Details

Autor(en) / Beteiligte

• He, Cheng-Ping
• Yu, Shun-Li
• Xiang, Tao
• Li, Jian-Xin

Titel

Effect of Impurity on the Doping-Induced in-Gap States in a Mott Insulator

Ist Teil von

• Chinese physics letters, 2022-05, Vol.39 (5), p.57401-145

Ort / Verlag

Chinese Physical Society and IOP Publishing Ltd

Erscheinungsjahr

2022

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Motivated by the recent measurements of the spatial distribution of single particle excitation states in a hole-doped Mott insulator, we study the effects of impurity on the in-gap states, induced by the doped holes, in the Hubbard model on the square lattice by the cluster perturbation theory. We find that a repulsive impurity potential can move the in-gap state from the lower Hubbard band towards the upper Hubbard band, providing a good account for the experimental observation. The distribution of the spectral function in the momentum space can be used to discriminate the in-gap state induced by doped holes and that by the impurity. The spatial characters of the in-gap states in the presence of two impurities are also discussed and compared to the experiment.