thick Step‐Graded AlGaN Buffer on Silicon with a High‐Buffer Breakdown Field

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Analysis of Mechanical Strain in AlGaN/GaN HFETs

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Electrophysical parameter comparison of 2DEG in AlGaN/GaN heterostructures grown by the NH3-MBE technique on sapphire and silicon substrates

Journal of crystal growth, 2022-06, Vol.588, p.126669, Article 126669

2022

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Influence of External Plane Stress on Electric Parameters of AlGaN/GaN HEMT Heterostructures

Physica status solidi. A, Applications and materials science, 2023-09, Vol.220 (18)

2023

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Multichannel AlGaN/GaN Schottky Barrier Diode with Low Turn‐On Voltage and On‐Resistance

Physica status solidi. A, Applications and materials science, 2022-07, Vol.219 (13), p.n/a

2022

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High‐Temperature Annealing of Si‐Doped AlGaN

Physica status solidi. A, Applications and materials science, 2024-04, Vol.221 (7)

2024

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Enhanced production rates of hydrogen generation and carbon dioxide reduction using aluminum gallium nitride/gallium nitride heteroepitaxial films as photoelectrodes in seawater

Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

Micron thick Gd2O3 films for GaN/AlGaN metal–oxide–semiconductor heterostructures

(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission

An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Ohmic contacts to Gallium Nitride materials

Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Piezotronic Effect Modulated Heterojunction Electron Gas in AlGaN/AlN/GaN Heterostructure Microwire

Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures

Growth of AlxGa1-xN/InyGa1-yN hetero structure on AlN/sapphire templates exhibiting Shubnikov-de Haas oscillation

Controlling Phase‐Coherent Electron Transport in III‐Nitrides: Toward Room Temperature Negative Differential Resistance in AlGaN/GaN Double Barrier Structures

Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale

Improvement of electrical properties by insertion of AlGaN interlayer for N-polar AlGaN/AlN structures on sapphire substrates

Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates

A Novel Approach to Enhance Bone Regeneration by Controlling the Polarity of GaN/AlGaN Heterostructures

Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE

Systematic suppression of parasitic conductivity highlights undistorted quantum transport in GaN/AlGaN 2DEGs

Growth and Fabrication of Quasivertical Current Aperture Vertical Electron Transistor Structures

Strain effect on the performance of proton-irradiated GaN-based HEMT

Submicrometer‐Thick Step‐Graded AlGaN Buffer on Silicon with a High‐Buffer Breakdown Field

Analysis of Mechanical Strain in AlGaN/GaN HFETs

Electrophysical parameter comparison of 2DEG in AlGaN/GaN heterostructures grown by the NH3-MBE technique on sapphire and silicon substrates

Influence of External Plane Stress on Electric Parameters of AlGaN/GaN HEMT Heterostructures

Multichannel AlGaN/GaN Schottky Barrier Diode with Low Turn‐On Voltage and On‐Resistance

High‐Temperature Annealing of Si‐Doped AlGaN

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