Details

Autor(en) / Beteiligte

• Liu, Pengfei
• Miao, Jun
• Liu, Qi
• Xu, Zedong
• Ren, Zengyao
• Meng, Kangkang
• Wu, Yong
• Chen, Jikun
• Xu, Xiaoguang
• Jiang, Yong

Titel

Tuning Effective Spin Hall Angles via Oxygen Vacancies in Multiferroic BiFeO3‐Based Heterostructures

Ist Teil von

• Advanced electronic materials, 2019-10, Vol.5 (10), p.n/a

Erscheinungsjahr

2019

Link zum Volltext

Quelle

Wiley Online Library Journals Frontfile Complete

Beschreibungen/Notizen

• Recently, magnetization switching driven by spin–orbit torque (SOT) has been intensely studied. However, it is still a challenge to effectively control the spin Hall angle (SHA) and critical current density for SOT switching. With the help of multiferroic BiFeO3 (BFO) thin films, a method to adjust SHA and the switching current is proposed. The BFO‐based heterostructures with opposite spontaneous polarization fields show huge changes in both perpendicular magnetic anisotropy and SOT‐induced magnetization switching. The variation of the effective SHAs for the heterostructures with opposite polarizations is estimated to be 272%, which can be attributed to the distribution of oxygen vacancies inside the BFO films. The possible applications of these structures in memory and reconfigurable logic devices are also demonstrated. Spin–orbit torque switching is realized in BiFeO3‐based heterostructures. The large changes of perpendicular magnetic anisotropy and effective spin Hall angle are observed with opposite polarization fields, which can be attributed to the distributions of oxygen vacancies inside the multiferroic BiFeO3 films.