Details

Autor(en) / Beteiligte

• Hader, Jörg
• Moloney, Jerome V
• Thränhardt, Angela
• Koch, Stephan W
• Piprek, Joachim

Titel

Interband Transitions in InGaN Quantum Wells

Ist Teil von

• Nitride Semiconductor Devices: Principles and Simulation, 2007, p.145-167

Ort / Verlag

Weinheim, Germany: Wiley‐VCH Verlag GmbH & Co. KGaA

Erscheinungsjahr

2007

Link zum Volltext

Quelle

Wiley-Blackwell Online Books - All Titles (includes Withdrawn titles)

Beschreibungen/Notizen

• This chapter contains sections titled: Introduction Theory Bandstructure and Wavefunctions Semiconductor Bloch Equations Semiconductor Luminescence Equations Auger Recombination Processes Theory–Experiment Gain Comparison Absorption/Gain General Trends Structural Dependence Spontaneous Emission Auger Recombination Internal Field Effects Summary References