Electronics letters, 2017-11, Vol.53 (23), p.1541-1542
2017
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Details
- Autor(en) / Beteiligte
- Titel
- Adaptive delay control for synchronous rectification phase-shifted full bridge converter with GaN HEMT
- Ist Teil von
- Electronics letters, 2017-11, Vol.53 (23), p.1541-1542
- Ort / Verlag
- The Institution of Engineering and Technology
- Erscheinungsjahr
- 2017
- Quelle
- Access via Wiley Online Library
- Beschreibungen/Notizen
- An adaptive delay control method for a phase-shifted full bridge converter with a synchronous rectifier is presented. With this control, the delay time between primary and secondary switches can be optimised to reduce dead time, according to output power. Moreover, due to the poor third quadrant conduction of gallium nitride (GaN) high-electron-mobility transistors (HEMTs), the dead time needs to be optimised to utilise the benefits of a GaN HEMT. The experimental results with a 500 W prototype show that the efficiency can be improved by 0.7% with the proposed control.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0013-5194, 1350-911XeISSN: 1350-911XDOI: 10.1049/el.2017.3261Titel-ID: cdi_wiley_primary_10_1049_el_2017_3261_ELL2BF05253
- Format
- –
- Schlagworte
- adaptive control, adaptive delay control method, bridge circuits, dead time reduction, delay systems, gallium compounds, gallium nitride high‐electron‐mobility transistors, GaN, HEMT, HEMT circuits, III‐V semiconductors, phase shifters, power 500 W, power convertors, Power electronics, energy conversion and sustainability, rectifying circuits, secondary switches, synchronous rectification phase‐shifted full bridge converter, synchronous rectifier, wide band gap semiconductors