Details

Autor(en) / Beteiligte

• Liu, S
• Jung, D
• Norman, J. C
• Kennedy, M. J
• Gossard, A. C
• Bowers, J. E

Titel

490 fs pulse generation from passively mode-locked single section quantum dot laser directly grown on on-axis GaP/Si

Ist Teil von

• Electronics letters, 2018-04, Vol.54 (7), p.432-433

Ort / Verlag

The Institution of Engineering and Technology

Erscheinungsjahr

2018

Quelle

Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals

Beschreibungen/Notizen

• We demonstrate, for the first time, a single section passively mode-locked InAs/InGaAs quantum dot laser directly grown on on-axis (001) GaP/Si substrate. The laser has a continuous-wave threshold current of 34 mA at 20°C. By forward biasing the laser gain section current at 470 mA, 490 fs pulse generation with 31 GHz repetition rate can be obtained. This simple femtosecond pulse generation structure with CMOS fabrication compatibility makes the laser a promising light source candidate in future large-scale silicon photonic applications.